| Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates Y Araki, M Yamaguchi, F Ishikawa Nanotechnology 24 (6), 065601, 2013 | 54 | 2013 |
| Dilute nitride nanowire lasers based on a GaAs/GaNAs core/shell structure S Chen, M Jansson, JE Stehr, Y Huang, F Ishikawa, WM Chen, ... Nano letters 17 (3), 1775-1781, 2017 | 52 | 2017 |
| Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires SL Chen, WM Chen, F Ishikawa, IA Buyanova Scientific reports 5 (1), 11653, 2015 | 52 | 2015 |
| Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance R Kudrawiec, G Sęk, J Misiewicz, F Ishikawa, A Trampert, KH Ploog Applied Physics Letters 94 (1), 2009 | 51 | 2009 |
| GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique PK Patil, E Luna, T Matsuda, K Yamada, K Kamiya, F Ishikawa, ... Nanotechnology 28 (10), 105702, 2017 | 49 | 2017 |
| Effects of growth interruption, As and Ga fluxes, and nitrogen plasma irradiation on the molecular beam epitaxial growth of GaAs/GaAsN core–shell nanowires on Si (111) N Ahn, Y Araki, M Kondow, M Yamaguchi, F Ishikawa Japanese Journal of Applied Physics 53 (6), 065001, 2014 | 37 | 2014 |
| Metamorphic gaas/gaasbi heterostructured nanowires F Ishikawa, Y Akamatsu, K Watanabe, F Uesugi, S Asahina, U Jahn, ... Nano Letters 15 (11), 7265-7272, 2015 | 34 | 2015 |
| Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires SL Chen, S Filippov, F Ishikawa, WM Chen, IA Buyanova Applied Physics Letters 105 (25), 2014 | 34 | 2014 |
| Near-infrared lasing at 1 μm from a dilute-nitride-based multishell nanowire S Chen, M Yukimune, R Fujiwara, F Ishikawa, WM Chen, IA Buyanova Nano Letters 19 (2), 885-890, 2019 | 31 | 2019 |
| Novel compound semiconductor nanowires: materials, devices, and applications F Ishikawa, I Buyanova CRC Press, 2017 | 31 | 2017 |
| Indium distribution at the interfaces of (Ga, In)(N, As)∕ GaAs quantum wells E Luna, F Ishikawa, PD Batista, A Trampert Applied Physics Letters 92 (14), 2008 | 29 | 2008 |
| Interface properties of (Ga, In)(N, As) and (Ga, In)(As, Sb) materials systems grown by molecular beam epitaxy E Luna, F Ishikawa, B Satpati, JB Rodriguez, E Tournié, A Trampert Journal of crystal growth 311 (7), 1739-1744, 2009 | 26 | 2009 |
| Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires S Filippov, M Jansson, JE Stehr, J Palisaitis, POÅ Persson, F Ishikawa, ... Nanoscale 8 (35), 15939-15947, 2016 | 25 | 2016 |
| Impact of N-induced potential fluctuations on the electron transport in Ga (As, N) F Ishikawa, G Mussler, KJ Friedland, H Kostial, K Hagenstein, L Däweritz, ... Applied Physics Letters 87 (26), 2005 | 23 | 2005 |
| Impact of carrier localization on the photoluminescence characteristics of (Ga, In)(N, As) and (Ga, In)(N, As, Sb) quantum wells F Ishikawa, Á Guzmán, O Brandt, A Trampert, KH Ploog Journal of Applied Physics 104 (11), 2008 | 22 | 2008 |
| Photoacoustic spectroscopy of absorption edge for GaAsBi/GaAs nanowires grown on Si substrate SJ Zelewski, J Kopaczek, WM Linhart, F Ishikawa, S Shimomura, ... Applied Physics Letters 109 (18), 2016 | 21 | 2016 |
| Molecular beam epitaxial growth window for high-quality (Ga, In)(N, As) quantum wells for long wavelength emission F Ishikawa, M Höricke, U Jahn, A Trampert, KH Ploog Applied physics letters 88 (19), 2006 | 20 | 2006 |
| GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2% M Yukimune, R Fujiwara, H Ikeda, K Yano, K Takada, M Jansson, ... Applied Physics Letters 113 (1), 2018 | 19 | 2018 |
| Critical parameters for the molecular beam epitaxial growth of 1.55 μm (Ga, In)(N, As) multiple quantum wells F Ishikawa, E Luna, A Trampert, KH Ploog Applied physics letters 89 (18), 2006 | 18 | 2006 |
| Selective synthesis of compound semiconductor/oxide composite nanowires H Hibi, M Yamaguchi, N Yamamoto, F Ishikawa Nano letters 14 (12), 7024-7030, 2014 | 17 | 2014 |
