Longitudinal FGF23 trajectories and mortality in patients with CKD T Isakova, X Cai, J Lee, D Xie, X Wang, R Mehta, NB Allen, JJ Scialla, ... Journal of the American Society of Nephrology 29 (2), 579-590, 2018 | 135 | 2018 |
Chronic Renal Insufficiency Cohort Study (CRIC): overview and summary of selected findings M Denker, S Boyle, AH Anderson, LJ Appel, J Chen, JC Fink, J Flack, ... Clinical Journal of the American Society of Nephrology 10 (11), 2073-2083, 2015 | 128 | 2015 |
Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee Journal of Applied Physics 116 (4), 2014 | 114 | 2014 |
InGaAs tunneling field-effect-transistors with atomic-layer-deposited gate oxides H Zhao, Y Chen, Y Wang, F Zhou, F Xue, J Lee IEEE Transactions on Electron Devices 58 (9), 2990-2995, 2011 | 111 | 2011 |
Clinical profiles of Parkinson's disease associated with common leucine-rich repeat kinase 2 and glucocerebrosidase genetic variants in Chinese individuals C Wang, Y Cai, Z Gu, J Ma, Z Zheng, BS Tang, Y Xu, Y Zhou, T Feng, ... Neurobiology of aging 35 (3), 725. e1-725. e6, 2014 | 104 | 2014 |
Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory YF Chang, PY Chen, B Fowler, YT Chen, F Xue, Y Wang, F Zhou, JC Lee Journal of Applied Physics 112 (12), 2012 | 100 | 2012 |
Cytotoxic effects of dental resin liquids on primary gingival fibroblasts and periodontal ligament cells in vitro YL Lai, YT Chen, SY Lee, TM Shieh, SL Hung Journal of Oral Rehabilitation 31 (12), 1165-1172, 2004 | 93 | 2004 |
Electroforming and resistive switching in silicon dioxide resistive memory devices BW Fowler, YF Chang, F Zhou, Y Wang, PY Chen, F Xue, YT Chen, ... Rsc Advances 5 (27), 21215-21236, 2015 | 84 | 2015 |
{In} _ {0.7}{Ga} _ {0.3}{As} Tunneling Field-Effect Transistors With an I_on of 50 mu {A}/mu {m} and a Subthreshold Swing of 86 mV/dec Using {HfO} _ {2} Gate Oxide H Zhao, Y Chen, Y Wang, F Zhou, F Xue, J Lee IEEE electron device letters 31 (12), 1392-1394, 2010 | 81 | 2010 |
Effects of barrier layers on device performance of high mobility In0. 7Ga0. 3As metal-oxide-semiconductor field-effect-transistors H Zhao, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee Applied Physics Letters 96 (10), 2010 | 80 | 2010 |
Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee Journal of Applied Physics 116 (4), 2014 | 76 | 2014 |
Penetrance of LRRK2 G2385R and R1628P is modified by common PD-associated genetic variants C Wang, Y Cai, Z Zheng, BS Tang, Y Xu, T Wang, J Ma, SD Chen, ... Parkinsonism & related disorders 18 (8), 958-963, 2012 | 75 | 2012 |
High performance In0. 7Ga0. 3As metal-oxide-semiconductor transistors with mobility> 4400 cm2/V s using InP barrier layer H Zhao, YT Chen, JH Yum, Y Wang, N Goel, JC Lee Applied Physics Letters 94 (19), 2009 | 71 | 2009 |
Cognitive impairment and progression of CKD MK Tamura, K Yaffe, C Hsu, J Yang, S Sozio, M Fischer, J Chen, A Ojo, ... American Journal of Kidney Diseases 68 (1), 77-83, 2016 | 69 | 2016 |
Study of polarity effect in SiOx-based resistive switching memory YF Chang, PY Chen, YT Chen, F Xue, Y Wang, F Zhou, B Fowler, JC Lee Applied Physics Letters 101 (5), 2012 | 68 | 2012 |
Inflammation and arterial stiffness in chronic kidney disease: findings from the CRIC study E Peyster, J Chen, HI Feldman, AS Go, J Gupta, N Mitra, Q Pan, A Porter, ... American journal of hypertension 30 (4), 400-408, 2017 | 66 | 2017 |
Memory switching properties of e-beam evaporated SiOx on N++ Si substrate Y Wang, YT Chen, F Xue, F Zhou, YF Chang, B Fowler, JC Lee Applied Physics Letters 100 (8), 2012 | 66 | 2012 |
Sub-50-nmMOSFETs With Various Barrier Layer Materials F Xue, A Jiang, H Zhao, YT Chen, Y Wang, F Zhou, J Lee IEEE electron device letters 33 (1), 32-34, 2011 | 61 | 2011 |
Effects of gate-first and gate-last process on interface quality of In0. 53Ga0. 47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides H Zhao, J Huang, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee Applied Physics Letters 95 (25), 2009 | 61 | 2009 |
Red and near-infrared photoluminescence from silica-based nanoscale materials: Experimental investigation and quantum-chemical modeling AS Zyubin, YD Glinka, AM Mebel, SH Lin, LP Hwang, YT Chen The Journal of chemical physics 116 (1), 281-294, 2002 | 60 | 2002 |