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Stefan P Svensson
Stefan P Svensson
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Процитировано
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Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
D Donetsky, SP Svensson, LE Vorobjev, G Belenky
Applied Physics Letters 95 (21), 2009
1872009
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
D Donetsky, G Belenky, S Svensson, S Suchalkin
Applied Physics Letters 97 (5), 2010
1792010
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
SP Svensson, D Donetsky, D Wang, H Hier, FJ Crowne, G Belenky
Journal of Crystal Growth 334 (1), 103-107, 2011
1702011
Band gap of InAs 1− x Sb x with native lattice constant
SP Svensson, WL Sarney, H Hier, Y Lin, D Wang, D Donetsky, ...
Physical Review B 86 (24), 245205, 2012
1052012
Effects of electron heating on the two-dimensional magnetotransport in AlGaAs/GaAs heterostructures
H Sakaki, K Hirakawa, J Yoshino, SP Svensson, Y Sekiguchi, T Hotta, ...
Surface Science 142 (1-3), 306-313, 1984
1001984
Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials
I Vurgaftman, G Belenky, Y Lin, D Donetsky, L Shterengas, G Kipshidze, ...
Applied Physics Letters 108 (22), 2016
942016
Pseudomorphic HEMT technology and applications
RL Ross, SP Svensson, P Lugli
Springer Science & Business Media, 2012
912012
Properties of unrelaxed InAs1− XSbX alloys grown on compositionally graded buffers
G Belenky, D Donetsky, G Kipshidze, D Wang, L Shterengas, WL Sarney, ...
Applied physics letters 99 (14), 2011
832011
High-performance, 0.1 μm InAlAs/InGaAs high electron mobility transistors on GaAs
DM Gill, BC Kane, SP Svensson, DW Tu, PN Uppal, NE Byer
IEEE Electron Device Letters 17 (7), 328-330, 1996
751996
Photoemission studies of the band bending on MBE‐grown GaAs (001)
SP Svensson, J Kanski, TG Andersson, PO Nilsson
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1984
741984
Grating coupled multicolor quantum well infrared photodetectors
MZ Tidrow, KK Choi, AJ DeAnni, WH Chang, SP Svensson
Applied physics letters 67 (13), 1800-1802, 1995
641995
Molecular beam epitaxy control and photoluminescence properties of InAsBi
SP Svensson, H Hier, WL Sarney, D Donetsky, D Wang, G Belenky
Journal of Vacuum Science & Technology B 30 (2), 2012
602012
Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region
D Wang, D Donetsky, G Kipshidze, Y Lin, L Shterengas, G Belenky, ...
Applied Physics Letters 103 (5), 2013
492013
Al–GaAs (001) Schottky barrier formation
SP Svensson, G Landgren, TG Andersson
Journal of applied physics 54 (8), 4474-4481, 1983
471983
Band edge optical transitions in dilute-nitride GaNSb
D Wang, SP Svensson, L Shterengas, G Belenky, CS Kim, I Vurgaftman, ...
Journal of Applied Physics 105 (1), 2009
462009
Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization
JW Little, SP Svensson, WA Beck, AC Goldberg, SW Kennerly, ...
Journal of applied physics 101 (4), 2007
432007
Development of bulk InAsSb alloys and barrier heterostructures for long-wave infrared detectors
Y Lin, D Donetsky, D Wang, D Westerfeld, G Kipshidze, L Shterengas, ...
Journal of Electronic Materials 44, 3360-3366, 2015
412015
Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications
G Belenky, D Wang, Y Lin, D Donetsky, G Kipshidze, L Shterengas, ...
Applied Physics Letters 102 (11), 2013
412013
Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs [sub] 1-X [/sub] Sb [sub] X [/sub] alloys
G Belenky, G Kipshidze, D Donetsky, SP Svensson, WL Sarney, H Hier, ...
Infrared Technology and Applications XXXVII 8012, 318-327, 2011
412011
Highly mismatched N-rich GaN1− xSbx films grown by low temperature molecular beam epitaxy
KM Yu, WL Sarney, SV Novikov, D Detert, R Zhao, JD Denlinger, ...
Applied Physics Letters 102 (10), 2013
362013
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