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Gang Hee Han
Gang Hee Han
Подтвержден адрес электронной почты в домене inu.ac.kr
Название
Процитировано
Процитировано
Год
Recent development of two-dimensional transition metal dichalcogenides and their applications
W Choi, N Choudhary, GH Han, J Park, D Akinwande, YH Lee
Materials Today 20 (3), 116-130, 2017
26552017
Synthesis of large‐area graphene layers on poly‐nickel substrate by chemical vapor deposition: wrinkle formation
SJ Chae, F Güneş, KK Kim, ES Kim, GH Han, SM Kim, HJ Shin, SM Yoon, ...
Advanced materials 21 (22), 2328-2333, 2009
10762009
Influence of copper morphology in forming nucleation seeds for graphene growth
GH Han, F Gunes, JJ Bae, ES Kim, SJ Chae, HJ Shin, JY Choi, D Pribat, ...
Nano letters 11 (10), 4144-4148, 2011
4952011
Probing graphene grain boundaries with optical microscopy
DL Duong, GH Han, SM Lee, F Gunes, ES Kim, ST Kim, H Kim, QH Ta, ...
Nature 490 (7419), 235-239, 2012
4592012
Layer-by-layer doping of few-layer graphene film
F Gunes, HJ Shin, C Biswas, GH Han, ES Kim, SJ Chae, JY Choi, YH Lee
ACS nano 4 (8), 4595-4600, 2010
3892010
van der Waals metallic transition metal dichalcogenides
GH Han, DL Duong, DH Keum, SJ Yun, YH Lee
Chemical reviews 118 (13), 6297-6336, 2018
3302018
Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations
GH Han, NJ Kybert, CH Naylor, BS Lee, J Ping, JH Park, J Kang, SY Lee, ...
Nature communications 6 (1), 6128, 2015
3182015
Fano Resonance and Spectrally Modified Photoluminescence Enhancement in Monolayer MoS2 Integrated with Plasmonic Nanoantenna Array
B Lee, J Park, GH Han, HS Ee, CH Naylor, W Liu, ATC Johnson, ...
Nano letters 15 (5), 3646-3653, 2015
3142015
Heat dissipation of transparent graphene defoggers
JJ Bae, SC Lim, GH Han, YW Jo, DL Doung, ES Kim, SJ Chae, TQ Huy, ...
Advanced Functional Materials 22 (22), 4819-4826, 2012
2912012
Control of electronic structure of graphene by various dopants and their effects on a nanogenerator
HJ Shin, WM Choi, D Choi, GH Han, SM Yoon, HK Park, SW Kim, YW Jin, ...
Journal of the American Chemical Society 132 (44), 15603-15609, 2010
2872010
Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers
MS Kim, SJ Yun, Y Lee, C Seo, GH Han, KK Kim, YH Lee, J Kim
ACS nano 10 (2), 2399-2405, 2016
2752016
Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability
SC Lim, JH Jang, DJ Bae, GH Han, S Lee, IS Yeo, YH Lee
Applied Physics Letters 95 (26), 2009
2572009
Large Work Function Modulation of Monolayer MoS2 by Ambient Gases
SY Lee, UJ Kim, JG Chung, H Nam, HY Jeong, GH Han, H Kim, HM Oh, ...
Acs Nano 10 (6), 6100-6107, 2016
2452016
Efficient Excitonic Photoluminescence in Direct and Indirect Band Gap Monolayer MoS2
A Steinhoff, JH Kim, F Jahnke, M Rosner, DS Kim, C Lee, GH Han, ...
Nano letters 15 (10), 6841-6847, 2015
2402015
Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries
TH Ly, DJ Perello, J Zhao, Q Deng, H Kim, GH Han, SH Chae, HY Jeong, ...
Nature communications 7 (1), 10426, 2016
2252016
Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils
SJ Yun, SH Chae, H Kim, JC Park, JH Park, GH Han, JS Lee, SM Kim, ...
ACS nano 9 (5), 5510-5519, 2015
2122015
Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition
GH Han, JA Rodríguez-Manzo, CW Lee, NJ Kybert, MB Lerner, ZJ Qi, ...
Acs Nano 7 (11), 10129-10138, 2013
2122013
Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain.
BG Shin, GH Han, SJ Yun, HM Oh, JJ Bae, YJ Song, CY Park, YH Lee
Advanced Materials (Deerfield Beach, Fla.) 28 (42), 9378-9384, 2016
1712016
Frictional behavior of atomically thin sheets: hexagonal-shaped graphene islands grown on copper by chemical vapor deposition
P Egberts, GH Han, XZ Liu, ATC Johnson, RW Carpick
ACS nano 8 (5), 5010-5021, 2014
1682014
Small hysteresis nanocarbon-based integrated circuits on flexible and transparent plastic substrate
WJ Yu, SY Lee, SH Chae, D Perello, GH Han, M Yun, YH Lee
Nano letters 11 (3), 1344-1350, 2011
1682011
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