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J Ross Thomson
J Ross Thomson
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Подтвержден адрес электронной почты в домене google.com
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Процитировано
Процитировано
Год
Direct extraction of semiconductor device parameters using lateral optimization method
A Ortiz-Conde, Y Ma, J Thomson, E Santos, JJ Liou, FJG Sánchez, M Lei, ...
Solid-State Electronics 43 (4), 845-848, 1999
831999
Vertical replacement-gate junction field-effect transistor
S Chaudhry, PA Layman, JR McMacken, R Thomson, JQ Zhao
US Patent 7,033,877, 2006
742006
Electronic fingerprinting of semiconductor integrated circuits
PA Layman, S Chaudhry, JG Norman, JR Thomson
US Patent 6,738,294, 2004
692004
Development of robust interconnect model based on design of experiments and multiobjective optimization
Q Zhang, JJ Liou, J McMacken, J Thomson, P Layman
IEEE Transactions on Electron Devices 48 (9), 1885-1891, 2001
692001
Magnetic ordering in the three-dimensional frustrated Heisenberg model
JR Thomson, H Guo, DH Ryan, MJ Zuckermann, M Grant
Physical Review B 45 (6), 3129, 1992
601992
Bipolar junction transistor compatible with vertical replacement gate transistor
S Chaudhry, PA Layman, JR McMacken, R Thomson, JQ Zhao
US Patent 6,759,730, 2004
522004
Method for defining the initial state of static random access memory
PA Layman, S Chaudhry, JG Norman, JR Thomson
US Patent 6,906,962, 2005
462005
Vertical replacement-gate junction field-effect transistor
S Chaudhry, PA Layman, JR McMacken, R Thomson, JQ Zhao
US Patent 6,690,040, 2004
382004
Multiple operating voltage vertical replacement-gate (VRG) transistor
PA Layman, JR McMacken, JR Thomson, S Chaudhry, JQ Zhao
US Patent 6,686,604, 2004
372004
SPICE modeling and quick estimation of MOSFET mismatch based on BSIM3 model and parametric tests
Q Zhang, JJ Liou, JR McMacken, J Thomson, P Layman
IEEE Journal of Solid-State Circuits 36 (10), 1592-1595, 2001
372001
Multi-layer inductor formed in a semiconductor substrate
S Chaudhry, PA Layman, JR Thomson, M Laradji, MD Griglione
US Patent 6,639,298, 2003
342003
Coarsening of solid-liquid mixtures in a random acceleration field
JR Thomson, J Casademunt, F Drolet, J Vinals
Physics of Fluids 9 (5), 1336-1343, 1997
291997
Vertical replacement-gate silicon-on-insulator transistor
S Chaudhry, PA Layman, JR McMacken, JR Thomson, JQ Zhao
US Patent 7,259,048, 2007
262007
Experimental demonstration of a 1.2 kV trench clustered insulated gate bipolar transistor in non punch through technology
K Vershinin, M Sweet, L Ngwendson, J Thomson, P Waind, J Bruce, ...
2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006
222006
Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material
MD Griglione, PA Layman, M Laradji, JR Thomson, S Chaudhry
US Patent 7,132,297, 2006
212006
Apparatus and method for detecting alpha particles
PA Layman, S Chaudhry, JG Norman, JR Thomson
US Patent 6,828,561, 2004
212004
Vertical replacement-gate junction field-effect transistor
S Chaudhry, P Layman, J McMacken, R Thomson, J Zhao
US Patent App. 11/390,015, 2006
192006
Cavity flow induced by a fluctuating acceleration field
JR Thomson, J Casademunt, J Viñals
Physics of Fluids 7 (2), 292-301, 1995
191995
Simulations of quantum circuits with approximate noise using qsim and cirq
SV Isakov, D Kafri, O Martin, CV Heidweiller, W Mruczkiewicz, ...
arXiv preprint arXiv:2111.02396, 2021
182021
Multiple operating voltage vertical replacement-gate (VRG) transistor
PA Layman, JR McMacken, JR Thomson, S Chaudhry, JQ Zhao
US Patent 7,056,783, 2006
172006
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