| Investigation of high-sensitivity piezoresistive pressure sensors at ultra-low differential pressures M Basov, DM Prigodskiy IEEE Sensors Journal 20 (14), 7646-7652, 2020 | 36 | 2020 |
| Development of high-sensitivity piezoresistive pressure sensors for− 0.5…+ 0.5 kPa M Basov, D Prigodskiy Journal of Micromechanics and Microengineering 30 (10), 105006, 2020 | 35 | 2020 |
| High-sensitivity MEMS pressure sensor utilizing bipolar junction transistor with temperature compensation M Basov Sensors and Actuators A: Physical 303, 111705, 2020 | 27 | 2020 |
| Ultra-high sensitivity MEMS pressure sensor utilizing bipolar junction transistor for pressures ranging from− 1 to 1 kPa M Basov IEEE Sensors Journal 21 (4), 4357-4364, 2020 | 26 | 2020 |
| Development of high-sensitivity pressure sensor with on-chip differential transistor amplifier M Basov Journal of Micromechanics and Microengineering 30 (6), 065001, 2020 | 23 | 2020 |
| Investigation of sensitive element for pressure sensor based on bipolar piezotransistor M Basov, D Prigodskiy Nano - i Mikrosistemnaya Tekhnika 19 (11), 2017 | 19* | 2017 |
| Modeling of sensitive element for pressure sensor based on bipolar piezotransistor M Basov, D Prigodskiy Sensors and Systems 215 (6), 17-24, 2017 | 19* | 2017 |
| Schottky diode temperature sensor for pressure sensor M Basov Sensors and Actuators A: Physical 331, 112930, 2021 | 18 | 2021 |
| Pressure sensor with novel electrical circuit utilizing bipolar junction transistor M Basov 2021 IEEE Sensors, 1-4, 2021 | 16 | 2021 |
| High sensitive, linear and thermostable pressure sensor utilizing bipolar junction transistor for 5 kPa M Basov Physica Scripta 96 (6), 065705, 2021 | 16 | 2021 |
| Research of Pressure Sensitive Elements with Increased Strenght D Prigodskiy, M Basov Nano Microsys 21 (6), 368-376, 2019 | 16 | 2019 |
| Research of MEMS pressure sensor stability with PDA-NFL circuit M Basov | | 2024 |
| Pressure Sensor Chip with New Electrical Circuit for 10 kPa Range M Basov arXiv preprint arXiv:2302.07101, 2023 | | 2023 |
| Pressure sensor with reduced power consumption and increased breakdown voltage temperature sensor M Basov RU Patent RU 204992 U1, 2021 | | 2021 |
| Pressure sensor with ultra-reduced power consumption temperature sensor M Basov RU Patent RU 202558 U1, 2021 | | 2021 |
| Pressure sensor with reduced power consumption temperature sensor M Basov RU Patent RU 2730890 C1, 2020 | | 2020 |
| Integrated highly sensitive element of a pressure transducer based on a vertical bipolar transistor M Basov, BI Khimushkin RU Patent RU 195159 U1, 2020 | | 2020 |
| Integrated sensor element of a pressure transducer based on a vertical bipolar transistor with thermal compensation M Basov, BI Khimushkin RU Patent RU 195160 U1, 2020 | | 2020 |
| Highly sensitive and temperature compensated chip based on a BJT with a horizontal p-n-p structure M Basov XIV Russian Conference of Semiconductor Physics, 2019 | | 2019 |
| Integrated high-sensitivity element based on bipolar transistor M Basov, BI Khimushkib RU Patent RU 187760 U1, 2019 | | 2019 |
