270 nm pseudomorphic ultraviolet light-emitting diodes with over 60 mW continuous wave output power JR Grandusky, J Chen, SR Gibb, MC Mendrick, CG Moe, L Rodak, ...
Applied Physics Express 6 (3), 032101, 2013
203 2013 High-Power 2.2- R Liang, J Chen, G Kipshidze, D Westerfeld, L Shterengas, G Belenky
IEEE Photonics Technology Letters 23 (10), 603-605, 2011
46 2011 Effect of quantum well compressive strain above 1% on differential gain and threshold current density in type-I GaSb-based diode lasers J Chen, D Donetsky, L Shterengas, MV Kisin, G Kipshidze, G Belenky
IEEE Journal of Quantum Electronics 44 (12), 1204-1210, 2008
43 2008 Diode lasers emitting at 3 µm with 300 mW of continuous-wave output power L Shterengas, G Kipshidze, T Hosoda, J Chen, G Belenky
Electronics letters 45 (18), 942-943, 2009
35 2009 Photon extraction from nitride ultraviolet light-emitting devices LJ Schowalter, J Chen, JR Grandusky
US Patent 8,962,359, 2015
34 2015 Ultraviolet light-emitting devices and methods M Toita, J Chen, Y Li, Y Wang, H Ishii, K Kitamura
US Patent 9,293,670, 2016
32 2016 High-Power 2 J Chen, G Kipshidze, L Shterengas
IEEE journal of quantum electronics 46 (10), 1464-1469, 2010
25 2010 Diode lasers with asymmetric waveguide and improved beam properties J Chen, G Kipshidze, L Shterengas
Applied Physics Letters 96 (24), 2010
25 2010 Two-inch aluminum nitride (AIN) single crystal growth for commercial applications RT Bondokov, SP Branagan, N Ishigami, J Grandusky, T Nagatomi, ...
ECS Transactions 104 (7), 37, 2021
16 2021 Systems and methods for fluid treatment with homogeneous distribution of ultraviolet light J Chen, RV Randive, C Moe
US Patent 9,321,658, 2016
15 2016 High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime CG Moe, JR Grandusky, J Chen, K Kitamura, MC Mendrick, M Jamil, ...
Gallium Nitride Materials and Devices IX 8986, 234-238, 2014
13 2014 Correlation between optical and electrical performance of mid‐ultraviolet light‐emitting diodes on AlN substrates CG Moe, GA Garrett, JR Grandusky, J Chen, LE Rodak, P Rotella, ...
physica status solidi (c) 11 (3‐4), 786-789, 2014
13 2014 Single spatial mode room temperature operated 3.15 µm diode lasers J Chen, T Hosoda, G Kipshidze, L Shterengas, G Belenky, A Soibel, ...
Electronics letters 46 (5), 367-368, 2010
13 2010 2.7- J Chen, G Kipshidze, L Shterengas, T Hosoda, Y Wang, D Donetsky, ...
IEEE Photonics Technology Letters 21 (16), 1112-1114, 2009
13 2009 Ultraviolet light-emitting devices and methods M Toita, J Chen, Y Li, Y Wang, H Ishii, K Kitamura
US Patent 10,383,963, 2019
11 2019 Thermal control for formation and processing of aluminum nitride RT Bondokov, J Chen, K Yamaoka, S Wang, SP Rao, T Suzuki, ...
US Patent 10,550,493, 2020
8 2020 Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 µm and 3-3.1 µm with improved room-temperature performance G Belenky, D Donetski, L Shterengas, T Hosoda, J Chen, G Kipshidze, ...
Quantum Sensing and Nanophotonic Devices V 6900, 20-29, 2008
8 2008 Progress in development of room temperature cw gasb based diode lasers for 2-3.5 μm spectral region T HOSODA, J CHEN, G TSVID, D WESTERFELD, RUI LIANG, ...
International Journal of High Speed Electronics and Systems 20 (01), 43-49, 2011
7 2011 Thermal control for formation and processing of aluminum nitride RT Bondokov, J Chen, K Yamaoka, S Wang, SP Rao, T Suzuki, ...
US Patent 10,851,474, 2020
6 2020 Photon extraction from ultraviolet light-emitting devices K Kitamura, M Toita, H Ishii, Y Wang, LJ Schowalter, J Chen, ...
US Patent 9,935,247, 2018
6 2018 