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Mohamed Helmi Hadj Alouane
Mohamed Helmi Hadj Alouane
Assistant Professor, Monastir University
Подтвержден адрес электронной почты в домене fsm.rnu.tn
Название
Процитировано
Процитировано
Год
Investigation of the InAs/GaAs quantum dots’ size: dependence on the strain reducing layer’s position
M Souaf, M Baira, O Nasr, MHH Alouane, H Maaref, L Sfaxi, B Ilahi
Materials 8 (8), 4699-4709, 2015
382015
Excitonic properties of wurtzite InP nanowires grown on silicon substrate
MHH Alouane, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ...
Nanotechnology 24 (3), 035704, 2012
362012
Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate
MHH Alouane, R Anufriev, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ...
Nanotechnology 22 (40), 405702, 2011
292011
Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates
N Chauvin, MH Hadj Alouane, R Anufriev, H Khmissi, K Naji, G Patriarche, ...
Applied Physics Letters 100 (1), 011906, 2012
272012
InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
H Khmissi, K Naji, MHH Alouane, N Chauvin, C Bru-Chevallier, B Ilahi, ...
Journal of Crystal Growth 344 (1), 45-50, 2012
252012
Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In) GaAs surrounding material
O Nasr, MHH Alouane, H Maaref, F Hassen, L Sfaxi, B Ilahi
Journal of Luminescence 148, 243-248, 2014
242014
Detecting spatially localized exciton in self-organized InAs/InGaAs quantum dot superlattices: a way to improve the photovoltaic efficiency
M Ezzedini, T Hidouri, MHH Alouane, A Sayari, E Shalaan, N Chauvin, ...
Nanoscale research letters 12 (1), 1-10, 2017
152017
Carrier dynamics of strain-engineered InAs quantum dots with (In) GaAs surrounding material
O Nasr, N Chauvin, MHH Alouane, H Maaref, C Bru-Chevallier, L Sfaxi, ...
Journal of Optics 19 (2), 025401, 2017
152017
Structural and Optical Characteristics of Highly UV-blue Luminescent ZnNiO Nanoparticles Prepared by Sol–Gel Method
AH Farha, AF Al Naim, J Mazher, O Nasr, MHH Alouane
Materials 13 (4), 879, 2020
122020
Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing
B Ilahi, O Nasr, B Paquette, MHH Alouane, N Chauvin, B Salem, L Sfaxi, ...
Journal of Alloys and Compounds 656, 132-137, 2016
122016
Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate
B Azeza, MH Hadj Alouane, B Ilahi, G Patriarche, L Sfaxi, A Fouzri, ...
Materials 8 (7), 4544-4552, 2015
122015
Application of optimised nanocarbon materials and biofertilisers as a potent superfertiliser: towards sustainable agriculture production
MHH Alouane, F Ahmed, NAH El Semary, MF Aldayel, FH Alhaweti, ...
SCIENCE OF ADVANCED MATERIALS 13 (5), 812-819, 2021
112021
Salinity Stress Mitigation Using Encapsulated Biofertilizers for Sustainable Agriculture
NAH El Semary, MHH Alouane, O Nasr, MF Aldayel, FH Alhaweti, ...
Sustainability 12 (21), 9218, 2020
102020
Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution
MHH Alouane, A Helali, D Morris, H Maaref, V Aimez, B Salem, M Gendry, ...
Journal of Luminescence 145, 595-599, 2014
72014
Postgrowth intermixing of strain engineered InAs/GaAs quantum dots
O Nasr, MHH Alouane, B Ilahi, B Salem, L Sfaxi, H Maaref
Journal of Alloys and Compounds 615, 683-686, 2014
62014
Optical investigation of InAs quantum dashes grown on InP (001) vicinal substrate
F Besahraoui, M Bouslama, F Saidi, L Bouzaiene, MHH Alouane, ...
Superlattices and Microstructures 65, 264-270, 2014
62014
Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing
MH Hadj Alouane, B Ilahi, H Maaref, B Salem, V Aimez, D Morris, ...
Journal of nanoscience and nanotechnology 11 (10), 9251-9255, 2011
62011
Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
MH Hadj Alouane, B Ilahi, H Maaref, B Salem, V Aimez, D Morris, A Turala, ...
Journal of Applied Physics 108 (2), 024317, 2010
62010
Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate
MHH Alouane, O Nasr, H Khmissi, B Ilahi, G Patriarche, MM Ahmad, ...
Journal of Luminescence 231, 117814, 2021
32021
InAs quantum dots on different Ga (In) As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic
MHH Alouane, B Ilahi, L Sfaxi, H Maaref
Journal of Nanoparticle Research 13 (11), 5809-5813, 2011
22011
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Статьи 1–20