Helicity-dependent photocurrents in graphene layers excited by midinfrared radiation of a CO 2 laser C Jiang, VA Shalygin, VY Panevin, SN Danilov, MM Glazov, R Yakimova, ...
Physical Review B 84 (12), 125429, 2011
106 2011 Impurity breakdown and terahertz luminescence in VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ...
Journal of applied physics 106 (12), 123523, 2009
39 2009 Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation GA Melentev, VA Shalygin, LE Vorobjev, VY Panevin, DA Firsov, ...
Journal of Applied Physics 119 (9), 093104, 2016
38 2016 Terahertz luminescence in strained GaAsN: Be layers under strong electric fields VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ...
Applied physics letters 90 (16), 161128, 2007
30 2007 Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure VA Shalygin, MD Moldavskaya, MY Vinnichenko, KV Maremyanin, ...
Journal of Applied Physics 126 (18), 183104, 2019
25 2019 Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping DA Firsov, LE Vorobjev, VY Panevin, AN Sofronov, RM Balagula, ...
Semiconductors 49, 28-32, 2015
21 2015 The effect of stimulated interband emission on the impurity-assisted far-infrared photoluminescence in GaAs/AlGaAs quantum wells IS Makhov, VY Panevin, AN Sofronov, DA Firsov, LE Vorobjev, ...
Superlattices and Microstructures 112, 79-85, 2017
19 2017 Carrier heating in quantum wells under optical and current injection of electron-hole pairs. L Vorobjev, M Vinnichenko, D Firsov, V Zerova, V Panevin, A Sofronov, ...
Semiconductors 44 (11), 2010
18 2010 Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots AN Sofronov, LE Vorobjev, DA Firsov, VY Panevin, RM Balagula, ...
Superlattices and microstructures 87, 53-57, 2015
17 2015 Photoluminescence spectra of thin films of ZnTPP–C60 and CuTPP–C60 molecular complexes MA Elistratova, IB Zakharova, NM Romanov, VY Panevin, OE Kvyatkovskii
Semiconductors 50 (9), 1191-1197, 2016
14 2016 Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states. D Firsov, V Shalygin, V Panevin, G Melentyev, A Sofronov, L Vorobjev, ...
Semiconductors 44 (11), 2010
14 2010 Lateral photoconductivity in structures with Ge/Si quantum dots VY Panevin, AN Sofronov, LE Vorobjev, DA Firsov, VA Shalygin, ...
Semiconductors 47, 1574-1577, 2013
13 2013 Interaction of surface plasmon–phonon polaritons with terahertz radiation in heavily doped GaAs epilayers VA Shalygin, MD Moldavskaya, VY Panevin, AI Galimov, GA Melentev, ...
Journal of Physics: Condensed Matter 31 (10), 105002, 2019
12 2019 Terahertz photoluminescence of the donor doped GaAs/AlGaAs quantum wells controlled by the near-infrared stimulated emission IS Makhov, VY Panevin, DA Firsov, LE Vorobjev, AP Vasil'ev, NA Maleev
Journal of Luminescence 210, 352-357, 2019
11 2019 Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells LE Vorobjev, DA Firsov, VA Shalygin, NK Fedosov, VY Panevin, ...
Semiconductor science and technology 21 (9), 1341, 2006
11 2006 Carrier transfer in coupled asymmetric GaAs/AlGaAs double quantum wells after ultrafast intersubband excitation LE Vorobjev, VY Panevin, NK Fedosov, DA Firsov, VA Shalygin, ...
Semiconductor science and technology 21 (9), 1267, 2006
11 2006 Impurity-assisted terahertz photoluminescence in compensated quantum wells IS Makhov, VY Panevin, DA Firsov, LE Vorobjev, GV Klimko
Journal of Applied Physics 126 (17), 175702, 2019
8 2019 Спектральная зависимость фотолюминесценции тонких пленок молекулярных комплексов ZnTPP-C МА Елистратова, ИБ Захарова, НМ Романов, ВЮ Паневин, ...
Физика и техника полупроводников 50 (9), 1213-1219, 2016
7 2016 Interband light absorption and Pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells LE Vorobjev, NK Fedosov, VY Panevin, DA Firsov, VA Shalygin, ...
Semiconductor science and technology 22 (7), 814, 2007
7 2007 Impurity breakdown and electroluminescence in the terahertz range in p -GaAs and p -GaAsN microstructures LE Vorob’ev, DA Firsov, VA Shalygin, VY Panevin, AN Sofronov, DV Tsoi, ...
Technical Physics Letters 32, 384-387, 2006
7 2006 