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Motoaki Iwaya
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Improved efficiency of 255–280 nm AlGaN-based light-emitting diodes
C Pernot, M Kim, S Fukahori, T Inazu, T Fujita, Y Nagasawa, A Hirano, ...
Applied physics express 3 (6), 061004, 2010
3342010
Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells
K Ban, J Yamamoto, K Takeda, K Ide, M Iwaya, T Takeuchi, S Kamiyama, ...
Applied physics express 4 (5), 052101, 2011
3242011
Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature …
M Iwaya, T Takeuchi, S Yamaguchi, C Wetzel, H Amano, I Akasaki
Japanese Journal of Applied Physics 37 (3B), L316, 1998
2671998
Stress and defect control in GaN using low temperature interlayers
H Amano, M Iwaya, T Kashima, M Katsuragawa, I Akasaki, J Han, ...
Japanese journal of applied physics 37 (12B), L1540, 1998
2311998
350.9 nm UV laser diode grown on low-dislocation-density AlGaN
K Iida, T Kawashima, A Miyazaki, H Kasugai, S Mishima, A Honshio, ...
Japanese journal of applied physics 43 (4A), L499, 2004
2022004
Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions
Y Kuwano, M Kaga, T Morita, K Yamashita, K Yagi, M Iwaya, T Takeuchi, ...
Japanese Journal of Applied Physics 52 (8S), 08JK12, 2013
1562013
Solar-blind UV photodetectors based on GaN/AlGaN pin photodiodes
C Pernot, A Hirano, M Iwaya, T Detchprohm, H Amano, I Akasaki
Japanese Journal of Applied Physics 39 (5A), L387, 2000
1492000
High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio
M Imura, K Nakano, N Fujimoto, N Okada, K Balakrishnan, M Iwaya, ...
Japanese journal of applied physics 45 (11R), 8639, 2006
1422006
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes
C Pernot, S Fukahori, T Inazu, T Fujita, M Kim, Y Nagasawa, A Hirano, ...
physica status solidi (a) 208 (7), 1594-1596, 2011
1272011
High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN
M Iwaya, S Terao, T Sano, S Takanami, T Ukai, R Nakamura, ...
physica status solidi (a) 188 (1), 117-120, 2001
1232001
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
M Imura, K Nakano, G Narita, N Fujimoto, N Okada, K Balakrishnan, ...
Journal of crystal growth 298, 257-260, 2007
1222007
Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure
S Kamiyama, M Iwaya, N Hayashi, T Takeuchi, H Amano, I Akasaki, ...
Journal of crystal growth 223 (1-2), 83-91, 2001
1202001
Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0. 6Ga0. 4N/AlN/sapphire
K Sato, S Yasue, K Yamada, S Tanaka, T Omori, S Ishizuka, S Teramura, ...
Applied Physics Express 13 (3), 031004, 2020
1182020
Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy
M Imura, K Nakano, N Fujimoto, N Okada, K Balakrishnan, M Iwaya, ...
Japanese journal of applied physics 46 (4R), 1458, 2007
1162007
AlGaN-based deep ultraviolet light-emitting diodes fabricated on patterned sapphire substrates
M Kim, T Fujita, S Fukahori, T Inazu, C Pernot, Y Nagasawa, A Hirano, ...
Applied physics express 4 (9), 092102, 2011
1102011
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
S Kamiyama, T Maeda, Y Nakamura, M Iwaya, H Amano, I Akasaki, ...
Journal of applied physics 99 (9), 2006
1102006
Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer
H Amano, M Iwaya, N Hayashi, T Kashima, S Nitta, C Wetzel, I Akasaki
physica status solidi (b) 216 (1), 683-689, 1999
1071999
GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate
Y Kuwahara, T Fujii, T Sugiyama, D Iida, Y Isobe, Y Fujiyama, Y Morita, ...
Applied physics express 4 (2), 021001, 2011
1052011
Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors
K Ikeyama, Y Kozuka, K Matsui, S Yoshida, T Akagi, Y Akatsuka, N Koide, ...
Applied Physics Express 9 (10), 102101, 2016
1022016
Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
M Imura, K Nakano, T Kitano, N Fujimoto, G Narita, N Okada, ...
Applied physics letters 89 (22), 2006
972006
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