| Unveiling the impurity band induced ferromagnetism in the magnetic semiconductor (Ga, Mn) As M Kobayashi, I Muneta, Y Takeda, Y Harada, A Fujimori, J Krempaský, ... Physical Review B 89 (20), 205204, 2014 | 116 | 2014 |
| Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopy S Ohya, I Muneta, PN Hai, M Tanaka Physical review letters 104 (16), 167204, 2010 | 68 | 2010 |
| Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization K Matsuura, T Ohashi, I Muneta, S Ishihara, K Kakushima, K Tsutsui, ... Journal of Electronic Materials 47, 3497-3501, 2018 | 55 | 2018 |
| GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier S Ohya, I Muneta, PN Hai, M Tanaka Applied Physics Letters 95 (24), 2009 | 35 | 2009 |
| Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness T Ohashi, I Muneta, K Matsuura, S Ishihara, Y Hibino, N Sawamoto, ... Applied Physics Express 10 (4), 041202, 2017 | 34 | 2017 |
| Experimental verification of a 3D scaling principle for low Vce(sat) IGBT K Kakushima, T Hoshii, K Tsutsui, A Nakajima, S Nishizawa, ... 2016 IEEE International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2016 | 31 | 2016 |
| Valence-band structure of ferromagnetic semiconductor (In, Ga, Mn) As S Ohya, I Muneta, Y Xin, K Takata, M Tanaka Physical Review B 86 (9), 094418, 2012 | 30 | 2012 |
| Digging up bulk band dispersion buried under a passivation layer M Kobayashi, I Muneta, T Schmitt, L Patthey, S Ohya, M Tanaka, ... Applied Physics Letters 101 (24), 2012 | 29 | 2012 |
| High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization M Hamada, K Matsuura, T Sakamoto, I Muneta, T Hoshii, K Kakushima, ... IEEE Journal of the Electron Devices Society 7, 1258-1263, 2019 | 23 | 2019 |
| Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor I Muneta, S Ohya, H Terada, M Tanaka Nature communications 7 (1), 12013, 2016 | 23 | 2016 |
| High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs J Shimizu, T Ohashi, K Matsuura, I Muneta, K Kakushima, K Tsutsui, ... Japanese Journal of Applied Physics 56 (4S), 04CP06, 2017 | 22 | 2017 |
| Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism I Muneta, H Terada, S Ohya, M Tanaka Applied Physics Letters 103 (3), 2013 | 22 | 2013 |
| Quantum-level control in a III–V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers S Ohya, I Muneta, M Tanaka Applied Physics Letters 96 (5), 052505, 2010 | 20 | 2010 |
| Artificial control of the bias-voltage dependence of tunnelling anisotropic magnetoresistance using quantization in a single-crystal ferromagnet I Muneta, T Kanaki, S Ohya, M Tanaka Nature communications 8, 15387, 2017 | 16 | 2017 |
| Electronic structure near the Fermi level in the ferromagnetic semiconductor GaMnAs studied by ultrafast time-resolved light-induced reflectivity measurements T Ishii, T Kawazoe, Y Hashimoto, H Terada, I Muneta, M Ohtsu, M Tanaka, ... Physical Review B 93 (24), 241303, 2016 | 16 | 2016 |
| Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing T Shirokura, I Muneta, K Kakushima, K Tsutsui, H Wakabayashi Applied Physics Letters 115 (19), 2019 | 13 | 2019 |
| Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing M Toyama, T Ohashi, K Matsuura, J Shimizu, I Muneta, K Kakushima, ... Japanese Journal of Applied Physics 57 (7S2), 07MA04, 2018 | 13 | 2018 |
| Spin-dependent tunneling transport in a ferromagnetic GaMnAs and un-doped GaAs double-quantum-well heterostructure I Muneta, S Ohya, M Tanaka Applied Physics Letters 100 (16), 2012 | 12 | 2012 |
| ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact M Hamada, K Matsuura, T Hamada, I Muneta, K Kakushima, K Tsutsui, ... Japanese Journal of Applied Physics 60 (SB), SBBH05, 2021 | 11 | 2021 |
| Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization S Imai, T Hamada, M Hamada, T Shirokura, I Muneta, K Kakushima, ... Japanese Journal of Applied Physics 60 (SB), SBBH10, 2021 | 9 | 2021 |
