Ab initio calculations and the effect of atomic substitution in the Raman spectra of As(Sb,Bi)2 S3 films O Kondrat, N Popovich, R Holomb, V Mitsa, O Petrachenkov, M Koós, ...
physica status solidi c 7 (3‐4), 893-896, 2010
25 2010 Auger analysis and simulation of electronic states for Ge33 As12 Se55 p‐ Si heterojunction TN Shchurova, ND Savchenko, AB Kondrat, II Opachko
Surface and Interface Analysis: An International Journal devoted to the …, 2006
20 2006 Synchrotron radiation photoelectron spectroscopy studies of self-organization in As40Se60 nanolayers stored under ambient conditions and after laser irradiation O Kondrat, N Popovich, R Holomb, V Mitsa, V Lyamayev, N Tsud, V Cháb, ...
Journal of non-crystalline solids 358 (21), 2910-2916, 2012
17 2012 Coherent Light Photo-modification, Mass Transport Effect, and Surface Relief Formation in Asx S100-x Nanolayers: Absorption Edge, XPS, and Raman … O Kondrat, R Holomb, A Csik, V Takáts, M Veres, V Mitsa
Nanoscale Research Letters 12, 1-10, 2017
15 2017 Laser induced changes of As50Se50 nanolayers studied by synchrotron radiation photoelectron spectroscopy O Kondrat, N Popovich, R Holomb, V Mitsa, V Lyamayev, N Tsud, V Cháb, ...
Thin solid films 520 (24), 7224-7229, 2012
14 2012 Local surface structure and structural properties of As–Se nanolayers studied by synchrotron radiation photoelectron spectroscopy and DFT calculations O Kondrat, R Holomb, N Popovich, V Mitsa, M Veres, A Csik, N Tsud, ...
Journal of Non-Crystalline Solids 410, 180-185, 2015
13 2015 Simulation of the surface bending of energy band for binary chalcogenide semiconductors TN Shchurova, ND Savchenko, AB Kondrat, KO Popovych, VM Rubish, ...
Photoelectronics, 104-107, 2008
12 2008 In situ investigations of laser and thermally modified As2 S3 nanolayers: Synchrotron radiation photoelectron spectroscopy and density functional theory calculations O Kondrat, R Holomb, N Popovich, V Mitsa, M Veres, A Csik, A Feher, ...
Journal of Applied Physics 118 (22), 225307, 2015
10 2015 Deposition technique and external factors effect on Ge33As12Se55-Si heterostructure mechanical properties ND Savchenko, TN Shchurova, ML Trunov, A Kondrat, V Onopko
Material Science and Material Properties for Infrared Optoelectronics 3182 …, 1997
9 1997 Synchrotron XPS studies of illuminated and annealed flash evaporated a-Ge2S3 films V Mitsa, R Holomb, O Kondrat, N Popovych, N Tsud, V Matolín, KC Prince, ...
Journal of non-crystalline solids 401, 258-262, 2014
8 2014 Structural investigation of As-Se chalcogenide thin films with different compositions: formation, characterization and peculiarities of volume and near-surface nanolayers. O Kondrat, R Holomb, V Mitsa, M Veres, N Tsud
Funct. Mater. 24 (4), 547-554, 2017
7 2017 Reversible structural changes of in situ prepared As 40 Se 60 nanolayers studied by XPS spectroscopy OB Kondrat, RM Holomb, A Csik, V Takats, M Veres, A Feher, T Duchon, ...
Applied Nanoscience 9 (5), 917-924, 2019
6 2019 Super-bandgap light stimulated reversible transformation and laser-driven mass transport at the surface of As2 S3 chalcogenide nanolayers studied in situ R Holomb, O Kondrat, V Mitsa, M Veres, A Czitrovszky, A Feher, N Tsud, ...
The Journal of Chemical Physics 149 (21), 214702, 2018
5 2018 Calculation of Elastic Constants for ND Savchenko, TN Shchurova, AB Kondrat, VM Mitsa
AIP Conference Proceedings 963 (2), 1363-1366, 2007
5 2007 Charge transfer phenomenon in Ge33As12Se55-X-Si structures with nanolayer X: Sb; Bi; In; Pb ND Savchenko, AB Kondrat, NI Dovgoshey, YI Bertsik
Functional Materials 6 (3), 432-435, 1999
5 1999 The influence electrode material on charge transition in structures Si–Ge33As33Se55 investigation NI Dovgoshey, OB Kondrat, ND Savchenko, J Sidor Yu
physics and chemistry of solid state 1 (1), 119-123, 2000
4 2000 Nanolayers on the boundary of silicon-amorphous film of Ge-As-Se Type NI Dovgoshey, ОВ Kondrat, RM Povch
Functional materials 6 (3), 437-442, 1999
4 1999 Bands splitting in heterojunctions chalcogenide film–crystalline semiconductor ND Savchenko, AB Kondrat, TN Shchurova, NI Dovgoshey
Proc. Ukr. Vac. Soc 8th Int. Symp. Thin Films in Electronics/eds. VG …, 1997
4 1997 Structural studies of flash evaporated a-Ge (2) S (3) thin films nanolayers by high resolution X-ray-and synchrotron radiation photoelectron spectroscopy S Petretskyi, R Holomb, V Mitsa, O Kondrat, N Popovych, G Lovas, V Loja
Видавництво УжНУ" Говерла", 2013
2 2013 Amorphous-crystalline heterojunctions for optoelectronic sensors: Electronic structure and properties ND Savchenko, AB Kondrat, TN Shchurova, II Opachko, VM Rubish
Сенсорна електроніка і мікросистемні технології 4 (4), 21-25, 2007
2 2007 
Міца Володимир (Mitsa V.)Uzhhorod National University (Ужгородський національний університет)Подтвержден адрес электронной почты в домене uzhnu.edu.ua
