| Novel quantum dot gate FETs and nonvolatile memories using lattice-matched II–VI gate insulators FC Jain, E Suarez, M Gogna, F Alamoody, D Butkiewicus, R Hohner, ... Journal of electronic materials 38, 1574-1578, 2009 | 58 | 2009 |
| Quantum dot channel (QDC) field-effect transistors (FETs) using II–VI barrier layers F Jain, S Karmakar, PY Chan, E Suarez, M Gogna, J Chandy, E Heller Journal of Electronic Materials 41, 2775-2784, 2012 | 46 | 2012 |
| Spatial wavefunction-switched (SWS) InGaAs FETs with II–VI gate insulators FC Jain, M Gogna, B Miller, E Suarez, PY Chan, S Karmakar, ... Journal of electronic materials 40 (8), 1717-1726, 2011 | 44 | 2011 |
| Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon S Karmakar, M Gogna, E Suarez, FC Jain Journal of electronic materials 40 (8), 1749-1756, 2011 | 34 | 2011 |
| Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator M Gogna, E Suarez, PY Chan, F Al-Amoody, S Karmakar, F Jain Journal of electronic materials 40, 1769-1774, 2011 | 29 | 2011 |
| Three‐state quantum dot gate field‐effect transistor in silicon‐on‐insulator S Karmakar, M Gogna, E Suarez, FC Jain IET Circuits, Devices & Systems 9 (2), 111-118, 2015 | 28 | 2015 |
| Fabrication and circuit modeling of NMOS inverter based on quantum dot gate field-effect transistors S Karmakar, JA Chandy, M Gogna, FC Jain Journal of electronic materials 41, 2184-2192, 2012 | 25 | 2012 |
| Nonvolatile memories using quantum dot (QD) floating gates assembled on II–VI tunnel insulators E Suarez, M Gogna, F Al-Amoody, S Karmakar, J Ayers, E Heller, F Jain Journal of electronic materials 39, 903-907, 2010 | 22 | 2010 |
| Application of quantum dot gate nonvolatile memory (QDNVM) in image segmentation S Karmakar, M Gogna, FC Jain Signal, image and video processing 10, 551-558, 2016 | 15 | 2016 |
| ZnS-ZnMgS-ZnS lattice-matched gate insulator as an alternative for silicon dioxide on silicon in quantum dot gate FETs (QDGFETs) S Karmakar, E Suarez, M Gogna, F Jain Journal of electronic materials 41, 2663-2670, 2012 | 15 | 2012 |
| Improved device structure of quantum dot gate FET to obtain more stable intermediate state S Karmakar, M Gogna, FC Jain Electronics letters 48 (24), 1556-1557, 2012 | 12 | 2012 |
| 3-State behavior of quantum dot gate FETs with lattice matched insulator S Karmakar, M Gogna, E Suarez, F Alamoody, E Heller, J Chandy, F Jain Proceedings of, 2009 | 11 | 2009 |
| Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators PY Chan, M Gogna, E Suarez, S Karmakar, F Al-Amoody, BI Miller, ... Journal of electronic materials 40, 1685-1688, 2011 | 8 | 2011 |
| Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior PY Chan, E Suarez, M Gogna, BI Miller, EK Heller, JE Ayers, FC Jain Journal of electronic materials 41, 2810-2815, 2012 | 7 | 2012 |
| Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator PY Chan, M Gogna, E Suarez, F Al-Amoody, S Karmakar, BI Miller, ... Journal of electronic materials 42, 3259-3266, 2013 | 6 | 2013 |
| Fabrication and Simulation of an indium gallium arsenide quantum-dot-gate field effect transistor (QDC-FET) with ZnMgS as a tunnel gate insulator FCJ P. Y. Chan, M. Gogna, E. Suarez, F. Al-Amoody, S. Karmakar, B. I. Miller ... Journal of Electronic Materials 42 (11), 3259-3266, 2013 | 6 | 2013 |
| Quantum Dot (QD) gate Si-FETs with Self-Assembled GeOX Cladded Germanium Quantum Dots M Gogna, F Al-Amoody, S Karmakar, F Papadimitrakopoulos, F Jain Nanotech 2009 Conference 1, 163-165, 2009 | 4* | 2009 |
| Nanoelectronic devices for defense and security conference M Gogna, S Karmakar, F Al-Amoody, F Papadimitrakopoulos, F Jain Ft. Lauderdale, FL, 2009 | 3 | 2009 |
| Self-assembled germanium oxide cladded germanium quantum dot gate nonvolatile memory M Gogna, S Karmakar, F Al-Amoody, F Papadimitrakopoulos, F Jain Proceedings of, 2009 | 3 | 2009 |
| Fabrication of QDNVM‐based comparator S Karmakar, M Gogna, F Jain Micro & Nano Letters 14 (9), 947-951, 2019 | 2 | 2019 |
Faquir JainProfessor of Electrical and Computer Engineering, UCONNVerified email at uconn.edu
