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Robert Edmund Butera
Robert Edmund Butera
Laboratory for Physical Sciences
Подтвержден адрес электронной почты в домене umd.edu
Название
Процитировано
Процитировано
Год
Reaction of BCl3 with H-and Cl-terminated Si (1 0 0) as a pathway for selective, monolayer doping through wet chemistry
D Silva-Quinones, C He, RE Butera, GT Wang, AV Teplyakov
Applied surface science 533, 146907, 2020
292020
STM-induced desorption and lithographic patterning of Cl–Si (100)-(2× 1)
KJ Dwyer, M Dreyer, RE Butera
The Journal of Physical Chemistry A 123 (50), 10793-10803, 2019
272019
Atomic-precision advanced manufacturing for Si quantum computing
E Bussmann, RE Butera, JHG Owen, JN Randall, SM Rinaldi, ...
MRS Bulletin 46, 607-615, 2021
252021
Phonon-activated electron-stimulated desorption of halogens from
BR Trenhaile, VN Antonov, GJ Xu, A Agrawal, AW Signor, RE Butera, ...
Physical Review B 73 (12), 125318, 2006
222006
B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl3 on Si(100)
KJ Dwyer, S Baek, A Farzaneh, M Dreyer, JR Williams, RE Butera
ACS Applied Materials & Interfaces 13 (34), 41275-41286, 2021
192021
Atomic processes during Cl supersaturation etching of
CM Aldao, A Agrawal, RE Butera, JH Weaver
Physical Review B 79 (12), 125303, 2009
192009
AlCl3-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al
MS Radue, S Baek, A Farzaneh, KJ Dwyer, Q Campbell, AD Baczewski, ...
The Journal of Physical Chemistry C 125 (21), 11336-11347, 2021
162021
Cl Insertion on : Etching Under Conditions of Supersaturation
A Agrawal, RE Butera, JH Weaver
Physical review letters 98 (13), 136104, 2007
162007
Effect of Sn Doping on Surface States of Bi2Se3 Thin Films
GM Stephen, I Naumov, S Tyagi, OA Vail, JE DeMell, M Dreyer, RE Butera, ...
The Journal of Physical Chemistry C 124 (49), 27082-27088, 2020
132020
Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride
H Chi, Y Ou, TB Eldred, W Gao, S Kwon, J Murray, M Dreyer, RE Butera, ...
Nature Communications 14 (1), 3222, 2023
112023
Reaction of Hydrazine with Solution-and Vacuum-Prepared Selectively Terminated Si (100) Surfaces: Pathways to the Formation of Direct Si–N Bonds
D Silva-Quinones, C He, KJ Dwyer, RE Butera, GT Wang, AV Teplyakov
Langmuir 36 (43), 12866-12876, 2020
112020
The stability of Cl-, Br-, and I-passivated Si (100)-(2× 1) in ambient environments for atomically-precise pattern preservation
E Frederick, KJ Dwyer, GT Wang, S Misra, RE Butera
Journal of Physics: Condensed Matter 33 (44), 444001, 2021
92021
On local sensing of spin Hall effect in tungsten films by using STM-based measurements
T Xie, M Dreyer, D Bowen, D Hinkel, RE Butera, C Krafft, I Mayergoyz
IEEE Transactions on Nanotechnology 17 (5), 914-919, 2018
82018
Solution chemistry to control boron-containing monolayers on silicon: Reactions of boric acid and 4-fluorophenylboronic acid with H-and Cl-terminated Si (100)
D Silva-Quinones, RE Butera, GT Wang, AV Teplyakov
Langmuir 37 (23), 7194-7202, 2021
72021
Scanning tunneling Andreev microscopy of titanium nitride thin films
WT Liao, TP Kohler, KD Osborn, RE Butera, CJ Lobb, FC Wellstood, ...
Physical Review B 100 (21), 214505, 2019
72019
Heterogeneous nucleation of pits via step pinning during Si (100) homoepitaxy
EN Yitamben, RE Butera, BS Swartzentruber, RJ Simonson, S Misra, ...
New Journal of Physics 19 (11), 113023, 2017
62017
A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect
T Xie, M Dreyer, D Bowen, D Hinkel, RE Butera, C Krafft, I Mayergoyz
arXiv preprint arXiv:1706.07882, 2017
62017
Si epitaxy on Cl-Si (100)
A Farzaneh, RE Butera
Applied Surface Science 589, 152877, 2022
52022
Adsorbate-induced roughening of Si (100) by interactions at steps
RE Butera, DA Mirabella, CM Aldao, JH Weaver
Physical Review B 82 (4), 045309, 2010
52010
Reaction pathways of BCl for acceptor delta-doping of silicon
Q Campbell, KJ Dwyer, S Baek, AD Baczewski, RE Butera, S Misra
arXiv preprint arXiv:2201.11682, 2022
42022
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Статьи 1–20