Comparative study of hybrid functionals applied to structural and electronic properties of semiconductors and insulators Y Matsushita, K Nakamura, A Oshiyama
Physical Review B 84 (7), 075205, 2011
81 2011 Large magnetocrystalline anisotropy in tetragonally distorted Heuslers: a systematic study YI Matsushita, G Madjarova, JK Dewhurst, S Shallcross, C Felser, ...
Journal of Physics D: Applied Physics 50 (9), 095002, 2017
71 2017 Native point defects and carbon clusters in 4H-SiC: A hybrid functional study T Kobayashi, K Harada, Y Kumagai, F Oba, Y Matsushita
Journal of Applied Physics 125 (12), 2019
68 2019 Floating electron states in covalent semiconductors Y Matsushita, S Furuya, A Oshiyama
Physical Review Letters 108 (24), 246404, 2012
66 2012 Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation T Kobayashi, T Okuda, K Tachiki, K Ito, Y Matsushita, T Kimoto
Applied Physics Express 13 (9), 091003, 2020
52 2020 Structure and energetics of carbon defects in SiC (0001)/SiO2 systems at realistic temperatures: Defects in SiC, SiO2, and at their interface T Kobayashi, Y Matsushita
Journal of Applied Physics 126 (14), 2019
50 2019 Band-unfolding approach to moiré-induced band-gap opening and Fermi level velocity reduction in twisted bilayer graphene H Nishi, Y Matsushita, A Oshiyama
Physical Review B 95 (8), 085420, 2017
46 2017 Implementation of quantum imaginary-time evolution method on NISQ devices by introducing nonlocal approximation H Nishi, T Kosugi, Y Matsushita
npj Quantum Information 7 (1), 85, 2021
44 2021 Construction of Green's functions on a quantum computer: Quasiparticle spectra of molecules T Kosugi, Y Matsushita
Physical Review A 101 (1), 012330, 2020
41 2020 Energetics and electronic structure of native point defects in α-Ga2O3 T Kobayashi, T Gake, Y Kumagai, F Oba, Y Matsushita
Applied Physics Express 12 (9), 091001, 2019
41 2019 A Novel Intrinsic Interface State Controlled by Atomic Stacking Sequence at Interfaces of SiC/SiO2 Y Matsushita, A Oshiyama
Nano letters 17 (10), 6458-6463, 2017
38 2017 Interstitial channels that control band gaps and effective masses in tetrahedrally bonded semiconductors Y Matsushita, A Oshiyama
Physical Review Letters 112 (13), 136403, 2014
35 2014 Imaginary-time evolution using forward and backward real-time evolution with a single ancilla: First-quantized eigensolver algorithm for quantum chemistry T Kosugi, Y Nishiya, H Nishi, Y Matsushita
Physical Review Research 4 (3), 033121, 2022
34 2022 Carbon dangling-bond center (carbon Pb center) at 4H-SiC (0001)/SiO2 interface T Umeda, T Kobayashi, M Sometani, H Yano, Y Matsushita, S Harada
Applied physics letters 116 (7), 2020
26 2020 Band structures in coupled-cluster singles-and-doubles Green’s function (GFCCSD) Y Furukawa, T Kosugi, H Nishi, Y Matsushita
The Journal of Chemical Physics 148 (20), 2018
26 2018 Momentum microscopy of the layered semiconductor TiS2 and Ni intercalated Ni1/3TiS2 S Suga, C Tusche, Y Matsushita, M Ellguth, A Irizawa, J Kirschner
New Journal of Physics 17 (8), 083010, 2015
26 2015 Linear-response functions of molecules on a quantum computer: Charge and spin responses and optical absorption T Kosugi, Y Matsushita
Physical Review Research 2 (3), 033043, 2020
25 2020 Structural stability and energy levels of carbon-related defects in amorphous SiO2 and its interface with SiC Y Matsushita, A Oshiyama
Japanese Journal of Applied Physics 57 (12), 125701, 2018
22 2018 Comparison of Green’s functions for transition metal atoms using self-energy functional theory and coupled-cluster singles and doubles (CCSD) T Kosugi, H Nishi, Y Furukawa, Y Matsushita
The Journal of chemical physics 148 (22), 2018
18 2018 Unfolding energy spectra of double-periodicity two-dimensional systems: Twisted bilayer graphene and on graphene Y Matsushita, H Nishi, J Iwata, T Kosugi, A Oshiyama
Physical Review Materials 2 (1), 010801, 2018
18 2018