30GHz direct modulation bandwidth indetuned loaded InGaAsP DBR lasers at1. 55 μm wavelength O Kjebon, R Schatz, S Lourdudoss, S Nilsson, B Stålnacke, L Bäckbom
Electronics Letters 33, 488-489, 1997
171 1997 Heteroepitaxy and selective area heteroepitaxy for silicon photonics S Lourdudoss
Current Opinion in Solid State and Materials Science 16 (2), 91-99, 2012
100 2012 Hydride vapor phase epitaxy revisited S Lourdudoss, O Kjebon
IEEE Journal of Selected Topics in Quantum Electronics 3 (3), 749-767, 1997
98 1997 Monolithically integrated InP-based photonic chip development for O-CDMA systems C Ji, RG Broeke, Y Du, J Cao, N Chubun, P Bjeletich, F Olsson, ...
IEEE Journal of Selected Topics in Quantum Electronics 11 (1), 66-77, 2005
82 2005 Free‐space communications enabled by quantum cascade lasers X Pang, O Ozolins, L Zhang, R Schatz, A Udalcovs, X Yu, G Jacobsen, ...
physica status solidi (a) 218 (3), 2000407, 2021
77 2021 Gigabit free-space multi-level signal transmission with a mid-infrared quantum cascade laser operating at room temperature X Pang, O Ozolins, R Schatz, J Storck, A Udalcovs, JR Navarro, A Kakkar, ...
Optics letters 42 (18), 3646-3649, 2017
75 2017 Quantized conductance in a heterostructurally defined P Ramvall, N Carlsson, I Maximov, P Omling, L Samuelson, W Seifert, ...
Applied physics letters 71 (7), 918-920, 1997
75 1997 III–Vs on Si for photonic applications—A monolithic approach Z Wang, C Junesand, W Metaferia, C Hu, L Wosinski, S Lourdudoss
Materials Science and Engineering: B 177 (17), 1551-1557, 2012
71 2012 Bridging the terahertz gap: Photonics-assisted free-space communications from the submillimeter-wave to the mid-infrared X Pang, O Ozolins, S Jia, L Zhang, R Schatz, A Udalcovs, V Bobrovs, ...
Journal of Lightwave Technology 40 (10), 3149-3162, 2022
65 2022 Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs O Kjebon, R Schatz, S Lourdudoss, S Nilsson, B Stalnacke
High-Speed Semiconductor Laser Sources 2684, 138-152, 1996
60 1996 Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer F Olsson, M Xie, S Lourdudoss, I Prieto, PA Postigo
Journal of Applied Physics 104 (9), 2008
59 2008 Active photonic device C Junesand, S Lourdudoss
US Patent 8,290,014, 2012
58 2012 Monolithic InP 100-Channel FM Soares, NK Fontaine, RP Scott, JH Baek, X Zhou, T Su, S Cheung, ...
IEEE Photonics Journal 3 (6), 975-985, 2011
56 2011 Electron and hole capture cross-sections of Fe acceptors in GaN: Fe epitaxially grown on sapphire T Aggerstam, A Pinos, S Marcinkevičius, M Linnarsson, S Lourdudoss
Journal of electronic materials 36, 1621-1624, 2007
52 2007 Anomalous I Lo, MH Gau, JK Tsai, YL Chen, ZJ Chang, WT Wang, JC Chiang, ...
Physical Review B—Condensed Matter and Materials Physics 75 (24), 245307, 2007
52 2007 An investigation on hydride VPE growth and properties of semi-insulating InP: Fe S Lourdudoss, B Hammarlund, O Kjebon
Journal of electronic materials 19, 981-987, 1990
48 1990 Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire T Aggerstam, S Lourdudoss, HH Radamson, M Sjödin, P Lorenzini, ...
Thin Solid Films 515 (2), 705-707, 2006
45 2006 Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers K Streubel, J Wallin, G Landgren, U Öhlander, S Lourdudoss, O Kjebon
Journal of crystal growth 143 (1-2), 7-14, 1994
42 1994 Simple epitaxial lateral overgrowth process as a strategy for photonic integration on silicon H Kataria, W Metaferia, C Junesand, C Zhang, N Julian, JE Bowers, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 380-386, 2013
41 2013 Large area photonic crystal quantum cascade laser with 5 W surface-emitting power Z Wang, Y Liang, B Meng, YT Sun, G Omanakuttan, E Gini, M Beck, ...
Optics Express 27 (16), 22708-22716, 2019
40 2019 