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Josef Gerhard Müller
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The hydrogen content of a-Ge: H and a-Si: H as determined by IR spectroscopy, gas evolution and nuclear reaction techniques
CJ Fang, KJ Gruntz, L Ley, M Cardona, FJ Demond, G Müller, S Kalbitzer
Journal of Non-Crystalline Solids 35, 255-260, 1980
935*1980
Gas-kinetic interactions of nitrous oxides with SnO2 surfaces
B Ruhland, T Becker, G Müller
Sensors and Actuators B: Chemical 50 (1), 85-94, 1998
3271998
Hydrogen response mechanism of Pt–GaN Schottky diodes
J Schalwig, G Müller, U Karrer, M Eickhoff, O Ambacher, M Stutzmann, ...
Applied Physics Letters 80 (7), 1222-1224, 2002
2762002
Gas sensitive GaN/AlGaN-heterostructures
J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann
Sensors and Actuators B: Chemical 87 (3), 425-430, 2002
2712002
GaN-based heterostructures for sensor applications
M Stutzmann, G Steinhoff, M Eickhoff, O Ambacher, CE Nebel, J Schalwig, ...
Diamond and related materials 11 (3-6), 886-891, 2002
2412002
A rate equation approach to the gas sensitivity of thin film metal oxide materials
S Ahlers, G Müller, T Doll
Sensors and Actuators B: Chemical 107 (2), 587-599, 2005
2042005
Gas sensing properties of thin-and thick-film tin-oxide materials
T Becker, S Ahlers, CB Braunmühl, G Müller, O Kiesewetter
Sensors and Actuators B: Chemical 77 (1-2), 55-61, 2001
1982001
Group‐III‐nitride based gas sensing devices
J Schalwig, G Müller, O Ambacher, M Stutzmann
physica status solidi (a) 185 (1), 39-45, 2001
1982001
High‐electron‐mobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications
R Neuberger, G Müller, O Ambacher, M Stutzmann
physica status solidi (a) 185 (1), 85-89, 2001
1702001
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures–Part B: Sensor applications
M Eickhoff, J Schalwig, G Steinhoff, O Weidemann, L Görgens, ...
physica status solidi (c), 1908-1918, 2003
1692003
Air pollution monitoring using tin-oxide-based microreactor systems
T Becker, ST Mühlberger, CB Braunmühl, G Müller, T Ziemann, ...
Sensors and Actuators B: Chemical 69 (1-2), 108-119, 2000
1522000
Silicon hotplates for metal oxide gas sensor elements
G Sberveglieri, W Hellmich, G Müller
Microsystem Technologies 3, 183-190, 1997
1351997
Group III-nitride-based gas sensors for combustion monitoring
J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann
Materials Science and Engineering: B 93 (1-3), 207-214, 2002
1312002
Optical pressure sensor based on a Mach-Zehnder interferometer integrated with a lateral a-Si: H pin photodiode
C Wagner, J Frankenberger, PP Deimel
IEEE photonics technology letters 5 (10), 1257-1259, 1993
129*1993
SiC for sensors and high-temperature electronics
G Müller, G Krötz, E Niemann
Sensors and Actuators A: Physical 43 (1-3), 259-268, 1994
1211994
A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon
G Müller, S Kalbitzer, H Mannsperger
Applied Physics A 39 (4), 243-250, 1986
1091986
High-temperature MEMS heater platforms: Long-term performance of metal and semiconductor heater materials
J Spannhake, O Schulz, A Helwig, A Krenkow, G Müller, T Doll
Sensors 6 (4), 405-419, 2006
1072006
Response mechanism of SiC-based MOS field-effect gas sensors
J Schalwig, P Kreisl, S Ahlers, G Muller
IEEE Sensors Journal 2 (5), 394-402, 2002
1062002
The effects of ion implantation on the electrical properties of amorphous silicon
S Kalbitzer, G Müller, PG Le Comber, WE Spear
Philosophical Magazine B 41 (4), 439-456, 1980
1051980
Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon
PA Stolk, FW Saris, AJM Berntsen, WF Weg, LT Sealy, RC Barklie, G Krötz, ...
Journal of Applied Physics 75 (11), 7266-7286, 1994
991994
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Articles 1–20