The germanium quantum information route G Scappucci, C Kloeffel, FA Zwanenburg, D Loss, M Myronov, JJ Zhang, ...
Nature Reviews Materials, 1-18, 2020
256 2020 Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ...
Applied physics letters 102 (19), 192103, 2013
191 2013 Ohmic contacts to n-type germanium with low specific contact resistivity K Gallacher, P Velha, DJ Paul, I MacLaren, M Myronov, DR Leadley
Applied Physics Letters 100 (2), 022113, 2012
119 2012 Experimental Demonstration of Room-Temperature Spin Transport in -Type Germanium Epilayers S Dushenko, M Koike, Y Ando, T Shinjo, M Myronov, M Shiraishi
Physical review letters 114 (19), 196602, 2015
109 2015 Ultra-high hole mobility exceeding one million in a strained germanium quantum well A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ...
Applied Physics Letters 101 (17), 172108, 2012
104 2012 Reverse graded relaxed buffers for high Ge content SiGe virtual substrates VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley
Applied Physics Letters 93 (19), 192103, 2008
104 2008 Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm RE Warburton, G Intermite, M Myronov, P Allred, DR Leadley, K Gallacher, ...
IEEE Transactions on Electron Devices 60 (11), 3807-3813, 2013
100 2013 Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates VA Shah, A Dobbie, M Myronov, DR Leadley
Journal of Applied Physics 107 (6), 064304, 2010
97 2010 Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 223704, 2013
93 2013 Mobility spectrum computational analysis using a maximum entropy approach S Kiatgamolchai, M Myronov, OA Mironov, VG Kantser, EHC Parker, ...
Physical Review E 66 (3), 036705, 2002
92 2002 High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate VA Shah, A Dobbie, M Myronov, DR Leadley
Solid-State Electronics 62 (1), 189-194, 2011
80 2011 Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ...
Optics letters 36 (21), 4158-4160, 2011
70 2011 Extremely high room-temperature two-dimensional hole gas mobility in p -type modulation-doped heterostructures M Myronov, T Irisawa, OA Mironov, S Koh, Y Shiraki, TE Whall, ...
Applied physics letters 80 (17), 3117-3119, 2002
67 2002 Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas C Morrison, P Wiśniewski, SD Rhead, J Foronda, DR Leadley, M Myronov
Applied Physics Letters 105 (18), 182401, 2014
58 2014 Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers F Pezzoli, A Giorgioni, D Patchett, M Myronov
Acs Photonics 3 (11), 2004-2009, 2016
56 2016 Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures T Irisawa, M Myronov, OA Mironov, EHC Parker, K Nakagawa, M Murata, ...
Applied Physics Letters 82 (9), 1425-1427, 2003
56 2003 Uprooting defects to enable high-performance III–V optoelectronic devices on silicon YA Bioud, A Boucherif, M Myronov, A Soltani, G Patriarche, N Braidy, ...
Nature communications 10 (1), 1-12, 2019
54 2019 Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001) VA Shah, A Dobbie, M Myronov, DR Leadley
Thin Solid Films 519 (22), 7911-7917, 2011
54 2011 Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures M Myronov, K Sawano, Y Shiraki, T Mouri, KM Itoh
Applied Physics Letters 91 (8), 082108, 2007
49 2007 High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth RJH Morris, TJ Grasby, R Hammond, M Myronov, OA Mironov, ...
Semiconductor science and technology 19 (10), L106, 2004
48 2004