| Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization SP Svensson, D Donetsky, D Wang, H Hier, FJ Crowne, G Belenky Journal of Crystal Growth 334 (1), 103-107, 2011 | 170 | 2011 |
| Band gap of InAs 1− x Sb x with native lattice constant SP Svensson, WL Sarney, H Hier, Y Lin, D Wang, D Donetsky, ... Physical Review B 86 (24), 245205, 2012 | 105 | 2012 |
| Properties of unrelaxed InAs1− XSbX alloys grown on compositionally graded buffers G Belenky, D Donetsky, G Kipshidze, D Wang, L Shterengas, WL Sarney, ... Applied Physics Letters 99 (14), 141116, 2011 | 83 | 2011 |
| Molecular beam epitaxy control and photoluminescence properties of InAsBi SP Svensson, H Hier, WL Sarney, D Donetsky, D Wang, G Belenky Journal of Vacuum Science & Technology B 30 (2), 02B109, 2012 | 60 | 2012 |
| Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region D Wang, D Donetsky, G Kipshidze, Y Lin, L Shterengas, G Belenky, ... Applied Physics Letters 103 (5), 051120, 2013 | 50 | 2013 |
| Band edge optical transitions in dilute-nitride GaNSb D Wang, SP Svensson, L Shterengas, G Belenky, CS Kim, I Vurgaftman, ... Journal of Applied Physics 105 (1), 014904, 2009 | 46 | 2009 |
| Development of bulk InAsSb alloys and barrier heterostructures for long-wave infrared detectors Y Lin, D Donetsky, D Wang, D Westerfeld, G Kipshidze, L Shterengas, ... Journal of Electronic Materials 44 (10), 3360-3366, 2015 | 41 | 2015 |
| Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications G Belenky, D Wang, Y Lin, D Donetsky, G Kipshidze, L Shterengas, ... Applied Physics Letters 102 (11), 111108, 2013 | 41 | 2013 |
| Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-xSbx alloys G Belenky, G Kipshidze, D Donetsky, SP Svensson, WL Sarney, H Hier, ... SPIE Defense, Security, and Sensing, 80120W-80120W-10, 2011 | 41 | 2011 |
| Conduction-and Valence-Band Energies in Bulk InAs1− x Sb x and Type II InAs1− x Sb x/InAs Strained-Layer Superlattices Y Lin, D Wang, D Donetsky, L Shterengas, G Kipshidze, G Belenky, ... Journal of Electronic Materials, 1-9, 2013 | 34 | 2013 |
| Continuous wave operated 3.2 µm type-I quantum-well diode lasers with the quinary waveguide layer G Belenky, L Shterengas, D Wang, G Kipshidze, L Vorobjev Semiconductor Science and Technology 24 (11), 115013, 2009 | 29 | 2009 |
| Structural and luminescent properties of bulk InAsSb WL Sarney, SP Svensson, H Hier, G Kipshidze, D Donetsky, D Wang, ... Journal of Vacuum Science & Technology B 30 (2), 02B105, 2012 | 27 | 2012 |
| 3 µm diode lasers grown on (Al) GaInSb compositionally graded metamorphic buffer layers T Hosoda, D Wang, G Kipshidze, WL Sarney, L Shterengas, G Belenky Semiconductor Science and Technology 27 (5), 055011, 2012 | 25 | 2012 |
| Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors GB Y. Lin, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, L. E. Vorobjev Semiconductor Science and Technology 29, 112002, 2014 | 18 | 2014 |
| Carrier Lifetime Measurements in Long-Wave Infrared InAs/GaSb Superlattices Under Low Excitation Conditions D Wang, D Donetsky, S Jung, G Belenky Journal of electronic materials 41 (11), 3027-3030, 2012 | 17 | 2012 |
| Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices Y Lin, D Wang, D Donetsky, G Belenky, H Hier, WL Sarney, SP Svensson Journal of Electronic Materials 43 (9), 3184-3190, 2014 | 16 | 2014 |
| Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors D Wang, Y Lin, D Donetsky, L Shterengas, G Kipshidze, G Belenky, ... SPIE Defense, Security, and Sensing, 835312-835312-11, 2012 | 15* | 2012 |
| Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures SP Svensson, D Donetsky, D Wang, P Maloney, G Belenky SPIE Defense, Security, and Sensing, 76601V-76601V-6, 2010 | 15 | 2010 |
| 56 Gb/s PAM-4 directly modulated laser for 200G/400G data-center optical links PP Baveja, M Li, D Wang, C Hsieh, H Zhang, N Ma, Y Wang, J Lii, Y Liang, ... 2017 Optical Fiber Communications Conference and Exhibition (OFC), 1-3, 2017 | 13 | 2017 |
| AlInAsSb for M-LWIR detectors GB W.L Sarney, S.P. Svensson, D. Wang, D. Donetsky, G. Kipshidze, L ... Journal of Crystal Growth 425, 357-35, 2015 | 12* | 2015 |
