VV Krasovskii
VV Krasovskii
Belarussian National Technical University
Подтвержден адрес электронной почты в домене bntu.by
Название
Процитировано
Процитировано
Год
Burstein‐Moss effect and near‐band‐edge luminescence spectrum of highly doped indium arsenide
VA Vilkotskii, DS Domanevskii, RD Kakanakov, VV Krasovskii, ...
physica status solidi (b) 91 (1), 71-81, 1979
331979
Low-threshold injection InGaAsP/GaAs double heterostructure lasers with separate confinement, fabricated by liquid phase epitaxy (lambda= 0. 78--0. 87. mu., I/sub th/= 460 A/cm …
ZI Alferov, IN Arsent'ev, LS Vavilova, DZ Garbuzov, VV Krasovskii
Sov. Phys.-Semicond.(Engl. Transl.);(United States) 18 (9), 1984
81984
Continuous-wave separate-confinement InGaAsP/GaAsP double-heterostructure injection lasers fabricated by liquid epitaxy and emitting at the 0. 677. mu. wavelength
ZI Alferov, IN Arsent'ev, LS Vavilova, DZ Garbuzov, VV Krasovskii, ...
Sov. Phys.-Semicond.(Engl. Transl.);(United States) 19 (6), 1985
51985
PHOTOLUMINESCENCE OF INGAASP/GAAS QUANTUM-WELL HETEROSTRUCTURES FORMED BY THE LASER EPITAXY METHOD
ZI Alferov, NY Antonishkis, IN ArsentEv, DZ Garbuzov, VV Krasovskii
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (12), 1342-1344, 1986
21986
FORMATION OF TRANSITION LAYERS IN HETEROSTRUCTURES BASED ON GAAS-ALAS SOLID-SOLUTIONS DURING THE LIQUID-PHASE EPITAXY
ZI Alferov, BY Ber, DZ Garbuzov, KY Kizhaev, VV KRASOVSKII, ...
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI 12 (6), 335-341, 1986
21986
Separate-confinement AlGaAs/GaAs heterostructure lasers fabricated by a modified method of liquid-phase epitaxy (l sub t= 260 A/sq cm, lambda= 0.86-0.83 micron, T= 300 K)
ZI Alferov, DZ Garbuzov, VV Krasovskii, SA Nikishin, DV Siniavskii
Technical Physics Letters 11, 1409-1413, 1985
21985
TIME CONSTANTS OF INTRINSIC RADIATIVE TRANSITIONS IN SIZE-QUANTIZED HETEROSTRUCTURES
VB Khalfin, DZ Garbuzov, VV KRASOVSKII
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (10), 1140-1144, 1986
11986
Enhancement of Photoluminescence Intensity in MOCVD‐Grown GaAs/AlGaAs Quantum Wells by Hydrogenation
YA Bumai, BS Yavich, MA Sinitsyn, AG Ulyashin, NV Shlopak, ...
physica status solidi (b) 178 (1), K57-K59, 1993
1993
LUMINESCENCE EFFICIENCY AND SURFACE RECOMBINATION VELOCITY OF AL-GA-AS AND IN-GA-AS-P HETEROSTRUCTURE SYSTEMS
NY ANTONISHKIS, IN ARSENTEV, DZ GARBUZOV, VP EVTIKHIEV, ...
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (4), 446-449, 1986
1986
The origin of the minority impurity states in heavily doped semiconductors
DS Domanevskii, VV Krasovskii, MV Prokopenya, VA Vilkotskii, ...
physica status solidi (b) 133 (2), 693-700, 1986
1986
SEPARATE-CONFINEMENT ALGAAS/GAAS HETEROLASERS OBTAINED BY THE MODIFIED METHOD OF LIQUID EPITAXY (IN, 260 A/CM2, LAMBDA= 0.86-0.83-MU-M, T= 300-K)
ZI ALFEROV, DZ GARBUZOV, VV KRASOVSKII, SA NIKISHIN, ...
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI 11 (23), 1409-1413, 1985
1985
Cathodoluminescence of Heavily-Doped n-Type Indium Arsenide
V Vil'kotskii, DS Domanevskii, RD Kakanakov, VV Krasovskii, VD Tkachev
Sov. Phys. Semicond., 13 (8), 853-856, 1979
1979
POSSIBLE APPLICATION OF THE LASER DOPPLER-VELOCIMETER TO THE DETERMINATION OF PARTICLE VELOCITIES IN HETEROPHASE PLASMA FLOWS OBTAINED USING ELECTRIC-ARC PLASMATRONS
VV KRASOVSKII, EI PALAGASHVILI
HIGH ENERGY CHEMISTRY 13 (3), 236-239, 1979
1979
POSSIBLE APPLICATION OF HOLOGRAPHY TO THE DETERMINATION OF THE CHARACTERISTICS OF HETEROPHASE PLASMA FLUXES
VV KRASOVSKII, TP KUYANOVA, EI PALAGASHVILI
HIGH ENERGY CHEMISTRY 13 (2), 156-158, 1979
1979
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–14