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Simon Fafard
Simon Fafard
Professor of Electrical Engineering, Universite de Sherbrooke
Подтвержден адрес электронной почты в домене usherbrooke.ca - Главная страница
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Процитировано
Год
Fine structure of neutral and charged excitons in self-assembled In (Ga) As/(Al) GaAs quantum dots
M Bayer, G Ortner, O Stern, A Kuther, AA Gorbunov, A Forchel, ...
Physical Review B 65 (19), 195315, 2002
13602002
Coupling and entangling of quantum states in quantum dot molecules
M Bayer, P Hawrylak, K Hinzer, S Fafard, M Korkusinski, ZR Wasilewski, ...
Science 291 (5503), 451-453, 2001
9972001
Hidden symmetries in the energy levels of excitonic ‘artificial atoms’
M Bayer, O Stern, P Hawrylak, S Fafard, A Forchel
Nature 405 (6789), 923-926, 2000
5552000
Electronic structure and magneto-optics of self-assembled quantum dots
A Wojs, P Hawrylak, S Fafard, L Jacak
Physical Review B 54 (8), 5604, 1996
4771996
Size and shape engineering of vertically stacked self-assembled quantum dots
ZR Wasilewski, S Fafard, JP McCaffrey
Journal of crystal growth 201, 1131-1135, 1999
4681999
Quantum dot infrared photodetectors
HC Liu, M Gao, J McCaffrey, ZR Wasilewski, S Fafard
Applied Physics Letters 78 (1), 79-81, 2001
3972001
Red-emitting semiconductor quantum dot lasers
S Fafard, K Hinzer, S Raymond, M Dion, J McCaffrey, Y Feng, ...
Science 274 (5291), 1350-1353, 1996
3871996
State filling and time-resolved photoluminescence of excited states in As/GaAs self-assembled quantum dots
S Raymond, S Fafard, PJ Poole, A Wojs, P Hawrylak, S Charbonneau, ...
Physical Review B 54 (16), 11548, 1996
3221996
State filling and time-resolved photoluminescence of excited states in As/GaAs self-assembled quantum dots
S Raymond, S Fafard, PJ Poole, A Wojs, P Hawrylak, S Charbonneau, ...
Physical Review B 54 (16), 11548, 1996
3161996
Time‐resolved optical characterization of InGaAs/GaAs quantum dots
G Wang, S Fafard, D Leonard, JE Bowers, JL Merz, PM Petroff
Applied physics letters 64 (21), 2815-2817, 1994
3071994
Spatially resolved visible luminescence of self-assembled semiconductor quantum dots
R Leon, PM Petroff, D Leonard, S Fafard
Science 267 (5206), 1966-1968, 1995
2891995
Phonons and radiative recombination in self-assembled quantum dots
S Farfad, R Leon, D Leonard, JL Merz, PM Petroff
Physical Review B 52 (8), 5752, 1995
2691995
Manipulating the energy levels of semiconductor quantum dots
S Fafard, ZR Wasilewski, CN Allen, D Picard, M Spanner, JP McCaffrey, ...
Physical Review B 59 (23), 15368, 1999
2521999
Molecular‐beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs
D Leonard, M Krishnamurthy, S Fafard, JL Merz, PM Petroff
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
2411994
InAs self‐assembled quantum dots on InP by molecular beam epitaxy
S Fafard, Z Wasilewski, J McCaffrey, S Raymond, S Charbonneau
Applied Physics Letters 68 (7), 991-993, 1996
2351996
Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
S Fafard, D Leonard, JL Merz, PM Petroff
Applied physics letters 65 (11), 1388-1390, 1994
2241994
Intermixing in quantum-dot ensembles with sharp adjustable shells
S Fafard, CN Allen
Applied physics letters 75 (16), 2374-2376, 1999
2161999
Visible luminescence from semiconductor quantum dots in large ensembles
R Leon, S Fafard, D Leonard, JL Merz, PM Petroff
Applied physics letters 67 (4), 521-523, 1995
2111995
Passive integrated optics elements based on long-range surface plasmon polaritons
R Charbonneau, C Scales, I Breukelaar, S Fafard, N Lahoud, G Mattiussi, ...
Journal of Lightwave Technology 24 (1), 477-494, 2006
2062006
Exciton transport in O: Evidence for excitonic superfluidity?
E Fortin, S Fafard, A Mysyrowicz
Physical review letters 70 (25), 3951, 1993
1961993
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Статьи 1–20