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Laurence Eaves
Laurence Eaves
Подтвержден адрес электронной почты в домене nottingham.ac.uk
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Процитировано
Год
Field-effect tunneling transistor based on vertical graphene heterostructures
L Britnell, RV Gorbachev, R Jalil, BD Belle, F Schedin, A Mishchenko, ...
Science 335 (6071), 947-950, 2012
29002012
Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
T Georgiou, R Jalil, BD Belle, L Britnell, RV Gorbachev, SV Morozov, ...
Nature nanotechnology 8 (2), 100-103, 2013
18692013
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
DA Bandurin, AV Tyurnina, GL Yu, A Mishchenko, V Zólyomi, SV Morozov, ...
Nature nanotechnology 12 (3), 223-227, 2017
11612017
Electron tunneling through ultrathin boron nitride crystalline barriers
L Britnell, RV Gorbachev, R Jalil, BD Belle, F Schedin, MI Katsnelson, ...
Nano letters 12 (3), 1707-1710, 2012
9562012
Resonant tunnelling and negative differential conductance in graphene transistors
L Britnell, RV Gorbachev, AK Geim, LA Ponomarenko, A Mishchenko, ...
Nature communications 4 (1), 1794, 2013
7172013
Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement
GW Mudd, SA Svatek, T Ren, A Patanè, O Makarovsky, L Eaves, ...
Advanced Materials (Deerfield Beach, Fla.) 25 (40), 5714, 2013
6242013
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
A Mishchenko, JS Tu, Y Cao, RV Gorbachev, JR Wallbank, ...
Nature nanotechnology 9 (10), 808-813, 2014
4942014
High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures
GW Mudd, SA Svatek, L Hague, O Makarovsky, ZR Kudrynskyi, CJ Mellor, ...
Advanced Materials (Deerfield Beach, Fla.) 27 (25), 3760, 2015
3632015
Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3
D Ghazaryan, MT Greenaway, Z Wang, VH Guarochico-Moreira, ...
Nature Electronics 1 (6), 344-349, 2018
2862018
Probing the hole dispersion curves of a quantum well using resonant magnetotunneling spectroscopy
RK Hayden, DK Maude, L Eaves, EC Valadares, M Henini, FW Sheard, ...
Physical review letters 66 (13), 1749, 1991
2741991
Temperature dependence of the optical properties of self-organized quantum dots
A Polimeni, A Patane, M Henini, L Eaves, PC Main
Physical Review B 59 (7), 5064, 1999
2691999
Imaging the electron wave function in self-assembled quantum dots
EE Vdovin, A Levin, A Patane, L Eaves, PC Main, YN Khanin, ...
Science 290 (5489), 122-124, 2000
2512000
Resonant tunneling through the bound states of a single donor atom in a quantum well
MW Dellow, PH Beton, C Langerak, TJ Foster, PC Main, L Eaves, ...
Physical review letters 68 (11), 1754, 1992
2491992
Magnetic field studies of elastic scattering and optic-phonon emission in resonant-tunneling devices
ML Leadbeater, ES Alves, L Eaves, M Henini, OH Hughes, A Celeste, ...
Physical Review B 39 (5), 3438, 1989
2291989
Direct band-gap crossover in epitaxial monolayer boron nitride
C Elias, P Valvin, T Pelini, A Summerfield, CJ Mellor, TS Cheng, L Eaves, ...
Nature communications 10 (1), 2639, 2019
2262019
Fermi-edge singularity in resonant tunneling
AK Geim, PC Main, N La Scala Jr, L Eaves, TJ Foster, PH Beton, ...
Physical review letters 72 (13), 2061, 1994
2231994
Observation of'scarred'wavefunctions in a quantum well with chaotic electron dynamics
PB Wilkinson, TM Fromhold, L Eaves, FW Sheard, N Miura, T Takamasu
Nature 380 (6575), 608-610, 1996
2101996
Character of states near the Fermi level in (Ga, Mn) As: Impurity to valence band crossover
T Jungwirth, J Sinova, AH MacDonald, BL Gallagher, V Novák, ...
Physical Review B 76 (12), 125206, 2007
2072007
The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals
GW Mudd, MR Molas, X Chen, V Zólyomi, K Nogajewski, ZR Kudrynskyi, ...
Scientific reports 6 (1), 39619, 2016
2002016
Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures
F Yan, L Zhao, A Patanè, PA Hu, X Wei, W Luo, D Zhang, Q Lv, Q Feng, ...
Nanotechnology 28 (27), 27LT01, 2017
1992017
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