Homer Alan Mantooth
Cited by
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Power conversion with SiC devices at extremely high ambient temperatures
T Funaki, JC Balda, J Junghans, AS Kashyap, HA Mantooth, F Barlow, ...
IEEE Transactions on Power electronics 22 (4), 1321-1329, 2007
Silicon carbide power MOSFET model and parameter extraction sequence
TR McNutt, AR Hefner, HA Mantooth, D Berning, SH Ryu
IEEE Transactions on Power Electronics 22 (2), 353-363, 2007
Extreme environment electronics
JD Cressler, HA Mantooth
CRC Press, 2017
Wide bandgap technologies and their implications on miniaturizing power electronic systems
HA Mantooth, MD Glover, P Shepherd
IEEE Journal of emerging and selected topics in Power Electronics 2 (3), 374-385, 2014
Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
J Hornberger, AB Lostetter, KJ Olejniczak, T McNutt, SM Lal, A Mantooth
2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No. 04TH8720) 4, 2538-2555, 2004
Modeling of wide bandgap power semiconductor devices—Part I
HA Mantooth, K Peng, E Santi, JL Hudgins
IEEE Transactions on Electron Devices 62 (2), 423-433, 2014
Transient electrothermal simulation of power semiconductor devices
B Du, JL Hudgins, E Santi, AT Bryant, PR Palmer, HA Mantooth
IEEE Transactions on power electronics 25 (1), 237-248, 2009
Datasheet driven silicon carbide power MOSFET model
M Mudholkar, S Ahmed, MN Ericson, SS Frank, CL Britton, HA Mantooth
IEEE Transactions on Power Electronics 29 (5), 2220-2228, 2013
Electrothermal simulation of an IGBT PWM inverter
HA Mantooth, AR Hefner
IEEE Transactions on Power Electronics 12 (3), 474-484, 1997
Overview of Modulation Strategies for LLC Resonant Converter
Y Wei, Q Luo, A Mantooth
IEEE Transactions on Power Electronics 35 (10), 10423-10443, 2020
A 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes
B Ozpineci, MS Chinthavali, LM Tolbert, AS Kashyap, HA Mantooth
IEEE Transactions on industry applications 45 (1), 278-285, 2009
Modeling with an analog hardware description language
HA Mantooth, M Fiegenbaum
Kluwer Academic, 1994
Adaptive multi-level active gate drivers for SiC power devices
S Zhao, A Dearien, Y Wu, C Farnell, AU Rashid, F Luo, HA Mantooth
IEEE Transactions on Power Electronics 35 (2), 1882-1898, 2019
Assessing the impact of SiC MOSFETs on converter interfaces for distributed energy resources
JA Carr, D Hotz, JC Balda, HA Mantooth, A Ong, A Agarwal
IEEE Transactions on Power Electronics 24 (1), 260-270, 2009
A review of switching slew rate control for silicon carbide devices using active gate drivers
S Zhao, X Zhao, Y Wei, Y Zhao, HA Mantooth
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020
Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
TR McNutt, AR Hefner, HA Mantooth, J Duliere, DW Berning, R Singh
IEEE Transactions on Power Electronics 19 (3), 573-581, 2004
A solution to press-pack packaging of SiC MOSFETS
N Zhu, HA Mantooth, D Xu, M Chen, MD Glover
IEEE Transactions on Industrial Electronics 64 (10), 8224-8234, 2017
High performance silicon carbide power packaging—past trends, present practices, and future directions
S Seal, HA Mantooth
Energies 10 (3), 341, 2017
Modeling of wide-bandgap power semiconductor devices—Part II
E Santi, K Peng, HA Mantooth, JL Hudgins
IEEE Transactions on Electron Devices 62 (2), 434-442, 2014
Cybersecurity and power electronics: Addressing the security vulnerabilities of the internet of things
JC Balda, A Mantooth, R Blum, P Tenti
IEEE Power Electronics Magazine 4 (4), 37-43, 2017
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