Design rules for minimizing voltage losses in high-efficiency organic solar cells D Qian, Z Zheng, H Yao, W Tress, TR Hopper, S Chen, S Li, J Liu, S Chen, ... Nature materials 17 (8), 703-709, 2018 | 813 | 2018 |
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy IA Buyanova, WM Chen, G Pozina, JP Bergman, B Monemar, HP Xin, ... Applied physics letters 75 (4), 501-503, 1999 | 324 | 1999 |
Electronic properties of ga (in) nas alloys IA Buyanova, WM Chen, B Monemar Materials Research Society Internet Journal of Nitride Semiconductor …, 2001 | 237 | 2001 |
Direct determination of electron effective mass in GaNAs/GaAs quantum wells PN Hai, WM Chen, IA Buyanova, HP Xin, CW Tu Applied Physics Letters 77 (12), 1843-1845, 2000 | 215 | 2000 |
Wide bandgap GaN-based semiconductors for spintronics SJ Pearton, CR Abernathy, GT Thaler, RM Frazier, DP Norton, F Ren, ... Journal of Physics: Condensed Matter 16 (7), R209, 2004 | 194 | 2004 |
ZnO doped with transition metal ions SJ Pearton, DP Norton, MP Ivill, AF Hebard, JM Zavada, WM Chen, ... IEEE Transactions on electron devices 54 (5), 1040-1048, 2007 | 187 | 2007 |
Oxygen and zinc vacancies in as-grown ZnO single crystals XJ Wang, LS Vlasenko, SJ Pearton, WM Chen, IA Buyanova Journal of Physics D: Applied Physics 42 (17), 175411, 2009 | 166 | 2009 |
Physics and applications of dilute nitrides I Buyanova, W Chen CRC Press, 2004 | 159 | 2004 |
Influence of conduction-band nonparabolicity on electron confinement and effective mass in quantum wells S Tomić, EP O’Reilly, PJ Klar, H Grüning, W Heimbrodt, WM Chen, ... Physical Review B—Condensed Matter and Materials Physics 69 (24), 245305, 2004 | 133 | 2004 |
Time-resolved studies of photoluminescence in alloys: Evidence for indirect-direct band gap crossover IA Buyanova, G Pozina, JP Bergman, WM Chen, HP Xin, CW Tu Applied physics letters 81 (1), 52-54, 2002 | 128 | 2002 |
Mechanism for rapid thermal annealing improvements in undoped structures grown by molecular beam epitaxy IA Buyanova, G Pozina, PN Hai, NQ Thinh, JP Bergman, WM Chen, ... Applied Physics Letters 77 (15), 2325-2327, 2000 | 120 | 2000 |
Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor XJ Wang, IA Buyanova, F Zhao, D Lagarde, A Balocchi, X Marie, CW Tu, ... Nature materials 8 (3), 198-202, 2009 | 112 | 2009 |
Ferromagnetism in transition-metal doped ZnO SJ Pearton, DP Norton, MP Ivill, AF Hebard, JM Zavada, WM Chen, ... Journal of Electronic Materials 36, 462-471, 2007 | 110 | 2007 |
Band gap properties of Zn1− xCdxO alloys grown by molecular-beam epitaxy XJ Wang, IA Buyanova, WM Chen, M Izadifard, S Rawal, DP Norton, ... Applied Physics Letters 89 (15), 2006 | 91 | 2006 |
Type I band alignment in the quantum wells IA Buyanova, G Pozina, PN Hai, WM Chen, HP Xin, CW Tu Physical Review B 63 (3), 033303, 2000 | 91 | 2000 |
Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures IA Buyanova, WM Chen, B Monemar, HP Xin, CW Tu Applied Physics Letters 75 (24), 3781-3783, 1999 | 87 | 1999 |
Near‐Infrared Light‐Responsive Cu‐Doped Cs2AgBiBr6 F Ji, Y Huang, F Wang, L Kobera, F Xie, J Klarbring, S Abbrent, J Brus, ... Advanced Functional Materials 30 (51), 2005521, 2020 | 85 | 2020 |
Radiative recombination mechanism in alloys IA Buyanova, GY Rudko, WM Chen, HP Xin, CW Tu Applied physics letters 80 (10), 1740-1742, 2002 | 79 | 2002 |
Formation of nonradiative defects in molecular beam epitaxial studied by optically detected magnetic resonance NQ Thinh, IA Buyanova, WM Chen, HP Xin, CW Tu Applied Physics Letters 79 (19), 3089-3091, 2001 | 79 | 2001 |
Photoluminescence of GaN: Effect of electron irradiation IA Buyanova, M Wagner, WM Chen, B Monemar, JL Lindström, H Amano, ... Applied physics letters 73 (20), 2968-2970, 1998 | 75 | 1998 |