Follow
Myung-Jae Lee
Myung-Jae Lee
Principal Investigator / Principal Research Scientist, KIST (Korea Institute of Science and
Verified email at kist.re.kr - Homepage
Title
Cited by
Cited by
Year
A 256× 256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6 dB interference suppression
AR Ximenes, P Padmanabhan, MJ Lee, Y Yamashita, DN Yaung, ...
2018 IEEE International Solid-State Circuits Conference-(ISSCC), 96-98, 2018
1152018
Si avalanche photodetectors fabricated in standard complementary metal-oxide-semiconductor process
HS Kang, MJ Lee, WY Choi
Applied physics letters 90 (15), 2007
1042007
10-Gb/s 850-nm CMOS OEIC receiver with a silicon avalanche photodetector
JS Youn, MJ Lee, KY Park, WY Choi
IEEE journal of quantum electronics 48 (2), 229-236, 2011
922011
A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product
MJ Lee, WY Choi
Optics Express 18 (23), 24189-24194, 2010
902010
High-performance back-illuminated three-dimensional stacked single-photon avalanche diode implemented in 45-nm CMOS technology
MJ Lee, AR Ximenes, P Padmanabhan, TJ Wang, KC Huang, ...
IEEE Journal of selected topics in quantum electronics 24 (6), 1-9, 2018
892018
A modular, direct time-of-flight depth sensor in 45/65-nm 3-D-stacked CMOS technology
AR Ximenes, P Padmanabhan, MJ Lee, Y Yamashita, DN Yaung, ...
IEEE Journal of Solid-State Circuits 54 (11), 3203-3214, 2019
842019
Effects of guard-ring structures on the performance of silicon avalanche photodetectors fabricated with standard CMOS technology
MJ Lee, H Rucker, WY Choi
IEEE Electron Device Letters 33 (1), 80-82, 2011
802011
A low-noise CMOS SPAD pixel with 12.1 ps SPTR and 3 ns dead time
F Gramuglia, ML Wu, C Bruschini, MJ Lee, E Charbon
IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2021
732021
A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device
MJ Lee, P Sun, E Charbon
Optics express 23 (10), 13200-13209, 2015
622015
7.4 A 256× 128 3D-stacked (45nm) SPAD FLASH LiDAR with 7-level coincidence detection and progressive gating for 100m range and 10klux background light
P Padmanabhan, C Zhang, M Cazzaniga, B Efe, AR Ximenes, MJ Lee, ...
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 111-113, 2021
582021
Area-dependent photodetection frequency response characterization of silicon avalanche photodetectors fabricated with standard CMOS technology
MJ Lee, WY Choi
IEEE Transactions on Electron Devices 60 (3), 998-1004, 2013
572013
Equivalent circuit model for Si avalanche photodetectors fabricated in standard CMOS process
MJ Lee, HS Kang, WY Choi
IEEE electron device letters 29 (10), 1115-1117, 2008
492008
High-speed CMOS integrated optical receiver with an avalanche photodetector
JS Youn, HS Kang, MJ Lee, KY Park, WY Choi
IEEE Photonics Technology Letters 21 (20), 1553-1555, 2009
482009
Progress in single-photon avalanche diode image sensors in standard CMOS: From two-dimensional monolithic to three-dimensional-stacked technology
MJ Lee, E Charbon
Japanese Journal of Applied Physics 57 (10), 1002A3, 2018
462018
3D-stacked CMOS SPAD image sensors: Technology and applications
E Charbon, C Bruschini, MJ Lee
2018 25th IEEE International Conference on Electronics, Circuits and Systems …, 2018
432018
Engineering breakdown probability profile for PDP and DCR optimization in a SPAD fabricated in a standard 55 nm BCD process
F Gramuglia, P Keshavarzian, E Kizilkan, C Bruschini, SS Tan, M Tng, ...
IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2021
392021
A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology
MJ Lee, AR Ximenes, P Padmanabhan, TJ Wang, KC Huang, ...
2017 IEEE International Electron Devices Meeting (IEDM), 16.6. 1-16.6. 4, 2017
312017
First CMOS silicon avalanche photodetectors with over 10-GHz bandwidth
MJ Lee
IEEE Photonics Technology Letters 28 (3), 276-279, 2015
292015
Performance optimization and improvement of silicon avalanche photodetectors in standard CMOS technology
MJ Lee, WY Choi
IEEE Journal of Selected Topics in Quantum Electronics 24 (2), 1-13, 2017
282017
An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetectorin standard SiGe BiCMOS technology
JS Youn, MJ Lee, KY Park, H Rücker, WY Choi
Optics express 20 (27), 28153-28162, 2012
252012
The system can't perform the operation now. Try again later.
Articles 1–20