| Scaling carbon nanotube complementary transistors to 5-nm gate lengths C Qiu, Z Zhang, M Xiao, Y Yang, D Zhong, LM Peng Science 355 (6322), 271-276, 2017 | 625 | 2017 |
| Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches C Qiu, F Liu, L Xu, B Deng, M Xiao, J Si, L Lin, Z Zhang, J Wang, H Guo, ... Science 361 (6400), 387-392, 2018 | 266 | 2018 |
| A native oxide high-κ gate dielectric for two-dimensional electronics T Li, T Tu, Y Sun, H Fu, J Yu, L Xing, Z Wang, H Wang, R Jia, J Wu, C Tan, ... Nature Electronics 3 (8), 473-478, 2020 | 169 | 2020 |
| Gigahertz integrated circuits based on carbon nanotube films D Zhong, Z Zhang, L Ding, J Han, M Xiao, J Si, L Xu, C Qiu, LM Peng Nature Electronics 1 (1), 40-45, 2018 | 147 | 2018 |
| Carbon nanotube digital electronics LM Peng, Z Zhang, C Qiu Nature Electronics 2 (11), 499-505, 2019 | 127 | 2019 |
| Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se J Wu, C Qiu, H Fu, S Chen, C Zhang, Z Dou, C Tan, T Tu, T Li, Y Zhang, ... Nano Letters 19 (1), 197-202, 2018 | 104 | 2018 |
| Comparison of mobility extraction methods based on field-effect measurements for graphene H Zhong, Z Zhang, H Xu, C Qiu, LM Peng Aip Advances 5 (5), 2015 | 103 | 2015 |
| Carbon nanotube feedback-gate field-effect transistor: Suppressing current leakage and increasing on/off ratio C Qiu, Z Zhang, D Zhong, J Si, Y Yang, LM Peng Acs Nano 9 (1), 969-977, 2015 | 87 | 2015 |
| Ballistic two-dimensional InSe transistors J Jiang, L Xu, C Qiu, LM Peng Nature 616 (7957), 470-475, 2023 | 82 | 2023 |
| Dirac electrons at the source: Breaking the 60-mV/decade switching limit F Liu, C Qiu, Z Zhang, LM Peng, J Wang, H Guo IEEE Transactions on Electron Devices 65 (7), 2736-2743, 2018 | 72 | 2018 |
| Carbon nanotube complementary gigahertz integrated circuits and their applications on wireless sensor interface systems L Liu, L Ding, D Zhong, J Han, S Wang, Q Meng, C Qiu, X Zhang, ... ACS nano 13 (2), 2526-2535, 2019 | 64 | 2019 |
| Host–guest molecular interaction enabled separation of large-diameter semiconducting single-walled carbon nanotubes X Yang, T Liu, R Li, X Yang, M Lyu, L Fang, L Zhang, K Wang, A Zhu, ... Journal of the American Chemical Society 143 (27), 10120-10130, 2021 | 47 | 2021 |
| Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene M Xiao, C Qiu, Z Zhang, LM Peng ACS applied materials & interfaces 9 (39), 34050-34056, 2017 | 46 | 2017 |
| Can carbon nanotube transistors be scaled down to the sub-5 nm gate length? L Xu, J Yang, C Qiu, S Liu, W Zhou, Q Li, B Shi, J Ma, C Yang, J Lu, ... ACS Applied Materials & Interfaces 13 (27), 31957-31967, 2021 | 41 | 2021 |
| Modularized construction of general integrated circuits on individual carbon nanotubes T Pei, P Zhang, Z Zhang, C Qiu, S Liang, Y Yang, S Wang, LM Peng Nano letters 14 (6), 3102-3109, 2014 | 33 | 2014 |
| Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts Y Guo, E Shi, J Zhu, PC Shen, J Wang, Y Lin, Y Mao, S Deng, B Li, ... Nature Nanotechnology 17 (3), 278-284, 2022 | 30 | 2022 |
| Insight into ballisticity of room-temperature carrier transport in carbon nanotube field-effect transistors L Xu, C Qiu, C Zhao, Z Zhang, LM Peng IEEE Transactions on Electron Devices 66 (8), 3535-3540, 2019 | 28 | 2019 |
| Suppression of leakage current in carbon nanotube field-effect transistors L Xu, C Qiu, L Peng, Z Zhang Nano Research 14, 976-981, 2021 | 27 | 2021 |
| First principles simulation of energy efficient switching by source density of states engineering F Liu, C Qiu, Z Zhang, LM Peng, J Wang, Z Wu, H Guo 2018 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2018 | 25 | 2018 |
| Improving subthreshold swing to thermionic emission limit in carbon nanotube network film-based field-effect C Zhao, D Zhong, C Qiu, J Han, Z Zhang, LM Peng Applied Physics Letters 112 (5), 2018 | 24 | 2018 |
