Energy-efficient high-accuracy switching method for SAR ADCs E Rahimi, M Yavari Electronics Letters 50 (7), 499-501, 2014 | 72 | 2014 |
High-Efficiency SiGe-BiCMOS -Band Power Amplifiers Exploiting Current Clamping in the Common-Base Stage E Rahimi, J Zhao, F Svelto, A Mazzanti IEEE Journal of Solid-State Circuits 54 (8), 2175-2185, 2019 | 24 | 2019 |
2.6 A SiGe BiCMOS E-band power amplifier with 22% PAE at 18dBm OP1dB and 8.5% at 6dB back-off leveraging current clamping in a common-base stage J Zhao, E Rahimi, F Svelto, A Mazzanti 2017 IEEE International Solid-State Circuits Conference (ISSCC), 42-43, 2017 | 23 | 2017 |
Analog front end of 50-Gb/s SiGe BiCMOS opto-electrical receiver in 3-D-integrated silicon photonics technology F Bozorgi, M Bruccoleri, E Rahimi, M Repossi, F Svelto, A Mazzanti IEEE Journal of Solid-State Circuits 57 (1), 312-322, 2021 | 7 | 2021 |
-Band Class-B VCO in 22 nm FD-SOI With Inductive Source Degeneration of the Tail Current Source F Bozorgi, E Rahimi, M Cui, P Sen IEEE Microwave and Wireless Components Letters 32 (11), 1351-1354, 2022 | 6 | 2022 |
70–90-GHz self-tuned polyphase filter for wideband I/Q LO generation in a 55-nm BiCMOS transmitter F Piri, E Rahimi, M Bassi, F Svelto, A Mazzanti ESSCIRC 2019-IEEE 45th European Solid State Circuits Conference (ESSCIRC …, 2019 | 6 | 2019 |
A 22nm FD-SOI CMOS 2-way D-band Power Amplifier Achieving PAE of 7.7% at 9.6 dBm OP1dB and 3.1% at 6dB Back-off by Leveraging Adaptive Back-Gate Bias Technique E Rahimi, F Bozorgi, G Hueber 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 175-178, 2022 | 4 | 2022 |
BiCMOS-Integrated Circuits for Millimeter-Wave Wireless Backhaul Transmitters A Mazzanti, L Iotti, MM Pirbazari, F Piri, E Rahimi, F Svelto Analog Circuits for Machine Learning, Current/Voltage/Temperature Sensors …, 2022 | | 2022 |
Low phase noise K-band VCO and high efficiency E-band power amplifier for mobile network backhaul in SiGe BiCMOS A Mazzanti, E Rahimi, N Lacaita, J Zhao, M Bassi, F Svelto 2018 International Conference on IC Design & Technology (ICICDT), 89-92, 2018 | | 2018 |
A SiGe BiCMOS E-Band Power Amplifier with 22% PAE at 18dBm OP J Zhao, E Rahimi, F Svelto, A Mazzanti | | |