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Arunas Krotkus
Arunas Krotkus
Center for Physical Sciences and Technology, Vilnius, Lithuania
Подтвержден адрес электронной почты в домене pfil.lt
Название
Процитировано
Процитировано
Год
Valence band anticrossing in GaBixAs1− x
K Alberi, OD Dubon, W Walukiewicz, KM Yu, K Bertulis, A Krotkus
Applied Physics Letters 91 (5), 2007
3872007
GaBiAs: A material for optoelectronic terahertz devices
K Bertulis, A Krotkus, G Aleksejenko, V Pačebutas, R Adomavičius, ...
Applied physics letters 88 (20), 2006
2042006
Terahertz frequency detection and identification of materials and objects
RE Miles, XC Zhang, H Eisele, A Krotkus
Springer Science & Business Media, 2007
1732007
Semiconductors for terahertz photonics applications
A Krotkus
Journal of Physics D: Applied Physics 43 (27), 273001, 2010
1492010
Terahertz emission from p-lnAs due to the instantaneous polarization
R Adomavičius, A Urbanowicz, G Molis, A Krotkus, E Šatkovskis
Applied physics letters 85 (13), 2463-2465, 2004
1372004
Picosecond carrier lifetime in GaAs implanted with high doses of As ions: an alternative material to low‐temperature GaAs for optoelectronic applications
A Krotkus, S Marcinkevicius, J Jasinski, M Kaminska, HH Tan, C Jagadish
Applied physics letters 66 (24), 3304-3306, 1995
1191995
THz emission from semiconductor surfaces
VL Malevich, R Adomavičius, A Krotkus
Comptes Rendus. Physique 9 (2), 130-141, 2008
1052008
Terahertz time-domain-spectroscopy system based on femtosecond Yb: fiber laser and GaBiAs photoconducting components
V Pačebutas, A Bičiūnas, S Balakauskas, A Krotkus, G Andriukaitis, ...
Applied Physics Letters 97 (3), 2010
932010
Efficiency improvement by porous silicon coating of multicrystalline solar cells
A Krotkus, K Grigoras, V Pačebutas, I Barsony, E Vazsonyi, M Fried, ...
Solar Energy Materials and Solar Cells 45 (3), 267-273, 1997
901997
Terahertz Emission from Tubular Pb(Zr,Ti)O3 Nanostructures
JF Scott, HJ Fan, S Kawasaki, J Banys, M Ivanov, A Krotkus, J Macutkevic, ...
Nano Letters 8 (12), 4404-4409, 2008
752008
Spectral dependencies of terahertz emission from InAs and InSb
R Adomavičius, G Molis, A Krotkus, V Sirutkaitis
Applied Physics Letters 87 (26), 2005
712005
Non-stoichiometric semiconductor materials for terahertz optoelectronics applications
A Krotkus, JL Coutaz
Semiconductor science and technology 20 (7), S142, 2005
692005
The porous silicon emitter concept applied to multicrystalline silicon solar cells
S Strehlke, D Sarti, A Krotkus, K Grigoras, C Lévy-Clément
Thin Solid Films 297 (1-2), 291-295, 1997
661997
Quantum dot materials for terahertz generation applications
RR Leyman, A Gorodetsky, N Bazieva, G Molis, A Krotkus, E Clarke, ...
Laser & Photonics Reviews 10 (5), 772-779, 2016
622016
Multi‐quantum well Ga (AsBi)/GaAs laser diodes with more than 6% of bismuth
R Butkutė, A Geižutis, V Pačebutas, B Čechavičius, V Bukauskas, ...
Electronics letters 50 (16), 1155-1157, 2014
572014
Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs
A Krotkus, K Bertulis, L Dapkus, U Olin, S Marcinkevičius
Applied physics letters 75 (21), 3336-3338, 1999
561999
Terahertz probing of onion-like carbon-PMMA composite films
J Macutkevic, R Adomavicius, A Krotkus, D Seliuta, G Valusis, ...
Diamond and Related Materials 17 (7-10), 1608-1612, 2008
552008
THz excitation spectra of AIIIBV semiconductors
A Arlauskas, A Krotkus
Semiconductor Science and Technology 27 (11), 115015, 2012
542012
Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications
V Pačebutas, K Bertulis, G Aleksejenko, A Krotkus
Journal of Materials Science: Materials in Electronics 20, 363-366, 2009
542009
Be-doped low-temperature-grown GaAs material for optoelectronic switches
A Krotkus, K Bertulis, M Kaminska, K Korona, A Wolos, J Siegert, ...
IEE Proceedings-Optoelectronics 149 (3), 111-115, 2002
532002
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Статьи 1–20