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Ramesh Thamankar
Ramesh Thamankar
Подтвержден адрес электронной почты в домене vit.ac.in - Главная страница
Название
Процитировано
Процитировано
Год
Spin-polarized transport in magnetically assembled carbon nanotube spin valves
R Thamankar, S Niyogi, BY Yoo, YW Rheem, NV Myung, RC Haddon, ...
Applied physics letters 89 (3), 2006
322006
Magnetically assembled multiwalled carbon nanotubes on ferromagnetic contacts
S Niyogi, C Hangarter, RM Thamankar, YF Chiang, R Kawakami, ...
The Journal of Physical Chemistry B 108 (51), 19818-19824, 2004
322004
Spin-reorientation transition in Fe x Ni 1− x alloy films
R Thamankar, A Ostroukhova, FO Schumann
Physical Review B 66 (13), 134414, 2002
272002
Highly Luminescent Heterostructured Copper‐Doped Zinc Sulfide Nanocrystals for Application in Cancer Cell Labeling
H Ang, M Bosman, R Thamankar, MFB Zulkifli, SK Yen, A Hariharan, ...
ChemPhysChem 17 (16), 2489-2495, 2016
252016
Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM
A Ranjan, N Raghavan, J Molina, SJ O'Shea, K Shubhakar, KL Pey
Microelectronics Reliability 64, 172-178, 2016
242016
Structural and magnetic properties of ultrathin fcc Fe x Mn 1− x films on Cu (100)
R Thamankar, S Bhagwat, FO Schumann
Physical Review B 69 (5), 054411, 2004
242004
Low temperature nanoscale electronic transport on the MoS2 surface
R Thamankar, TL Yap, KEJ Goh, C Troadec, C Joachim
Applied Physics Letters 103 (8), 2013
222013
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy
R Thamankar, N Raghavan, J Molina, FM Puglisi, SJ O'Shea, ...
Journal of Applied Physics 119 (8), 2016
212016
CAFM based spectroscopy of stress-induced defects in HfO2 with experimental evidence of the clustering model and metastable vacancy defect state
A Ranjan, N Raghavan, K Shubhakar, R Thamankar, J Molina, SJ O'Shea, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 7A-4-1-7A-4-7, 2016
182016
Effect of controlled humidity on resistive switching of multilayer VO2 devices
RT Vithaldas Raja, Keval Hadiyal, Aswini Kumar Nath, Leema Rose Viannie ...
Materials Science and Engineering B 264, 114968, 2021
142021
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations
R. Thamankar et.al
Journal of applied Physics 112, 024301, 2017
122017
Effect of submonolayer coverage of Fe and Mn films on the magnetization direction of Ni/Cu (100)
R Thamankar, S Bhagwat, FO Schumann
Journal of magnetism and magnetic materials 281 (2-3), 206-213, 2004
112004
Structural and magnetic instabilities in ultrathin Fe-rich alloy films on Cu (100)
R Thamankar, S Bhagwat, FO Schumann
Physical Review B 69 (5), 054419, 2004
102004
A non-volatile resistive memory effect in 2, 2′, 6, 6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy
M Courté, SG Surya, R Thamankar, C Shen, VR Rao, SG Mhailsalkar, ...
RSC advances 7 (6), 3336-3342, 2017
9*2017
Understanding the switching mechanism in RRAM using in-situ TEM
KL Pey, R Thamankar, M Sen, M Bosman, N Raghavan, K Shubhakar
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 36-37, 2016
92016
Nanoscale electrical and physical study of polycrystalline high-κ dielectrics and proposed reliability enhancement techniques
K Shubhakar, KL Pey, SS Kushvaha, M Bosman, SJ O'Shea, N Raghavan, ...
2011 International Reliability Physics Symposium, GD. 1.1-GD. 1.6, 2011
92011
Bio-inspired artificial synapse for neuromorphic computing based on NiO nanoparticle thin film
K Hadiyal, R Ganesan, A Rastogi, R Thamankar
Scientific Reports 13, 7481, 2023
82023
Perpendicular anisotropy in Ni rich NixMn1− x ultrathin films
R Thamankar, S Bhagwat, FO Schumann
Journal of Physics: Condensed Matter 16 (34), 6029, 2004
82004
Performance of ultra‐thin HfO2‐based MIM devices after oxygen modulation and post‐metallization annealing in N2
J Molina, R Thamankar, KL Pey
physica status solidi (a) 213 (7), 1807-1813, 2016
72016
Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM
K Shubhakar, KL Pey, M Bosman, R Thamankar, SS Kushvaha, YC Loke, ...
2012 19th IEEE International Symposium on the Physical and Failure Analysis …, 2012
72012
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