VV Krasovskii
VV Krasovskii
Belarussian National Technical University
Подтвержден адрес электронной почты в домене bntu.by
НазваниеПроцитированоГод
Burstein‐Moss effect and near‐band‐edge luminescence spectrum of highly doped indium arsenide
VA Vilkotskii, DS Domanevskii, RD Kakanakov, VV Krasovskii, ...
physica status solidi (b) 91 (1), 71-81, 1979
311979
Low-threshold injection InGaAsP/GaAs double heterostructure lasers with separate confinement, fabricated by liquid phase epitaxy (lambda= 0. 78--0. 87. mu., I/sub th/= 460 A/cm …
ZI Alferov, IN Arsent'ev, LS Vavilova, DZ Garbuzov, VV Krasovskii
Sov. Phys.-Semicond.(Engl. Transl.);(United States) 18 (9), 1984
81984
Continuous-wave separate-confinement InGaAsP/GaAsP double-heterostructure injection lasers fabricated by liquid epitaxy and emitting at the 0. 677. mu. wavelength
ZI Alferov, IN Arsent'ev, LS Vavilova, DZ Garbuzov, VV Krasovskii, ...
Sov. Phys.-Semicond.(Engl. Transl.);(United States) 19 (6), 1985
51985
PHOTOLUMINESCENCE OF INGAASP/GAAS QUANTUM-WELL HETEROSTRUCTURES FORMED BY THE LASER EPITAXY METHOD
ZI Alferov, NY Antonishkis, IN ArsentEv, DZ Garbuzov, VV Krasovskii
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (12), 1342-1344, 1986
21986
FORMATION OF TRANSITION LAYERS IN HETEROSTRUCTURES BASED ON GAAS-ALAS SOLID-SOLUTIONS DURING THE LIQUID-PHASE EPITAXY
ZI Alferov, BY Ber, DZ Garbuzov, KY Kizhaev, VV KRASOVSKII, ...
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI 12 (6), 335-341, 1986
21986
Separate-confinement AlGaAs/GaAs heterostructure lasers fabricated by a modified method of liquid-phase epitaxy (l sub t= 260 A/sq cm, lambda= 0.86-0.83 micron, T= 300 K)
ZI Alferov, DZ Garbuzov, VV Krasovskii, SA Nikishin, DV Siniavskii
Pisma v Zhurnal Tekhnischeskoi Fiziki 11, 1409-1413, 1985
21985
TIME CONSTANTS OF INTRINSIC RADIATIVE TRANSITIONS IN SIZE-QUANTIZED HETEROSTRUCTURES
VB Khalfin, DZ Garbuzov, VV KRASOVSKII
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (10), 1140-1144, 1986
11986
Enhancement of Photoluminescence Intensity in MOCVD‐Grown GaAs/AlGaAs Quantum Wells by Hydrogenation
YA Bumai, BS Yavich, MA Sinitsyn, AG Ulyashin, NV Shlopak, ...
physica status solidi (b) 178 (1), K57-K59, 1993
1993
LUMINESCENCE EFFICIENCY AND SURFACE RECOMBINATION VELOCITY OF AL-GA-AS AND IN-GA-AS-P HETEROSTRUCTURE SYSTEMS
NY ANTONISHKIS, IN ARSENTEV, DZ GARBUZOV, VP EVTIKHIEV, ...
SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (4), 446-449, 1986
1986
The origin of the minority impurity states in heavily doped semiconductors
DS Domanevskii, VV Krasovskii, MV Prokopenya, VA Vilkotskii, ...
physica status solidi (b) 133 (2), 693-700, 1986
1986
SEPARATE-CONFINEMENT ALGAAS/GAAS HETEROLASERS OBTAINED BY THE MODIFIED METHOD OF LIQUID EPITAXY (IN, 260 A/CM2, LAMBDA= 0.86-0.83-MU-M, T= 300-K)
ZI ALFEROV, DZ GARBUZOV, VV KRASOVSKII, SA NIKISHIN, ...
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI 11 (23), 1409-1413, 1985
1985
POSSIBLE APPLICATION OF THE LASER DOPPLER-VELOCIMETER TO THE DETERMINATION OF PARTICLE VELOCITIES IN HETEROPHASE PLASMA FLOWS OBTAINED USING ELECTRIC-ARC PLASMATRONS
VV KRASOVSKII, EI PALAGASHVILI
HIGH ENERGY CHEMISTRY 13 (3), 236-239, 1979
1979
POSSIBLE APPLICATION OF HOLOGRAPHY TO THE DETERMINATION OF THE CHARACTERISTICS OF HETEROPHASE PLASMA FLUXES
VV KRASOVSKII, TP KUYANOVA, EI PALAGASHVILI
HIGH ENERGY CHEMISTRY 13 (2), 156-158, 1979
1979
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Статьи 1–13