Lasing in direct-bandgap GeSn alloy grown on Si S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ... Nature photonics 9 (2), 88-92, 2015 | 1313 | 2015 |
Analysis of enhanced light emission from highly strained germanium microbridges MJ Süess, R Geiger, RA Minamisawa, G Schiefler, J Frigerio, D Chrastina, ... Nature Photonics 7 (6), 466-472, 2013 | 483 | 2013 |
The refractive index of below the band gap: Accurate determination and empirical modeling S Gehrsitz, FK Reinhart, C Gourgon, N Herres, A Vonlanthen, H Sigg Journal of Applied Physics 87 (11), 7825-7837, 2000 | 401 | 2000 |
Intersubband electroluminescence from silicon-based quantum cascade structures G Dehlinger, L Diehl, U Gennser, H Sigg, J Faist, K Ensslin, ... Science 290 (5500), 2277-2280, 2000 | 377 | 2000 |
Optically pumped GeSn microdisk lasers on Si D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ... ACS photonics 3 (7), 1279-1285, 2016 | 255 | 2016 |
Three-dimensional Si/Ge quantum dot crystals D Grützmacher, T Fromherz, C Dais, J Stangl, E Müller, Y Ekinci, ... Nano letters 7 (10), 3150-3156, 2007 | 230 | 2007 |
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K V Reboud, A Gassenq, N Pauc, J Aubin, L Milord, QM Thai, M Bertrand, ... Applied Physics Letters 111 (9), 2017 | 197 | 2017 |
Bilayer Al wire-grids as broadband and high-performance polarizers Y Ekinci, HH Solak, C David, H Sigg Optics express 14 (6), 2323-2334, 2006 | 197 | 2006 |
Characterisation of rare earth selective emitters for thermophotovoltaic applications B Bitnar, W Durisch, JC Mayor, H Sigg, HR Tschudi Solar Energy Materials and Solar Cells 73 (3), 221-234, 2002 | 175 | 2002 |
Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5% RA Minamisawa, MJ Süess, R Spolenak, J Faist, C David, J Gobrecht, ... Nature communications 3 (1), 1096, 2012 | 163 | 2012 |
GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain J Chrétien, N Pauc, F Armand Pilon, M Bertrand, QM Thai, L Casiez, ... Acs Photonics 6 (10), 2462-2469, 2019 | 139 | 2019 |
Group IV direct band gap photonics: methods, challenges, and opportunities R Geiger, T Zabel, H Sigg Frontiers in Materials 2, 52, 2015 | 137 | 2015 |
Analysis of polaron effects in the cyclotron resonance of n-GaAs and AlGaAs-GaAs heterojunctions H Sigg, P Wyder, J Perenboom Physical Review B 31 (8), 5253, 1985 | 135 | 1985 |
Lasing in strained germanium microbridges FT Armand Pilon, A Lyasota, YM Niquet, V Reboud, V Calvo, N Pauc, ... Nature communications 10 (1), 2724, 2019 | 129 | 2019 |
Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain L Carroll, P Friedli, S Neuenschwander, H Sigg, S Cecchi, F Isa, ... Physical review letters 109 (5), 057402, 2012 | 124 | 2012 |
Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕ AlInAs quantum-cascade structures S Tsujino, A Borak, E Müller, M Scheinert, CV Falub, H Sigg, ... Applied Physics Letters 86 (6), 2005 | 123 | 2005 |
Electroluminescence from strain-compensated quantum-cascade structures based on a bound-to-continuum transition L Diehl, S Menteşe, E Müller, D Grützmacher, H Sigg, U Gennser, ... Applied Physics Letters 81 (25), 4700-4702, 2002 | 123 | 2002 |
Plasmonic radiance: probing structure at the ångström scale with visible light B Gallinet, T Siegfried, H Sigg, P Nordlander, OJF Martin Nano letters 13 (2), 497-503, 2013 | 122 | 2013 |
GeSn/SiGeSn heterostructure and multi quantum well lasers D Stange, N von den Driesch, T Zabel, F Armand-Pilon, D Rainko, ... ACS photonics 5 (11), 4628-4636, 2018 | 111 | 2018 |
Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion C Lange, NS Köster, S Chatterjee, H Sigg, D Chrastina, G Isella, ... Physical Review B 79 (20), 201306, 2009 | 111 | 2009 |