Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates Y Araki, M Yamaguchi, F Ishikawa
Nanotechnology 24 (6), 065601, 2013
52 2013 Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires SL Chen, WM Chen, F Ishikawa, IA Buyanova
Scientific reports 5 (1), 11653, 2015
48 2015 Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance R Kudrawiec, G Sęk, J Misiewicz, F Ishikawa, A Trampert, KH Ploog
Applied Physics Letters 94 (1), 011907, 2009
48 2009 Dilute nitride nanowire lasers based on a GaAs/GaNAs core/shell structure S Chen, M Jansson, JE Stehr, Y Huang, F Ishikawa, WM Chen, ...
Nano letters 17 (3), 1775-1781, 2017
45 2017 GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique PK Patil, E Luna, T Matsuda, K Yamada, K Kamiya, F Ishikawa, ...
Nanotechnology 28 (10), 105702, 2017
39 2017 Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires SL Chen, S Filippov, F Ishikawa, WM Chen, IA Buyanova
Applied Physics Letters 105 (25), 253106, 2014
32 2014 Effects of growth interruption, As and Ga fluxes, and nitrogen plasma irradiation on the molecular beam epitaxial growth of GaAs/GaAsN core–shell nanowires on Si (111) N Ahn, Y Araki, M Kondow, M Yamaguchi, F Ishikawa
Japanese Journal of Applied Physics 53 (6), 065001, 2014
32 2014 Novel compound semiconductor nanowires: materials, devices, and applications F Ishikawa, I Buyanova
CRC Press, 2017
28 2017 Metamorphic gaas/gaasbi heterostructured nanowires F Ishikawa, Y Akamatsu, K Watanabe, F Uesugi, S Asahina, U Jahn, ...
Nano Letters 15 (11), 7265-7272, 2015
28 2015 Indium distribution at the interfaces of E Luna, F Ishikawa, PD Batista, A Trampert
Applied Physics Letters 92 (14), 141913, 2008
27 2008 Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires S Filippov, M Jansson, JE Stehr, J Palisaitis, POÅ Persson, F Ishikawa, ...
Nanoscale 8 (35), 15939-15947, 2016
26 2016 Interface properties of (Ga, In)(N, As) and (Ga, In)(As, Sb) materials systems grown by molecular beam epitaxy E Luna, F Ishikawa, B Satpati, JB Rodriguez, E Tournié, A Trampert
Journal of crystal growth 311 (7), 1739-1744, 2009
25 2009 Near-infrared lasing at 1 μm from a dilute-nitride-based multishell nanowire S Chen, M Yukimune, R Fujiwara, F Ishikawa, WM Chen, IA Buyanova
Nano Letters 19 (2), 885-890, 2019
22 2019 Impact of carrier localization on the photoluminescence characteristics of (Ga, In)(N, As) and (Ga, In)(N, As, Sb) quantum wells F Ishikawa, A Guzmán, O Brandt, A Trampert, KH Ploog
Journal of Applied Physics 104 (11), 113502, 2008
21 2008 Photoacoustic spectroscopy of absorption edge for GaAsBi/GaAs nanowires grown on Si substrate SJ Zelewski, J Kopaczek, WM Linhart, F Ishikawa, S Shimomura, ...
Applied Physics Letters 109 (18), 182106, 2016
20 2016 Molecular beam epitaxial growth window for high-quality (Ga, In)(N, As) quantum wells for long wavelength emission F Ishikawa, M Höricke, U Jahn, A Trampert, KH Ploog
Applied physics letters 88 (19), 191115, 2006
20 2006 Impact of N-induced potential fluctuations on the electron transport in Ga (As, N) F Ishikawa, G Mussler, KJ Friedland, H Kostial, K Hagenstein, L Däweritz, ...
Applied Physics Letters 87 (26), 262112, 2005
19 2005 Critical parameters for the molecular beam epitaxial growth of F Ishikawa, E Luna, A Trampert, KH Ploog
Applied physics letters 89 (18), 181910, 2006
18 2006 Ground and excited state transitions in as-grown R Kudrawiec, M Gladysiewicz, J Misiewicz, F Ishikawa, KH Ploog
Applied physics letters 90 (4), 041916, 2007
17 2007 GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2% M Yukimune, R Fujiwara, H Ikeda, K Yano, K Takada, M Jansson, ...
Applied Physics Letters 113 (1), 011901, 2018
15 2018 