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Sungmeen Myung
Sungmeen Myung
Staff Researcher, Samsung Advanced Institute of Technology (SAIT)
Подтвержден адрес электронной почты в домене samsung.com
Название
Процитировано
Процитировано
Год
A crossbar array of magnetoresistive memory devices for in-memory computing
S Jung, H Lee, S Myung, H Kim, SK Yoon, SW Kwon, Y Ju, M Kim, W Yi, ...
Nature 601 (7892), 211-216, 2022
3112022
PIMCA: A 3.4-Mb Programmable In-Memory Computing Accelerator in 28nm for On-Chip DNN Inference
S Yin, B Zhang, M Kim, J Saikia, S Kwon, S Myung, H Kim, SJ Kim, ...
2021 Symposium on VLSI Circuits, 1-2, 2021
342021
A 177 TOPS/W, capacitor-based in-memory computing SRAM macro with stepwise-charging/discharging DACs and sparsity-optimized bitcells for 4-bit deep convolutional neural networks
B Zhang, J Saikia, J Meng, D Wang, S Kwon, S Myung, H Kim, SJ Kim, ...
2022 IEEE Custom Integrated Circuits Conference (CICC), 1-2, 2022
292022
PIMCA: A programmable in-memory computing accelerator for energy-efficient DNN inference
B Zhang, S Yin, M Kim, J Saikia, S Kwon, S Myung, H Kim, SJ Kim, JS Seo, ...
IEEE Journal of Solid-State Circuits 58 (5), 1436-1449, 2022
192022
Time-Interleaved and Circuit-Shared Dual-Channel 10 b 200 MS/s 0.18 CMOS Analog-to-Digital Convertor
HJ Kim, TJ An, SM Myung, SH Lee
IEEE transactions on very large scale integration (VLSI) systems 21 (12 …, 2013
132013
MACC-SRAM: A Multistep Accumulation Capacitor-Coupling In-Memory Computing SRAM Macro for Deep Convolutional Neural Networks
B Zhang, J Saikia, J Meng, D Wang, S Kwon, S Myung, H Kim, SJ Kim, ...
IEEE Journal of Solid-State Circuits, 2023
12023
A circuit-shared double-channel low-power 10 b 170 MS/s 0.18/m CMOS ADC
SM Myung, YG Kwon, SP Nam, HJ Kim, SH Lee
Proc. ITC-CSCC, 279-282, 2011
12011
MULTI-BIT ACCUMULATOR AND IN-MEMORY COMPUTING PROCESSOR WITH SAME
S Myung, D CHANG, J Lee, D YOON, SJ Yun
US Patent App. US20240086153A1, 2024
2024
APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC)
SJ Yun, J Lee, S Jung, Soon-Wan KWON, S Myung, D YOON, D CHANG
US Patent App. US20240069867A1, 2024
2024
MEMORY AND METHOD WITH IN-MEMORY COMPUTING DEFECT DETECTION
S Myung, SJ Yun, J Lee, S Jung
US Patent App. US20240071548A1, 2024
2024
MEMORY DEVICE AND METHOD WITH IN-MEMORY COMPUTING
J Lee, SJ Yun, D CHANG, S Myung, D YOON
US Patent App. US20240028298A1, 2024
2024
COMPUTING DEVICE FOR PERFORMING DIGITAL PULSE-BASED CROSSBAR OPERATION AND METHOD OF OPERATING THE COMPUTING DEVICE
S Jung, SJ Kim, S Myung, SJ Yun, S YOON
US Patent App. US20230155578A1, 2023
2023
COMPUTING DEVICE AND METHOD USING MULTIPLIER-ACCUMULATOR
J Lee, SJ Kim, S Jung, S Myung
US Patent App. US20230075348A1, 2023
2023
APPARATUS AND METHOD WITH MULTIPLY-ACCUMULATE OPERATION
H Lee, S Jung, S Kim, S Myung
US Patent App. 20,220/365,752, 2022
2022
DEVICE AND METHOD WITH MULTIDIMENSIONAL VECTOR NEURAL NETWORK
H Kim, S Myung
US Patent App. US20220358345A1, 2022
2022
DEVICE AND METHOD WITH MULTI-BIT OPERATION
S Myung, S Jung, S Kim
US Patent App. US20220326910A1, 2022
2022
NEURAL NETWORK APPARATUS
S Jung, H Lee, S Myung, Y Ju
US Patent App. US20220114427A1, 2022
2022
PROCESSING DEVICE AND ELECTRONIC DEVICE HAVING THE SAME
S Jung, S Kim, S Myung
US Patent App. US20220019885A1, 2022
2022
PROCESSING DEVICE AND ELECTRONIC DEVICE HAVING THE SAME
S Jung, S Km, S Myung
US Patent App. US20220019884A1, 2022
2022
METHOD AND APPARATUS PERFORMING OPERATIONS USING CIRCUITS
S Jung, S Myung, S Kim
US Patent US11816447B2, 2021
2021
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