Bowing parameter of the band-gap energy of WG Bi, CW Tu
Applied Physics Letters 70 (12), 1608-1610, 1997
504 1997 Chemical mapping of semiconductor interfaces at near-atomic resolution A Ourmazd, DW Taylor, J Cunningham, CW Tu
Physical review letters 62 (8), 933, 1989
385 1989 Ultrafast phase relaxation of excitons via exciton-exciton and exciton-electron collisions L Schultheis, J Kuhl, A Honold, CW Tu
Physical review letters 57 (13), 1635, 1986
384 1986 Collision broadening of two-dimensional excitons in a GaAs single quantum well A Honold, L Schultheis, J Kuhl, CW Tu
Physical Review B 40 (9), 6442, 1989
361 1989 Density of states and de haas—van alphen effect in two-dimensional electron systems JP Eisenstein, HL Stormer, V Narayanamurti, AY Cho, AC Gossard, ...
Physical review letters 55 (8), 875, 1985
354 1985 Optical dephasing of homogeneously broadened two-dimensional exciton transitions in GaAs quantum wells L Schultheis, A Honold, J Kuhl, K Köhler, CW Tu
Physical Review B 34 (12), 9027, 1986
323 1986 Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy IA Buyanova, WM Chen, G Pozina, JP Bergman, B Monemar, HP Xin, ...
Applied physics letters 75 (4), 501-503, 1999
322 1999 Nature of the fundamental band gap in alloys W Shan, W Walukiewicz, KM Yu, J Wu, JW Ager III, EE Haller, HP Xin, ...
Applied Physics Letters 76 (22), 3251-3253, 2000
318 2000 Donor neutralization in GaAs (Si) by atomic hydrogen J Chevallier, WC Dautremont‐Smith, CW Tu, SJ Pearton
Applied physics letters 47 (2), 108-110, 1985
284 1985 GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy HP Xin, CW Tu
Applied physics letters 72 (19), 2442-2444, 1998
277 1998 Lifetime enhancement of two-dimensional excitons by the quantum-confined Stark effect HJ Polland, L Schultheis, J Kuhl, EO Göbel, CW Tu
Physical review letters 55 (23), 2610, 1985
250 1985 Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs M Sopanen, HP Xin, CW Tu
Applied Physics Letters 76 (8), 994-996, 2000
226 2000 Photonic-wire laser JP Zhang, DY Chu, SL Wu, ST Ho, WG Bi, CW Tu, RC Tiberio
Physical review letters 75 (14), 2678, 1995
224 1995 Direct determination of electron effective mass in GaNAs/GaAs quantum wells PN Hai, WM Chen, IA Buyanova, HP Xin, CW Tu
Applied Physics Letters 77 (12), 1843-1845, 2000
214 2000 Direct measurement of resonant and nonresonant tunneling times in asymmetric coupled quantum wells DY Oberli, J Shah, TC Damen, CW Tu, TY Chang, DAB Miller, JE Henry, ...
Physical Review B 40 (5), 3028, 1989
214 1989 Hydrogenation of shallow‐donor levels in GaAs SJ Pearton, WC Dautremont‐Smith, J Chevallier, CW Tu, KD Cummings
Journal of applied physics 59 (8), 2821-2827, 1986
212 1986 Picosecond phase coherence and orientational relaxation of excitons in GaAs L Schultheis, J Kuhl, A Honold, CW Tu
Physical review letters 57 (14), 1797, 1986
206 1986 Effects of nitrogen on the band structure of alloys HP Xin, CW Tu, Y Zhang, A Mascarenhas
Applied Physics Letters 76 (10), 1267-1269, 2000
191 2000 Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs E Batke, D Heitmann, CW Tu
Physical Review B 34 (10), 6951, 1986
189 1986 Formation of an impurity band and its quantum confinement in heavily doped GaAs: N Y Zhang, A Mascarenhas, HP Xin, CW Tu
Physical Review B 61 (11), 7479, 2000
182 2000