VV Krasovskii
VV Krasovskii
Belarussian National Technical University
Подтвержден адрес электронной почты в домене bntu.by
Название
Процитировано
Процитировано
Год
Burstein‐Moss effect and near‐band‐edge luminescence spectrum of highly doped indium arsenide
VA Vilkotskii, DS Domanevskii, RD Kakanakov, VV Krasovskii, ...
physica status solidi (b) 91 (1), 71-81, 1979
321979
Low-threshold injection InGaAsP/GaAs double heterostructure lasers with separate confinement, fabricated by liquid phase epitaxy (lambda= 0. 78--0. 87. mu., I/sub th/= 460 A/cm …
ZI Alferov, IN Arsent'ev, LS Vavilova, DZ Garbuzov, VV Krasovskii
Sov. Phys.-Semicond.(Engl. Transl.);(United States) 18 (9), 1984
81984
Continuous-wave separate-confinement InGaAsP/GaAsP double-heterostructure injection lasers fabricated by liquid epitaxy and emitting at the 0. 677. mu. wavelength
ZI Alferov, IN Arsent'ev, LS Vavilova, DZ Garbuzov, VV Krasovskii, ...
Sov. Phys.-Semicond.(Engl. Transl.);(United States) 19 (6), 1985
51985
D.-: f. Garbuzov, and VV Krasovskii
ZI Alferov, IN Arsent'ev, LS Vavilova
Fizika i Tekhnika Poluprovodnikov 18, 1655, 1984
41984
Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å
IN Arsent'ev, NY Antonishkis, DZ Garbuzov, VV Krasovskii, ...
Fizika i Tekhnika Poluprovodnikov 21 (1), 178-181, 1987
31987
PHOTOLUMINESCENCE OF INGAASP/GAAS QUANTUM-WELL HETEROSTRUCTURES FORMED BY THE LASER EPITAXY METHOD
ZI Alferov, NY Antonishkis, IN ArsentEv, DZ Garbuzov, VV Krasovskii
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (12), 1342-1344, 1986
21986
Formation of transition layers in heterostructures based on solid-solutions during the liquid-phase epitaxy
ZI Alferov, BY Ber, DZ Garbuzov, KY Kizhaev, VV Krasovskii, SA Nikishin, ...
Pisma v Zhurnal Tekhnicheskoi Fiziki 12 (6), 335-341, 1986
21986
Separate-confinement AlGaAs/GaAs heterostructure lasers fabricated by a modified method of liquid-phase epitaxy (l sub t= 260 A/sq cm, lambda= 0.86-0.83 micron, T= 300 K)
ZI Alferov, DZ Garbuzov, VV Krasovskii, SA Nikishin, DV Siniavskii
Technical Physics Letters 11, 581, 1985
21985
TIME CONSTANTS OF INTRINSIC RADIATIVE TRANSITIONS IN SIZE-QUANTIZED HETEROSTRUCTURES
VB Khalfin, DZ Garbuzov, VV KRASOVSKII
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (10), 1140-1144, 1986
11986
POSSIBLE APPLICATION OF THE LASER DOPPLER-VELOCIMETER TO THE DETERMINATION OF PARTICLE VELOCITIES IN HETEROPHASE PLASMA FLOWS OBTAINED USING ELECTRIC-ARC PLASMATRONS
VV Krasovskii, EI Palagashvili
HIGH ENERGY CHEMISTRY 13 (3), 236-239, 1979
11979
Enhancement of Photoluminescence Intensity in MOCVD‐Grown GaAs/AlGaAs Quantum Wells by Hydrogenation
YA Bumai, BS Yavich, MA Sinitsyn, AG Ulyashin, NV Shlopak, ...
physica status solidi (b) 178 (1), K57-K59, 1993
1993
Quantum-Dimensional InGaAsP/GaAs Separate-Limitation Double-Heterostructure Lasers Produced by Liquid-Epitaxy Method ( ,  K)
NY Antonishkis, IN Arsent'ev, DZ Garbuzov, VV Krasovskii, AV Tikunov
Fizika i Tekhnika Poluprovodnikov 21 (1), 162-164, 1987
1987
LUMINESCENCE EFFICIENCY AND SURFACE RECOMBINATION VELOCITY OF AL-GA-AS AND IN-GA-AS-P HETEROSTRUCTURE SYSTEMS
NY ANTONISHKIS, IN ARSENTEV, DZ GARBUZOV, VP EVTIKHIEV, ...
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (4), 446-449, 1986
1986
The origin of the minority impurity states in heavily doped semiconductors
DS Domanevskii, VV Krasovskii, MV Prokopenya, VA Vilkotskii, ...
physica status solidi (b) 133 (2), 693-700, 1986
1986
Lifetimes of Eigen Radiative Transitions in Quantum-Dimensional Heterostructures
DZ Garbuzov, VV Krasovskii
Fizika i Tekhnika Poluprovodnikov 20 (10), 1816-1822, 1986
1986
Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in AlGaAs and InGaAsP
NY Antonishkis, IN Arsent'ev, DZ Garbuzov, VP Evtikhiev, VV Krasovskii, ...
Fizika i Tekhnika Poluprovodnikov 20 (4), 708-712, 1986
1986
Photoluminescence of InGaAsP/GaAs Quantum-Dimensional Heterostructures Produced by the Method of Liquid Epitaxy
NY Antonishkis, IN Arsent'ev, DZ Garbuzov, VV Krasovskii
Fizika i Tekhnika Poluprovodnikov 20 (12), 2145-2149, 1986
1986
Nature of Minority Impurity States in Heavily Doped Crystals
VV Krasovskii
Fizika i Tekhnika Poluprovodnikov 19 (9), 1660-1666, 1985
1985
– Continuous Injection InGaAsP/GaAsP DH Laser with Selective Limitation Produced by Liquid Epitaxy
IN Arsent'ev, DZ Garbuzov, VV Krasovskii, AV Tikunov
Fizika i Tekhnika Poluprovodnikov 19 (6), 1115-1118, 1985
1985
Auger Profiles of Composition and Luminescent Studies of Liquid-Phase InGaAsP Heterostructures with Active Regions   cm
DZ Garbuzov, IN Arsent'ev, BY Ber, VV Krasovskii, AV Chudinov
Fizika i Tekhnika Poluprovodnikov 19 (6), 1108-1114, 1985
1985
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Статьи 1–20