Kyung Min Kim
Kyung Min Kim
Associate Professor, Department of Materials Science and Engineering, KAIST
Подтвержден адрес электронной почты в домене
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ...
Nature nanotechnology 5 (2), 148-153, 2010
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
KM Kim, DS Jeong, CS Hwang
Nanotechnology 22 (25), 254002, 2011
Anode-interface localized filamentary mechanism in resistive switching of thin films
KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang
Applied physics letters 91 (1), 012907, 2007
High dielectric constant TiO2 thin films on a Ru electrode grown at 250 C by atomic-layer deposition
SK Kim, WD Kim, KM Kim, CS Hwang, J Jeong
Applied physics letters 85 (18), 4112-4114, 2004
Localized switching mechanism in resistive switching of atomic-layer-deposited TiO 2 thin films
KM Kim, BJ Choi, CS Hwang
Applied physics letters 90 (24), 242906-242906-3, 2007
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
S Kim, SJ Kim, KM Kim, SR Lee, M Chang, E Cho, YB Kim, CJ Kim, ...
Scientific reports 3, 1680, 2013
Memristors for energy‐efficient new computing paradigms
DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang
Advanced Electronic Materials 2 (9), 1600090, 2016
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ...
Nanotechnology 22 (25), 254010, 2011
The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
KM Kim, CS Hwang
Applied Physics Letters 94 (12), 122109, 2009
An artificial nociceptor based on a diffusive memristor
JH Yoon, Z Wang, KM Kim, H Wu, V Ravichandran, Q Xia, CS Hwang, ...
Nature communications 9 (1), 417, 2018
Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures
KM Kim, GH Kim, SJ Song, JY Seok, MH Lee, JH Yoon, CS Hwang
Nanotechnology 21 (30), 305203, 2010
A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays
WY Park, GH Kim, JY Seok, KM Kim, SJ Song, MH Lee, CS Hwang
Nanotechnology 21 (19), 195201, 2010
Study on the resistive switching time of thin films
BJ Choi, S Choi, KM Kim, YC Shin, CS Hwang, SY Hwang, S Cho, S Park, ...
Applied physics letters 89 (1), 012906, 2006
Pt/Ta2O5/HfO2− x/Ti resistive switching memory competing with multilevel NAND flash
JH Yoon, KM Kim, SJ Song, JY Seok, KJ Yoon, DE Kwon, TH Park, ...
Advanced Materials 27 (25), 3811-3816, 2015
Resistive Switching in Pt∕ Al2O3∕ TiO2∕ Ru Stacked Structures
KM Kim, BJ Choi, BW Koo, S Choi, DS Jeong, CS Hwang
Electrochemical and solid-state letters 9 (12), G343-G346, 2006
Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory
SR Lee, YB Kim, M Chang, KM Kim, CB Lee, JH Hur, GS Park, D Lee, ...
VLSI Technology (VLSIT), 2012 Symposium on, 71-72, 2012
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application
KM Kim, J Zhang, C Graves, JJ Yang, BJ Choi, CS Hwang, Z Li, ...
Nano letters 16 (11), 6724-6732, 2016
Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy
MH Lee, KM Kim, GH Kim, JY Seok, SJ Song, JH Yoon, CS Hwang
Applied Physics Letters 96 (15), 152909, 2010
Self‐Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance
KM Kim, SR Lee, S Kim, M Chang, CS Hwang
Advanced Functional Materials 25 (10), 1527-1534, 2015
Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell
KJ Yoon, MH Lee, GH Kim, SJ Song, JY Seok, S Han, JH Yoon, KM Kim, ...
Nanotechnology 23 (18), 185202, 2012
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20