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Nanbo Gong
Nanbo Gong
IBM T.J. Watson research center, Yale University, Peking University
Подтвержден адрес электронной почты в домене aya.yale.edu
Название
Процитировано
Процитировано
Год
Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
N Gong, TP Ma
IEEE Electron Device Letters 37 (9), 1123-1126, 2016
2122016
A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation
N Gong, TP Ma
IEEE Electron Device Letters 39 (1), 15-18, 2017
1922017
Roadmap on emerging hardware and technology for machine learning
K Berggren, Q Xia, KK Likharev, DB Strukov, H Jiang, T Mikolajick, ...
Nanotechnology 32 (1), 012002, 2020
1802020
Signal and noise extraction from analog memory elements for neuromorphic computing
N Gong, T Idé, S Kim, I Boybat, A Sebastian, V Narayanan, T Ando
Nature communications 9 (1), 2102, 2018
1092018
Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics
N Gong, X Sun, H Jiang, KS Chang-Liao, Q Xia, TP Ma
Applied Physics Letters 112 (26), 2018
1002018
Causes of ferroelectricity in HfO 2-based thin films: an ab initio perspective
M Dogan, N Gong, TP Ma, S Ismail-Beigi
Physical Chemistry Chemical Physics 21 (23), 12150-12162, 2019
712019
Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning
W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ...
2019 Symposium on VLSI Technology, T66-T67, 2019
572019
Artificial Neural Network Based on Doped HfO2 Ferroelectric Capacitors With Multilevel Characteristics
Q Zheng, Z Wang, N Gong, Z Yu, C Chen, Y Cai, Q Huang, H Jiang, Q Xia, ...
IEEE Electron Device Letters 40 (8), 1309-1312, 2019
522019
New insights into AC RTN in scaled high-к/metal-gate MOSFETs under digital circuit operations
J Zou, R Wang, N Gong, R Huang, X Xu, J Ou, C Liu, J Wang, J Liu, J Wu, ...
2012 Symposium on VLSI Technology (VLSIT), 139-140, 2012
432012
Comprehensive scaling study on 3D cross-point PCM toward 1Znm node for SCM applications
WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ...
2019 Symposium on VLSI Technology, T60-T61, 2019
252019
Reliability challenges with materials for analog computing
EA Cartier, W Kim, N Gong, T Gokmen, MM Frank, DM Bishop, Y Kim, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2019
212019
Retention and endurance of FeFET memory cells
TP Ma, N Gong
2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019
192019
Mushroom-type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation
RL Bruce, SG Sarwat, I Boybat, CW Cheng, W Kim, SR Nandakumar, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021
182021
Si incorporation into AsSeGe chalcogenides for high thermal stability, high endurance and extremely low Vth drift 3D stackable cross-point memory
HY Cheng, IT Kuo, WC Chien, CW Yeh, YC Chou, N Gong, L Gignac, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
172020
A no-verification multi-level-cell (MLC) operation in cross-point OTS-PCM
N Gong, W Chien, Y Chou, C Yeh, N Li, H Cheng, C Cheng, I Kuo, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
162020
Fin-width effects on characteristics of InGaAs-based independent double-gate FinFETs
SJ Chang, H Zhou, N Gong, DM Kang, JW Lim, M Si, DY Peide, TP Ma
IEEE Electron Device Letters 38 (4), 441-444, 2017
142017
Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
N Gong, MJ Rasch, SC Seo, A Gasasira, P Solomon, V Bragaglia, ...
2022 International Electron Devices Meeting (IEDM), 33.7. 1-33.7. 4, 2022
122022
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory
HY Cheng, WC Chien, IT Kuo, CH Yang, YC Chou, RL Bruce, EK Lai, ...
2021 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2021
122021
Material to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning
M Abedin, N Gong, K Beckmann, M Liehr, I Saraf, O Van der Straten, ...
Scientific Reports 13 (1), 14963, 2023
82023
Multi level cell (MLC) in 3D crosspoint phase change memory array
N Gong
Science China. Information Sciences 64 (6), 166401, 2021
82021
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