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John Albrecht
John Albrecht
Подтвержден адрес электронной почты в домене egr.msu.edu
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Процитировано
Процитировано
Год
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ...
IEEE Transactions on electron devices 48 (3), 535-542, 2001
5032001
Electron transport characteristics of GaN for high temperature device modeling
JD Albrecht, RP Wang, PP Ruden, M Farahmand, KF Brennan
Journal of Applied Physics 83 (9), 4777-4781, 1998
4011998
High field electron transport properties of bulk ZnO
JD Albrecht, PP Ruden, S Limpijumnong, WRL Lambrecht, KF Brennan
Journal of Applied Physics 86 (12), 6864-6867, 1999
2441999
Ensemble Monte Carlo study of electron transport in wurtzite InN
E Bellotti, BK Doshi, KF Brennan, JD Albrecht, PP Ruden
Journal of Applied Physics 85 (2), 916-923, 1999
2151999
Electron spin injection at a Schottky contact
JD Albrecht, DL Smith
Physical Review B 66 (11), 113303, 2002
1472002
Lattice thermal conductivity in from first principles
MD Santia, N Tandon, JD Albrecht
Applied Physics Letters 107 (4), 041907, 2015
1402015
Spin-polarized electron transport at ferromagnet/semiconductor Schottky contacts
JD Albrecht, DL Smith
Physical Review B 68 (3), 035340, 2003
912003
Effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors
B Jogai, JD Albrecht, E Pan
journal of Applied physics 94 (6), 3984-3989, 2003
772003
AlGaN/GaN heterostructure field-effect transistor model including thermal effects
JD Albrecht, PP Ruden, SC Binari, MG Ancona
IEEE Transactions on Electron Devices 47 (11), 2031-2036, 2000
772000
Near-junction thermal management for wide bandgap devices
A Bar-Cohen, JD Albrecht, JJ Maurer
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-5, 2011
642011
THz electronics projects at DARPA: Transistors, TMICs, and amplifiers
JD Albrecht, MJ Rosker, HB Wallace, TH Chang
2010 IEEE MTT-S International Microwave Symposium, 1118-1121, 2010
562010
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ...
Applied physics letters 113 (1), 011111, 2018
532018
Monte Carlo calculation of electron transport properties of bulk AlN
JD Albrecht, RP Wang, PP Ruden, M Farahmand, KF Brennan
Journal of applied physics 83 (3), 1446-1449, 1998
501998
Molecular beam epitaxial growth of high-quality GaN nanocolumns
JE Van Nostrand, KL Averett, R Cortez, J Boeckl, CE Stutz, NA Sanford, ...
Journal of crystal growth 287 (2), 500-503, 2006
492006
Materials theory based modeling of wide band gap semiconductors: from basic properties to devices
KF Brennan, E Bellotti, M Farahmand, J Haralson II, PP Ruden, ...
Solid-State Electronics 44 (2), 195-204, 2000
482000
Effective properties of multilayered functionally graded multiferroic composites
X Wang, E Pan, JD Albrecht, WJ Feng
Composite Structures 87 (3), 206-214, 2009
462009
Electromechanical coupling in free-standing AlGaN/GaN planar structures
B Jogai, JD Albrecht, E Pan
Journal of applied physics 94 (10), 6566-6573, 2003
422003
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection
D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ...
Applied Physics Letters 112 (8), 081101, 2018
402018
Thermal conductivity of opals and related composites
JD Albrecht, PA Knipp, TL Reinecke
Physical Review B 63 (13), 134303, 2001
302001
Electron-phonon interaction and scattering in Si and Ge: Implications for phonon engineering
N Tandon, JD Albrecht, LR Ram-Mohan
Journal of Applied Physics 118 (4), 045713, 2015
262015
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Статьи 1–20