Amr Bayoumi
Amr Bayoumi
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MOS CV characterization of ultrathin gate oxide thickness (1.3-1.8 nm)
CH Choi, JS Goo, TY Oh, Z Yu, RW Dutton, A Bayoumi, M Cao, ...
Electron Device Letters, IEEE 20 (6), 292-294, 1999
Scientific and engineering computing using ati stream technology
A Bayoumi, M Chu, Y Hanafy, P Harrell, G Refai-Ahmed
Computing in Science and Engineering 11 (6), 92-97, 2009
CV and gate tunneling current characterization of ultra-thin gate oxide MOS (tox= 1.3-1.8 nm)
CH Choi, JS Goo, TY Oh, Z Yu, RW Dutton, A Bayoumi, M Cao, ...
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on, 63-64, 1999
Massive parallelization of SPICE device model evaluation on GPU-based SIMD architectures
AM Bayoumi, YY Hanafy
Proceedings of the 1st international forum on Next-generation multicoreá…, 2008
Parallel Circuit Simulation using the Direct Method on a Heterogeneous Cloud
A Helal, A Bayoumi, Y Hanafy
52nd Design Automation Conference (DAC 2015 ), San Francisco, CA, USA., 2015
A 0.25 μm MOSFET Technology Using In Situ Rapid Thermal Gate Dielectrics
KX Zhang, CM Osburn, G Hames, C Parker, A Bayoumi
Journal of the Electrochemical Society 143, 744, 1996
Scalability of plasma damage with gate oxide thickness
A Bayoumi, S Ma, B Langley, M Cox, M Tavassoli, C Diaz, M Cao, ...
Plasma Process-Induced Damage, 1997., 2nd International Symposium on, 11-14, 1997
Evaluation of photovoltaic properties of nanocrystalline-FeSi2 /Si heterojunctions
TY Mahmoud Shaban, Amr M. Bayoumi, Doaa Farouk, Mohamed B. Saleh
Solid State Electronics 123, 111–118, 2016
Design and operation of a cluster-tool-based rapid thermal processing module
AM Bayoumi, CL Silvestre, RT Keuhn, JR Hauser
University/Government/Industry Microelectronics Symposium, 1993á…, 1993
Hardware implementation of LU decomposition using dataflow architecture on FPGA
M Eljammaly, Y Hanafy, A Wahdan, A Bayoumi
Computer Science and Information Technology (CSIT), 2013 5th Internationalá…, 2013
Plasma Induced Charging Damage On 30┼ Gate Oxide Antenna MOS Capacitor Structure During Polysilicon Gate Etch
S Ma, C Chi, A Bayoumi, B Langley, M Cao, P Marcoux, W Greene, G Ray
Plasma Process-Induced Damage, 1997., 2nd International Symposium on, 25-28, 1997
Investigation of the Need for Alternative cleaning Chemistries for 30┼ Gate Oxides
A Bayoumi, A Fischer-Colbrie, R Parker, M Cox, W Greene
MRS Proceedings 477 (1), 1997
Low-thermal-budget MOS gate stack formation using a cluster tool rapid-thermal-processing module
AM Bayoumi, J Montgomery, RT Kuehn, FS Johnson, JR Hauser
Proceedings of SPIE 2091, 84, 1994
Temperature control of a rapid thermal processing module
AM Bayoumi
Use of WKB approximation for analytical boundary conditions in numerical solution of Schr÷dinger equation: application to semiconductor-high-k dielectric interfaces
AM Bayoumi
International Journal of Numerical Modelling: Electronic Networks, Devicesá…, 2016
D2. Simplified analytical iterations for electron wavefunction using self-consistent solution for nm MOS gate stacks
AM Bayoumi
Radio Science Conference (NRSC), 2012 29th National, 563-570, 2012
A Novel Low-Temperature Gate Oxynitride for CMOS Technologies
C Diaz, M Cox, W Greene, F Perlaki, E Carr, I Manna, A Bayoumi, M Cao, ...
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on, 49-50, 1997
Experimental optimization of transport properties of Si-SiO 2 interfaces for rapid thermal deposited gate oxides
AM Bayoumi
North Carolina State University., 1995
Analysis of Dual Gate Structures Using Double-Well and WKB Quantization Rules
AM Bayoumi
IEEE Transactions on Electron Devices 63 (9), 3627 - 3635, 2016
Bias dependence of NMOS and PMOS equivalent input circuits for 32–16nm gate length
AM Bayoumi, YY Hanafy
Radio Science Conference (NRSC), 2011 28th National, 1-6, 2011
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