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Khalil gabriel El hajjam, PhD
Khalil gabriel El hajjam, PhD
R&D process integration engineer, Micron
Подтвержден адрес электронной почты в домене micron.com
Название
Процитировано
Процитировано
Год
Fundamental variability limits of filament-based RRAM
A Grossi, E Nowak, C Zambelli, C Pellissier, S Bernasconi, G Cibrario, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2016
1322016
Light harvesting by planar photonic crystals in solar cells: the case of amorphous silicon
G Gomard, X Meng, E Drouard, K El Hajjam, E Gerelli, R Peretti, A Fave, ...
Journal of Optics 14 (2), 024011, 2012
622012
Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
R Vallat, R Gassilloud, O Salicio, K El Hajjam, G Molas, B Pelissier, ...
Journal of Vacuum Science & Technology A 37 (2), 2019
342019
Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications
G Sassine, C Nail, L Tillie, DA Robayo, A Levisse, C Cagli, KE Hajjam, ...
2018 IEEE International Reliability Physics Symposium (IRPS), P-MY. 2-1-P-MY …, 2018
312018
Study of the energy consumption optimization on RRAM memory array for SCM applications
C Cagli, G Molas, M Harrand, S Bernasconi, C Charpin, K El Hajjam, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
192017
Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
K El Hajjam, N Baboux, F Calmon, A Souifi, O Poncelet, LA Francis, ...
Journal of Vacuum Science & Technology A 32 (1), 2014
162014
Tunnel junction engineering for optimized metallic single-electron transistor
KG El Hajjam, MA Bounouar, N Baboux, S Ecoffey, M Guilmain, E Puyoo, ...
IEEE Transactions on Electron Devices 62 (9), 2998-3003, 2015
142015
Room temperature double gate single electron transistor based standard cell library
MA Bounouar, A Beaumont, K El Hajjam, F Calmon, D Drouin
Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale …, 2012
122012
Integration of Ruthenium-based wordline in a 3-D NAND memory devices
L Breuil, GK El Hajjam, S Ramesh, A Ajaykumar, A Arreghini, L Zhang, ...
2020 IEEE International Memory Workshop (IMW), 1-4, 2020
82020
Study of forming impact on 4Kbit RRAM array performances and reliability
C Nguyen, C Cagli, G Molas, B Sklenard, C Nail, K El Hajjam, JF Nodin, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
62017
Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories
S Ramesh, A Ajaykumar, LÅ Ragnarsson, L Breuil, GK El Hajjam, ...
Micromachines 12 (9), 1084, 2021
22021
IEEE Int. Electron Devices Meet
A Grossi, E Nowak, C Zambelli, C Pellissier, S Bernasconi, G Cibrario, ...
IEEE, San Francisco, CA, 4-7, 2016
22016
Three dimensional resistive random access memory and method enabling such a memory to be obtained
K El Hajjam, G Molas, J Nodin
US Patent 11,393,876, 2022
12022
Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector
A Haider, S Deng, W Devulder, JW Maes, JM Girard, GK El Hajjam, ...
Materials Advances 2 (5), 1635-1643, 2021
12021
Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique
K El Hajjam
INSA de Lyon; Université de Sherbrooke (Québec, Canada), 2015
12015
Three-dimensional resistive random access memory and method making it possible to obtain such a memory
K El Hajjam
US Patent App. 17/312,702, 2022
2022
Van den bosch, G.; et al. Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. Micromachines 2021, 12, 1084
S Ramesh, A Ajaykumar, LÅ Ragnarsson, L Breuil, GK El Hajjam, ...
Flash Memory Devices, 107, 2021
2021
Pulsed CVD of amorphous GeSe for application as OTS selector
A Haider, S Deng, E Schapmans, J Maes, JM Girard, GK El Hajjam, ...
2019
Pulsed CVD/ALD of Amorphous GeSe for Application as OTS Selector
A Haiderő
2019
Integration and Electrical Characterization of Indium-Oxide Nanoparticles in Oxide Resistive Random-Access Memories
A Souifi, E Cossec, K Hamga, PV Guenery, M Troudi, K El Hajjam, ...
CMOS Emerging Technologies, 2016
2016
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