Benchmarking of thermal boundary resistance in AlGaN/GaN HEMTs on SiC substrates: Implications of the nucleation layer microstructure A Manoi, JW Pomeroy, N Killat, M Kuball
IEEE electron device letters 31 (12), 1395-1397, 2010
210 2010 Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping JW Pomeroy, M Bernardoni, DC Dumka, DM Fanning, M Kuball
Applied Physics Letters 104 (8), 2014
185 2014 Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration C Yuan, J Li, L Lindsay, D Cherns, JW Pomeroy, S Liu, JH Edgar, ...
Communications physics 2 (1), 43, 2019
179 2019 Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications H Sun, RB Simon, JW Pomeroy, D Francis, F Faili, DJ Twitchen, M Kuball
Applied Physics Letters 106 (11), 2015
175 2015 Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy M Kuball, GJ Riedel, JW Pomeroy, A Sarua, MJ Uren, T Martin, KP Hilton, ...
IEEE electron device letters 28 (2), 86-89, 2007
167 2007 Channel temperature determination in high-power AlGaN/GaN HFETs using electrical methods and Raman spectroscopy RJT Simms, JW Pomeroy, MJ Uren, T Martin, M Kuball
IEEE Transactions on Electron Devices 55 (2), 478-482, 2008
148 2008 Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs S Rajasingam, JW Pomeroy, M Kuball, MJ Uren, T Martin, DC Herbert, ...
IEEE Electron Device Letters 25 (7), 456-458, 2004
121 2004 Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs Y Zhou, R Ramaneti, J Anaya, S Korneychuk, J Derluyn, H Sun, ...
Applied Physics Letters 111 (4), 2017
120 2017 A review of Raman thermography for electronic and opto-electronic device measurement with submicron spatial and nanosecond temporal resolution M Kuball, JW Pomeroy
IEEE Transactions on Device and Materials Reliability 16 (4), 667-684, 2016
119 2016 Barrier-layer optimization for enhanced GaN-on-diamond device cooling Y Zhou, J Anaya, J Pomeroy, H Sun, X Gu, A Xie, E Beam, M Becker, ...
ACS applied materials & interfaces 9 (39), 34416-34422, 2017
107 2017 Phonon lifetimes and phonon decay in InN JW Pomeroy, M Kuball, H Lu, WJ Schaff, X Wang, A Yoshikawa
Applied Physics Letters 86 (22), 2005
103 2005 Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ...
IEEE Electron Device Letters 30 (2), 103-106, 2008
98 2008 Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy T Batten, JW Pomeroy, MJ Uren, T Martin, M Kuball
Journal of Applied Physics 106 (9), 2009
85 2009 Electrical and thermal performance of AlGaN/GaN HEMTs on diamond substrate for RF applications DC Dumka, TM Chou, JL Jimenez, DM Fanning, D Francis, F Faili, ...
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2013
76 2013 Pulsed Large Signal RF Performance of Field-Plated Ga2 O3 MOSFETs M Singh, MA Casbon, MJ Uren, JW Pomeroy, S Dalcanale, S Karboyan, ...
IEEE Electron Device Letters 39 (10), 1572-1575, 2018
75 2018 Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing JW Pomeroy, MJ Uren, B Lambert, M Kuball
Microelectronics Reliability 55 (12), 2505-2510, 2015
75 2015 Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
IEEE Electron device letters 33 (3), 366-368, 2012
75 2012 Temperature-dependent thermal resistance of GaN-on-diamond HEMT wafers H Sun, JW Pomeroy, RB Simon, D Francis, F Faili, DJ Twitchen, M Kuball
IEEE Electron Device Letters 37 (5), 621-624, 2016
73 2016 Raman Thermography of Peak Channel Temperature in 2 O3 MOSFETs JW Pomeroy, C Middleton, M Singh, S Dalcanale, MJ Uren, MH Wong, ...
IEEE Electron Device Letters 40 (2), 189-192, 2018
67 2018 Contactless thermal boundary resistance measurement of GaN-on-diamond wafers JW Pomeroy, RB Simon, H Sun, D Francis, F Faili, DJ Twitchen, M Kuball
IEEE Electron Device Letters 35 (10), 1007-1009, 2014
66 2014 