| 234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes C Liu, YK Ooi, SM Islam, HG Xing, D Jena, J Zhang Applied Physics Letters 112 (1), 2018 | 68 | 2018 |
| Delta-doped β-Ga2O3 thin films and β-(Al0. 26Ga0. 74) 2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy P Ranga, A Bhattacharyya, A Rishinaramangalam, YK Ooi, MA Scarpulla, ... Applied Physics Express 13 (4), 045501, 2020 | 57 | 2020 |
| Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes C Liu, YK Ooi, SM Islam, J Verma, HG Xing, D Jena, J Zhang Applied physics letters 110 (7), 2017 | 57 | 2017 |
| Light extraction efficiency analysis of flip-chip ultraviolet light-emitting diodes with patterned sapphire substrate YK Ooi, J Zhang IEEE Photonics Journal 10 (4), 1-13, 2018 | 52 | 2018 |
| Analysis of polarization-dependent light extraction and effect of passivation layer for 230-nm AlGaN nanowire light-emitting diodes YK Ooi, C Liu, J Zhang IEEE Photonics Journal 9 (4), 1-12, 2017 | 44 | 2017 |
| On the origin of red luminescence from iron-doped β-Ga2O3 bulk crystals R Sun, YK Ooi, PT Dickens, KG Lynn, MA Scarpulla Applied Physics Letters 117 (5), 2020 | 38 | 2020 |
| Proposal and physics of AlInN-delta-GaN quantum well ultraviolet lasers C Liu, YK Ooi, J Zhang Journal of Applied Physics 119 (8), 2016 | 23 | 2016 |
| Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/InGaN multiple quantum wells on ternary InGaN substrates YK Ooi, J Zhang AIP Advances 5 (5), 2015 | 21 | 2015 |
| Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β-Ga2O3 crystals R Sun, YK Ooi, A Bhattacharyya, M Saleh, S Krishnamoorthy, KG Lynn, ... Applied Physics Letters 117 (21), 2020 | 17 | 2020 |
| Design and analysis of neuromemristive echo state networks with limited-precision synapses C Donahue, C Merkel, Q Saleh, L Dolgovs, YK Ooi, D Kudithipudi, ... 2015 IEEE Symposium on Computational Intelligence for Security and Defense …, 2015 | 17 | 2015 |
| Oxygen annealing induced changes in defects within β-Ga2O3 epitaxial films measured using photoluminescence R Sun, YK Ooi, P Ranga, A Bhattacharyya, S Krishnamoorthy, ... Journal of Physics D: Applied Physics 54 (17), 174004, 2021 | 13 | 2021 |
| Differences in electrical responses and recovery of GaN p+ n diodes on sapphire and freestanding GaN subjected to high dose 60Co gamma-ray irradiation K Ahn, YK Ooi, F Mirkhosravi, J Gallagher, A Lintereur, D Feezell, ... Journal of Applied Physics 129 (24), 2021 | 7 | 2021 |
| Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes F Mirkhosravi, A Rashidi, J Gallagher, M Monavarian, A Aragon, K Ahn, ... AIP Advances 11 (2), 2021 | 5 | 2021 |
| Light extraction efficiency of nanostructured III-nitride light-emitting diodes YK Ooi Rochester Institute of Technology, 2019 | 3 | 2019 |
| Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO2 microsphere array C Liu, B Melanson, YK Ooi, M Hartensveld, J Zhang Gallium Nitride Materials and Devices XIV 10918, 39-44, 2019 | 2 | 2019 |
| Integration of 3D printed lens with InGaN light-emitting diodes with enhanced light extraction efficiency YK Ooi, C Ugras, C Liu, M Hartensveld, S Gandhi, D Cormier, J Zhang Advanced Fabrication Technologies for Micro/Nano Optics and Photonics X …, 2017 | 2 | 2017 |
| 246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode C Liu, YK Ooi, SM Islam, HG Xing, D Jena, J Zhang 2017 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2017 | | 2017 |
| Investigation of light extraction efficiency comparison of AlGaN-based deep-and mid-ultraviolet flip-chip light-emitting diodes with patterned sapphire substrate YK Ooi, RR Chowdhury, J Zhang Physics and Simulation of Optoelectronic Devices XXV 10098, 129-135, 2017 | | 2017 |
| Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes C Liu, YK Ooi, SM Islam, HG Xing, D Jena, J Zhang Gallium Nitride Materials and Devices XII 10104, 189-196, 2017 | | 2017 |
| Proposal of AlN-delta-GaN quantum well ultraviolet lasers C Liu, YK Ooi, J Zhang 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | | 2016 |
