Electrical characteristics of Au and Ag Schottky contacts on AY Polyakov, NB Smirnov, EA Kozhukhova, VI Vdovin, K Ip, YW Heo, ...
Applied physics letters 83 (8), 1575-1577, 2003
237 2003 Properties of Si donors and persistent photoconductivity in AlGaN AY Polyakov, NB Smirnov, AV Govorkov, MG Mil'Vidskii, JM Redwing, ...
Solid-State Electronics 42 (4), 627-635, 1998
132 1998 Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, J Yang, F Ren, ...
Applied Physics Letters 112 (3), 2018
119 2018 Lateral AP Zhang, JW Johnson, F Ren, J Han, AY Polyakov, NB Smirnov, ...
Applied Physics Letters 78 (6), 823-825, 2001
119 2001 Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films AY Polyakov, NB Smirnov, AS Usikov, AV Govorkov, BV Pushniy
Solid-State Electronics 42 (11), 1959-1967, 1998
116 1998 Proton implantation effects on electrical and recombination properties of undoped ZnO AY Polyakov, NB Smirnov, AV Govorkov, EA Kozhukhova, VI Vdovin, K Ip, ...
Journal of applied physics 94 (5), 2895-2900, 2003
112 2003 Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy AY Polyakov, NB Smirnov, AV Govorkov, M Shin, M Skowronski, ...
Journal of applied physics 84 (2), 870-876, 1998
109 1998 Electrical properties of bulk semi-insulating β-Ga2O3 (Fe) AY Polyakov, NB Smirnov, IV Shchemerov, SJ Pearton, F Ren, ...
Applied Physics Letters 113 (14), 2018
97 2018 Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, SJ Pearton, ...
Applied Physics Letters 113 (9), 2018
94 2018 Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si AY Polyakov, NB Smirnov, IV Shchemerov, SJ Pearton, F Ren, ...
Apl Materials 6 (9), 2018
90 2018 Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, D Gogova, SA Tarelkin, ...
Journal of Applied Physics 123 (11), 2018
86 2018 Electrical and optical properties of Cr and Fe implanted n -GaN AY Polyakov, NB Smirnov, AV Govorkov, NV Pashkova, AA Shlensky, ...
Journal of Applied Physics 93 (9), 5388-5396, 2003
83 2003 Fast neutron irradiation effects in n-GaN AY Polyakov, NB Smirnov, AV Govorkov, AV Markov, SJ Pearton, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
80 2007 Electrical and optical properties of Fe-doped semi-insulating GaN templates AY Polyakov, NB Smirnov, AV Govorkov, SJ Pearton
Applied Physics Letters 83 (16), 3314-3316, 2003
80 2003 Effects of proton implantation on electrical and recombination properties of n-GaN AY Polyakov, AS Usikov, B Theys, NB Smirnov, AV Govorkov, F Jomard, ...
Solid-State Electronics 44 (11), 1971-1983, 2000
78 2000 Deep traps in high resistivity AlGaN films AY Polyakov, NB Smirnov, AV Govorkov, JM Redwing
Solid-State Electronics 42 (5), 831-838, 1998
74 1998 Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe AY Polyakov, AV Govorkov, NB Smirnov, NV Pashkova, SJ Pearton, K Ip, ...
Materials science in semiconductor processing 7 (1-2), 77-81, 2004
70 2004 Hydrogen plasma treatment effects on electrical and optical properties of n -ZnO AY Polyakov, NB Smirnov, AV Govorkov, K Ip, ME Overberg, YW Heo, ...
Journal of applied physics 94 (1), 400-406, 2003
70 2003 Electrical properties of undoped bulk ZnO substrates AY Polyakov, NB Smirnov, AV Govorkov, EA Kozhukhova, SJ Pearton, ...
Journal of Electronic Materials 35, 663-669, 2006
67 2006 Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕ GaN heterostructures AY Polyakov, NB Smirnov, AV Govorkov, AV Markov, SJ Pearton, ...
Journal of applied physics 98 (3), 2005
66 2005 
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