| Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV JW Palmour, L Cheng, V Pala, EV Brunt, DJ Lichtenwalner, GY Wang, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 342 | 2014 |
| Silicon carbide power MOSFET model and parameter extraction sequence TR McNutt, AR Hefner, HA Mantooth, D Berning, SH Ryu IEEE Transactions on Power Electronics 22 (2), 353-363, 2007 | 325 | 2007 |
| A new degradation mechanism in high-voltage SiC power MOSFETs A Agarwal, H Fatima, S Haney, SH Ryu IEEE Electron Device Letters 28 (7), 587-589, 2007 | 308 | 2007 |
| Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same SH Ryu US Patent 6,979,863, 2005 | 259 | 2005 |
| 1800 V NPN bipolar junction transistors in 4H-SiC SH Ryu, AK Agarwal, R Singh, JW Palmour IEEE Electron Device Letters 22 (3), 124-126, 2001 | 235 | 2001 |
| 10-kV, 123-m/spl Omega//spl middot/cm2 4H-SiC power DMOSFETs SH Ryu, S Krishnaswami, M O'Loughlin, J Richmond, A Agarwal, ... IEEE Electron Device Letters 25 (8), 556-558, 2004 | 210 | 2004 |
| SiC power devices for microgrids Q Zhang, R Callanan, MK Das, SH Ryu, AK Agarwal, JW Palmour IEEE Transactions on Power Electronics 25 (12), 2889-2896, 2010 | 202 | 2010 |
| Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions K Vechalapu, S Bhattacharya, E Van Brunt, SH Ryu, D Grider, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 5 (1), 469-489, 2016 | 157 | 2016 |
| Recent progress in SiC DMOSFETs and JBS diodes at Cree RJ Callanan, A Agarwal, A Burk, M Das, B Hull, F Husna, A Powell, ... 2008 34th Annual Conference of IEEE Industrial Electronics, 2885-2890, 2008 | 132 | 2008 |
| 10 kv, 5a 4h-sic power dmosfet SH Ryu, S Krishnaswami, B Hull, J Richmond, A Agarwal, A Hefner 2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006 | 125 | 2006 |
| Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters A Kadavelugu, S Bhattacharya, SH Ryu, E Van Brunt, D Grider, A Agarwal, ... 2013 IEEE energy conversion congress and exposition, 2528-2535, 2013 | 123 | 2013 |
| Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors SH Ryu US Patent 7,221,010, 2007 | 122 | 2007 |
| High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors FH Ruddy, JG Seidel, H Chen, AR Dulloo, SH Ryu IEEE Transactions on Nuclear Science 53 (3), 1713-1718, 2006 | 122 | 2006 |
| Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field … SH Ryu, A Agarwal, MK Das, LA Lipkin, JW Palmour, R Singh US Patent 6,956,238, 2005 | 120 | 2005 |
| Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobility TL Biggerstaff, CL Reynolds, T Zheleva, A Lelis, D Habersat, S Haney, ... Applied Physics Letters 95 (3), 2009 | 116 | 2009 |
| 1000-V, 30-A 4H-SiC BJTs with high current gain S Krishnaswami, A Agarwal, SH Ryu, C Capell, J Richmond, J Palmour, ... IEEE Electron Device Letters 26 (3), 175-177, 2005 | 115 | 2005 |
| The fast neutron response of 4H silicon carbide semiconductor radiation detectors FH Ruddy, AR Dulloo, JG Seidel, MK Das, SH Ryu, AK Agarwal IEEE Transactions on Nuclear Science 53 (3), 1666-1670, 2006 | 105 | 2006 |
| Digital CMOS IC's in 6H-SiC operating on a 5-V power supply SH Ryu, KT Kornegay, JA Cooper, MR Melloch IEEE transactions on electron devices 45 (1), 45-53, 1998 | 105 | 1998 |
| Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs B Hull, S Allen, Q Zhang, D Gajewski, V Pala, J Richmond, S Ryu, ... 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 139-142, 2014 | 96 | 2014 |
| Ultra high voltage (> 12 kV), high performance 4H-SiC IGBTs SH Ryu, C Capell, C Jonas, L Cheng, M O'Loughlin, A Burk, A Agarwal, ... 2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012 | 96 | 2012 |
