Burstein‐Moss effect and near‐band‐edge luminescence spectrum of highly doped indium arsenide VA Vilkotskii, DS Domanevskii, RD Kakanakov, VV Krasovskii, ...
physica status solidi (b) 91 (1), 71-81, 1979
37 1979 Low-threshold injection InGaAsP/GaAs double heterostructure lasers with separate confinement, fabricated by liquid phase epitaxy (lambda= 0. 78--0. 87. mu., I/sub th/= 460 A/cm … ZI Alferov, IN Arsent'ev, LS Vavilova, DZ Garbuzov, VV Krasovskii
Sov. Phys.-Semicond.(Engl. Transl.);(United States) 18 (9), 1984
9 1984 Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å IN Arsent'ev, NY Antonishkis, DZ Garbuzov, VV Krasovskii, ...
Fizika i Tekhnika Poluprovodnikov 21 (1), 178-181, 1987
6 1987 Continuous-wave separate-confinement InGaAsP/GaAsP double-heterostructure injection lasers fabricated by liquid epitaxy and emitting at the 0. 677. mu. wavelength ZI Alferov, IN Arsent'ev, LS Vavilova, DZ Garbuzov, VV Krasovskii, ...
Sov. Phys.-Semicond.(Engl. Transl.);(United States) 19 (6), 1985
6 1985 Photoluminescence of InGaAsP/GaAs quantum wellheterostructures formed by the laser epitaxy method ZI Alferov, NY Antomshkis, IN Arsent'ev, DZ Garbuzov, VV Krasovskii
Sov. Phys. Semicond 20, 1342, 1986
3 1986 TIME CONSTANTS OF INTRINSIC RADIATIVE TRANSITIONS IN SIZE-QUANTIZED HETEROSTRUCTURES VB Khalfin, DZ Garbuzov, VV KRASOVSKII
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (10), 1140-1144, 1986
2 1986 Lifetimes of Eigen Radiative Transitions in Quantum-Dimensional Heterostructures DZ Garbuzov, VV Krasovskii
Fizika i Tekhnika Poluprovodnikov 20 (10), 1816-1822, 1986
2 1986 Nature of Minority Impurity States in Heavily Doped Crystals VV Krasovskii
Fizika i Tekhnika Poluprovodnikov 19 (9), 1660-1666, 1985
1 1985 Separate-confinement heterolasers obtained by the modified method of liquid epitaxy ( A/cm , , K) ZI Alferov, DZ Garbuzov, VV Krasovskii, SA Nikishin, DV Sinyavskii, ...
Pisma v Zhurnal Tekhnicheskoi Fiziki 11 (23), 1409-1413, 1985
1 1985 Cathodoluminescence of heavily doped n-type indium arsenide VA Vil'kotskij, DS Domanevskij, RD Kakanakov, VV Krasovskij, ...
Fizika i Tekhnika Poluprovodnikov 13 (8), 1457-1462, 1979
1 1979 Enhancement of Photoluminescence Intensity in MOCVD‐Grown GaAs/AlGaAs Quantum Wells by Hydrogenation YA Bumai, BS Yavich, MA Sinitsyn, AG Ulyashin, NV Shlopak, ...
physica status solidi (b) 178 (1), K57-K59, 1993
1993 Quantum-Dimensional InGaAsP/GaAs Separate-Limitation Double-Heterostructure Lasers Produced by Liquid-Epitaxy Method ( , K) NY Antonishkis, IN Arsent'ev, DZ Garbuzov, VV Krasovskii, AV Tikunov
Fizika i Tekhnika Poluprovodnikov 21 (1), 162-164, 1987
1987 LUMINESCENCE EFFICIENCY AND SURFACE RECOMBINATION VELOCITY OF AL-GA-AS AND IN-GA-AS-P HETEROSTRUCTURE SYSTEMS NY ANTONISHKIS, IN ARSENTEV, DZ GARBUZOV, VP EVTIKHIEV, ...
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (4), 446-449, 1986
1986 The origin of the minority impurity states in heavily doped semiconductors DS Domanevskii, VV Krasovskii, MV Prokopenya, VA Vilkotskii, ...
physica status solidi (b) 133 (2), 693-700, 1986
1986 Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in Al Ga As and In Ga As P NY Antonishkis, IN Arsent'ev, DZ Garbuzov, VP Evtikhiev, VV Krasovskii, ...
Fizika i Tekhnika Poluprovodnikov 20 (4), 708-712, 1986
1986 Photoluminescence of InGaAsP/GaAs Quantum-Dimensional Heterostructures Produced by the Method of Liquid Epitaxy NY Antonishkis, IN Arsent'ev, DZ Garbuzov, VV Krasovskii
Fizika i Tekhnika Poluprovodnikov 20 (12), 2145-2149, 1986
1986 Formation of transition layers in heterostructures based on solid-solutions during the liquid-phase epitaxy ZI Alferov, BY Ber, DZ Garbuzov, KY Kizhaev, VV Krasovskii, SA Nikishin, ...
Pisma v Zhurnal Tekhnicheskoi Fiziki 12 (6), 335-341, 1986
1986 Separate-confinement AlGaAs/GaAs heterostructure lasers fabricated by a modified method of liquid-phase epitaxy (l sub t= 260 A/sq cm, lambda= 0.86-0.83 micron, T= 300 K) ZI Alferov, DZ Garbuzov, VV Krasovskii, SA Nikishin, DV Siniavskii
Technical Physics Letters 11, 581, 1985
1985 – Continuous Injection InGaAsP/GaAsP DH Laser with Selective Limitation Produced by Liquid EpitaxyIN Arsent'ev, DZ Garbuzov, VV Krasovskii, AV Tikunov
Fizika i Tekhnika Poluprovodnikov 19 (6), 1115-1118, 1985
1985 Auger Profiles of Composition and Luminescent Studies of Liquid-Phase InGaAsP Heterostructures with Active Regions cm DZ Garbuzov, IN Arsent'ev, BY Ber, VV Krasovskii, AV Chudinov
Fizika i Tekhnika Poluprovodnikov 19 (6), 1108-1114, 1985
1985