| Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition PP Paskov, R Schifano, B Monemar, T Paskova, S Figge, D Hommel Journal of Applied Physics 98 (9), 2005 | 251 | 2005 |
| Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels B Arnaudov, T Paskova, PP Paskov, B Magnusson, E Valcheva, ... Physical Review B 69 (11), 115216, 2004 | 234 | 2004 |
| Evidence for two Mg related acceptors in GaN BO Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ... Physical review letters 102 (23), 235501, 2009 | 154 | 2009 |
| Recombination of free and bound excitons in GaN B Monemar, PP Paskov, JP Bergman, AA Toropov, TV Shubina, ... physica status solidi (b) 245 (9), 1723-1740, 2008 | 145 | 2008 |
| Optical properties of InN—the bandgap question B Monemar, PP Paskov, A Kasic Superlattices and Microstructures 38 (1), 38-56, 2005 | 136 | 2005 |
| Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots PP Paskov, PO Holtz, B Monemar, JM Garcia, WV Schoenfeld, PM Petroff Applied Physics Letters 77 (6), 812-814, 2000 | 125 | 2000 |
| Anisotropic strain and phonon deformation potentials in GaN V Darakchieva, T Paskova, M Schubert, H Arwin, PP Paskov, B Monemar, ... Physical Review B—Condensed Matter and Materials Physics 75 (19), 195217, 2007 | 124 | 2007 |
| Refractive indices of InSb, InAs, GaSb, InAsSb, and InGaSb: Effects of free carriers PP Paskov Journal of applied physics 81 (4), 1890-1898, 1997 | 103 | 1997 |
| Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants M Slomski, N Blumenschein, PP Paskov, JF Muth, T Paskova Journal of Applied Physics 121 (23), 2017 | 97 | 2017 |
| Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates C Roder, S Einfeldt, S Figge, T Paskova, D Hommel, PP Paskov, ... Journal of applied physics 100 (10), 2006 | 89 | 2006 |
| Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers T Paskova, V Darakchieva, PP Paskov, J Birch, E Valcheva, POA Persson, ... Journal of crystal growth 281 (1), 55-61, 2005 | 81 | 2005 |
| Polarized photoluminescence study of free and bound excitons in free-standing PP Paskov, T Paskova, PO Holtz, B Monemar Physical Review B—Condensed Matter and Materials Physics 70 (3), 035210, 2004 | 63 | 2004 |
| Properties of the main Mg-related acceptors in GaN from optical and structural studies B Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ... Journal of Applied Physics 115 (5), 2014 | 60 | 2014 |
| Deformation potentials of the and modes of InN V Darakchieva, PP Paskov, E Valcheva, T Paskova, B Monemar, ... Applied physics letters 84 (18), 3636-3638, 2004 | 60 | 2004 |
| Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy V Darakchieva, PP Paskov, T Paskova, E Valcheva, B Monemar, ... Applied physics letters 82 (5), 703-705, 2003 | 53 | 2003 |
| Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures–theory and experiment PP Paskov, M Slomski, JH Leach, JF Muth, T Paskova AIP advances 7 (9), 2017 | 52 | 2017 |
| Phonon mode behavior in strained wurtzite superlattices V Darakchieva, E Valcheva, PP Paskov, M Schubert, T Paskova, ... Physical Review B—Condensed Matter and Materials Physics 71 (11), 115329, 2005 | 52 | 2005 |
| Transient photoluminescence of shallow donor bound excitons in GaN B Monemar, PP Paskov, JP Bergman, G Pozina, AA Toropov, TV Shubina, ... Physical Review B—Condensed Matter and Materials Physics 82 (23), 235202, 2010 | 51 | 2010 |
| Spin-exchange splitting of excitons in GaN PP Paskov, T Paskova, PO Holtz, B Monemar Physical Review B 64 (11), 115201, 2001 | 48 | 2001 |
| Recent developments in the III‐nitride materials B Monemar, PP Paskov, JP Bergman, AA Toropov, TV Shubina physica status solidi (b) 244 (6), 1759-1768, 2007 | 47 | 2007 |
Tania PaskovaECE Dept. NCSUVerified email at ncsu.edu
