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physica status solidi (a) 211 (1), 27-33, 2014
231 2014 Anisotropy, phonon modes, and free charge carrier parameters in monoclinic M Schubert, R Korlacki, S Knight, T Hofmann, S Schöche, V Darakchieva, ...
Physical Review B 93 (12), 125209, 2016
191 2016 Electrical compensation by Ga vacancies in Ga2O3 thin films E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ...
Applied Physics Letters 106 (24), 2015
188 2015 MoSi2N4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic and optical properties A Bafekry, M Faraji, DM Hoat, M Shahrokhi, MM Fadlallah, F Shojaei, ...
Journal of Physics D: Applied Physics 54 (15), 155303, 2021
186 2021 Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ...
Journal of Crystal Growth 401, 665-669, 2014
171 2014 Homo-and heteroepitaxial growth of Sn-doped β-Ga 2 O 3 layers by MOVPE D Gogova, M Schmidbauer, A Kwasniewski
CrystEngComm 17 (35), 6744-6752, 2015
135 2015 Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001) R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ...
Applied physics express 8 (1), 011101, 2014
130 2014 Analysis of the formation conditions for large area epitaxial graphene on SiC substrates R Yakimova, C Virojanadara, D Gogova, M Syväjärvi, D Siche, K Larsson, ...
Materials Science Forum 645, 565-568, 2010
98 2010 Growth of thick GaN layers with hydride vapour phase epitaxy B Monemar, H Larsson, C Hemmingsson, IG Ivanov, D Gogova
Journal of crystal growth 281 (1), 17-31, 2005
93 2005 Tunable electronic and magnetic properties of MoSi2N4 monolayer via vacancy defects, atomic adsorption and atomic doping A Bafekry, M Faraji, MM Fadlallah, AB Khatibani, A Abdolahzadeh Ziabari, ...
Applied Surface Science 559, 149862, 2021
89 2021 Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, D Gogova, SA Tarelkin, ...
Journal of Applied Physics 123 (11), 2018
86 2018 Biphenylene monolayer as a two-dimensional nonbenzenoid carbon allotrope: a first-principles study A Bafekry, M Faraji, MM Fadlallah, HR Jappor, S Karbasizadeh, ...
Journal of Physics: Condensed Matter 34 (1), 015001, 2021
81 2021 First-principles investigation of nonmetal doped single-layer BiOBr as a potential photocatalyst with a low recombination rate MM Obeid, C Stampfl, A Bafekry, Z Guan, HR Jappor, CV Nguyen, ...
Physical Chemistry Chemical Physics 22 (27), 15354-15364, 2020
78 2020 Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers DA Zatsepin, DW Boukhvalov, AF Zatsepin, YA Kuznetsova, D Gogova, ...
Superlattices and Microstructures 120, 90-100, 2018
71 2018 Structural and optical properties of CVD thin tungsten oxide films D Gogova, K Gesheva, A Szekeres, M Sendova‐Vassileva
physica status solidi (a) 176 (2), 969-984, 1999
68 1999 Ion implantation in β-Ga2O3: Physics and technology A Nikolskaya, E Okulich, D Korolev, A Stepanov, D Nikolichev, ...
Journal of Vacuum Science & Technology A 39 (3), 2021
66 2021 Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template D Gogova, A Kasic, H Larsson, C Hemmingsson, B Monemar, F Tuomisto, ...
Journal of applied physics 96 (1), 799-806, 2004
66 2004 The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC J Eriksson, R Pearce, T Iakimov, C Virojanadara, D Gogova, M Andersson, ...
Applied Physics Letters 100 (24), 2012
63 2012 Effect of indium as a surfactant in (Ga1− xInx) 2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy M Baldini, M Albrecht, D Gogova, R Schewski, G Wagner
Semiconductor Science and Technology 30 (2), 024013, 2015
61 2015 Adsorption of habitat and industry-relevant molecules on the MoSi2N4 monolayer A Bafekry, M Faraji, MM Fadlallah, AA Ziabari, AB Khatibani, SAH Feghhi, ...
Applied Surface Science 564, 150326, 2021
59 2021 