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Vadim Yu. Panevin, Вадим Юрьевич Паневин
Vadim Yu. Panevin, Вадим Юрьевич Паневин
Peter the Great St.Petersburg Polytechnic University (SPbPU)
Подтвержден адрес электронной почты в домене rphf.spbstu.ru - Главная страница
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Процитировано
Год
Helicity-dependent photocurrents in graphene layers excited by midinfrared radiation of a CO 2 laser
C Jiang, VA Shalygin, VY Panevin, SN Danilov, MM Glazov, R Yakimova, ...
Physical Review B 84 (12), 125429, 2011
1202011
Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field
VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ...
Journal of applied physics 106 (12), 2009
392009
Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation
GA Melentev, VA Shalygin, LE Vorobjev, VY Panevin, DA Firsov, ...
Journal of Applied Physics 119 (9), 2016
362016
Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure
VA Shalygin, MD Moldavskaya, MY Vinnichenko, KV Maremyanin, ...
Journal of Applied Physics 126 (18), 2019
342019
Terahertz luminescence in strained GaAsN: Be layers under strong electric fields
VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ...
Applied physics letters 90 (16), 2007
302007
Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping
DA Firsov, LE Vorobjev, VY Panevin, AN Sofronov, RM Balagula, ...
Semiconductors 49, 28-32, 2015
252015
The effect of stimulated interband emission on the impurity-assisted far-infrared photoluminescence in GaAs/AlGaAs quantum wells
IS Makhov, VY Panevin, AN Sofronov, DA Firsov, LE Vorobjev, ...
Superlattices and Microstructures 112, 79-85, 2017
222017
Carrier heating in quantum wells under optical and current injection of electron-hole pairs
LE Vorobjev, MY Vinnichenko, DA Firsov, VL Zerova, VY Panevin, ...
Semiconductors 44, 1402-1405, 2010
182010
Terahertz photoluminescence of the donor doped GaAs/AlGaAs quantum wells controlled by the near-infrared stimulated emission
IS Makhov, VY Panevin, DA Firsov, LE Vorobjev, AP Vasil'ev, NA Maleev
Journal of Luminescence 210, 352-357, 2019
172019
Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots
AN Sofronov, LE Vorobjev, DA Firsov, VY Panevin, RM Balagula, ...
Superlattices and microstructures 87, 53-57, 2015
172015
Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states
DA Firsov, VA Shalygin, VY Panevin, GA Melentyev, AN Sofronov, ...
Semiconductors 44, 1394-1397, 2010
162010
Photoluminescence spectra of thin films of ZnTPP–C60 and CuTPP–C60 molecular complexes
MA Elistratova, IB Zakharova, NM Romanov, VY Panevin, OE Kvyatkovskii
Semiconductors 50 (9), 1191-1197, 2016
142016
Interaction of surface plasmon–phonon polaritons with terahertz radiation in heavily doped GaAs epilayers
VA Shalygin, MD Moldavskaya, VY Panevin, AI Galimov, GA Melentev, ...
Journal of Physics: Condensed Matter 31 (10), 105002, 2019
132019
Impurity-assisted terahertz photoluminescence in compensated quantum wells
IS Makhov, VY Panevin, DA Firsov, LE Vorobjev, GV Klimko
Journal of Applied Physics 126 (17), 2019
122019
Lateral photoconductivity in structures with Ge/Si quantum dots
VY Panevin, AN Sofronov, LE Vorobjev, DA Firsov, VA Shalygin, ...
Semiconductors 47, 1574-1577, 2013
122013
Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
LE Vorobjev, DA Firsov, VA Shalygin, NK Fedosov, VY Panevin, ...
Semiconductor science and technology 21 (9), 1341, 2006
122006
Carrier transfer in coupled asymmetric GaAs/AlGaAs double quantum wells after ultrafast intersubband excitation
LE Vorobjev, VY Panevin, NK Fedosov, DA Firsov, VA Shalygin, ...
Semiconductor science and technology 21 (9), 1267, 2006
112006
Терагерцовое излучение, связанное с примесными переходами электронов в квантовых ямах при оптической и электрической накачке
ДА Фирсов, ЛЕ Воробьев, ВЮ Паневин, АН Софронов, РМ Балагула, ...
Физика и техника полупроводников 49 (1), 30, 2015
92015
Излучение и фотопроводимость в квантовых ямах GaAs/AlGaAs n-типа в терагерцовой области спектра: роль резонансных состояний
ДА Фирсов, ВА Шалыгин, ВЮ Паневин, ГА Мелентьев, АН Софронов, ...
Физика и техника полупроводников 44 (11), 1443, 2010
92010
Intraband absorption and emission of light in quantum wells and quantum dots
LE Vorob’ev, VY Panevin, NK Fedosov, DA Firsov, VA Shalygin, S Hanna, ...
Physics of the Solid State 46, 118-121, 2004
82004
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