CMOS image sensors including backside illumination structure CR Moon, DH Lee, SH Cho
US Patent 8,164,126, 2012
329 2012 Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same CR Moon, YH Lee, JW Jung, BJ Park
US Patent 7,518,172, 2009
106 2009 Ferroelectric characterization of highly (0001)-oriented WC Yi, JS Choe, CR Moon, SI Kwun, JG Yoon
Applied physics letters 73 (7), 903-905, 1998
92 1998 Deep trench isolation for crosstalk suppression in active pixel sensors with 1.7 µm pixel pitch BJ Park, J Jung, CR Moon, SH Hwang, YW Lee, DW Kim, KH Paik, ...
Japanese journal of applied physics 46 (4S), 2454, 2007
74 2007 Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial BH Park, SJ Hyun, CR Moon, BD Choe, J Lee, CY Kim, W Jo, TW Noh
Journal of applied physics 84 (8), 4428-4435, 1998
74 1998 Advanced image sensor technology for pixel scaling down toward 1.0 µm JC Ahn, CR Moon, B Kim, K Lee, Y Kim, M Lim, W Lee, H Park, K Moon, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
72 2008 Image sensor and method for manufacturing the same CR Moon
US Patent 7,572,571, 2009
66 2009 Barrier device with external reinforcement structure LJ Yodock III, LJ Yodock Jr, GC Yodock
US Patent 6,666,616, 2003
63 2003 Semiconductor devices, CMOS image sensors, and methods of manufacturing same DW Kwon, J Yoo, CR Moon
US Patent 7,595,213, 2009
59 2009 Image sensors including conductive pixel separation structures J Koo, N Kim, C Moon, B Park, J Shin
US Patent 9,524,995, 2016
57 2016 A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7- MS Keel, YG Jin, Y Kim, D Kim, Y Kim, M Bae, B Chung, S Son, H Kim, ...
IEEE Journal of Solid-State Circuits 55 (4), 889-897, 2019
50 2019 Electron distribution and capacitance–voltage characteristics of n -doped quantum wells CR Moon, BD Choe, SD Kwon, HK Shin, H Lim
Journal of applied physics 84 (5), 2673-2683, 1998
46 1998 Filter, color filter array, method of manufacturing the color filter array, and image sensor CR Moon, K Paik, DH Lee, SH Hwang
US Patent 7,875,947, 2011
45 2011 Application of plasma-doping (PLAD) technique to reduce dark current of CMOS image sensors CR Moon, J Jung, DW Kwon, J Yoo, DH Lee, K Kim
IEEE electron device letters 28 (2), 114-116, 2007
45 2007 Via structures including etch-delay structures and semiconductor devices having via plugs BJ Park, CR Moon, SH Shin, SH Oh, TS Oh, JT Lee
US Patent 9,728,572, 2017
43 2017 Image sensors including color adjustment path H Ihara, CR Moon
US Patent 8,716,769, 2014
43 2014 Image sensors and methods of manufacturing image sensors S Choi, Y Park, C Hong, DL Bae, JC Ahn, CR Moon, J Koo, S Kim, HS Oh
US Patent 8,570,409, 2013
39 2013 A 0.8 µm smart dual conversion gain pixel for 64 megapixels CMOS image sensor with 12k e-full-well capacitance and low dark noise D Park, SW Lee, J Han, D Jang, H Kwon, S Cha, M Kim, H Lee, S Suh, ...
2019 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2019
37 2019 7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation JE Park, S Park, K Cho, T Lee, C Lee, DH Kim, B Lee, SI Kim, HC Ji, ...
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 122-124, 2021
36 2021 A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9 μm unit pixels separated by full-depth deep-trench isolation Y Kim, W Choi, D Park, H Jeoung, B Kim, Y Oh, S Oh, B Park, E Kim, ...
2018 IEEE International Solid-State Circuits Conference-(ISSCC), 84-86, 2018
36 2018 