Leonid Vorobjev
Leonid Vorobjev
Professor, Peter the Great St.Petersburg Polytechnic University (SPbPU)
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Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
D Donetsky, SP Svensson, LE Vorobjev, G Belenky
Applied Physics Letters 95 (21), 212104, 2009
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
D Donetsky, G Belenky, S Svensson, S Suchalkin
Applied Physics Letters 97 (5), 052108, 2010
A dual-color injection laser based on intra-and inter-band carrier transitions in semiconductor quantum wells or quantum dots
A Kastalsky, LE Vorobjev, A Firsov, VL Zerova, E Towe
IEEE journal of quantum electronics 37 (10), 1356-1362, 2001
Toward far-and mid-IR intraband lasers based on hot carrier intervalley/real-space transfer in multiple quantum well systems
VY Aleshkin, AA Andronov, AV Antonov, EV Demidov, AE Dubinov, ...
Smart Optical Inorganic Structures and Devices 4318, 192-203, 2001
Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors
Y Lin, D Wang, D Donetsky, G Kipshidze, L Shterengas, LE Vorobjev, ...
Semiconductor Science and Technology 29 (11), 112002, 2014
A Two-Dimensional hot electron electro-optic effect in GaAs/(Al, Ga) As multiple quantum wells
E Towe, D Sun, LE Vorobjev, SN Danilov, DA Firsov, EA Zibik
Superlattices and microstructures 17 (2), 129-133, 1995
Hole spin-relaxation in quantum wells from saturation of inter-subband absorption
J Kainz, P Schneider, SD Ganichev, U Rössler, W Wegscheider, D Weiss, ...
Physica E: Low-dimensional Systems and Nanostructures 22 (1-3), 418-421, 2004
Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells
VY Aleshkin, DM Gaponova, DG Revin, LE Vorobjev, SN Danilov, ...
10th International Symposium on Nanostructures: Physics and Technology 5023 …, 2003
The effect of Auger recombination on the nonequilibrium carrier recombination rate in the InGaAsSb/AlGaAsSb quantum wells
M Vinnichenko, I Makhov, R Balagula, D Firsov, L Vorobjev, L Shterengas, ...
Superlattices and Microstructures 109, 743-749, 2017
Characterization of silicon carbide epitaxial films by differential reflectance spectroscopy
AV Shturbin, IE Titkov, VY Panevin, LE Vorobjev, RF Witman
Third International Workshop on Nondestructive Testing and Computer …, 2000
Impurity-assisted terahertz luminescence in quantum well nanostructures under interband photoexñitation
IS Makhov, VY Panevin, MY Vinnichenko, AN Sofronov, DA Firsov, ...
St. Petersburg Polytechnical University Journal: Physics and Mathematics 2 …, 2016
Effect of Auger recombination on non-equilibrium charge carrier concentration in InGaAsSb/AlGaAsSb quantum wells
MY Vinnichenko, IS Makhov, AV Selivanov, AM Sorokina, LE Vorobjev, ...
St. Petersburg Polytechnical University Journal: Physics and Mathematics 2 …, 2016
Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb/AlGaAsSb quantum wells.
MY Vinnichenko, IS Makhov, AV Selivanov, AM Sorokina, LE Vorobjev, ...
St. Petersburg State Polytechnical University Journal. Physics and Mathematics, 2016
16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto-and Nanoelectronics
RA Suris, LE Vorobjev, DA Firsov
Journal of Physics: Conference Series 586 (1), 011001, 2015
Terahertz emission and reflection associated with surface plasmon polaritons in n-GaN microstructures
GA Melentyev, VA Shalygin, MD Moldavskaya, VY Panevin, LE Vorobjev, ...
2014 39th International Conference on Infrared, Millimeter, and Terahertz …, 2014
Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells
MY Vinnichenko, LE Vorobjev, DA Firsov, MO Mashko, AN Sofronov, ...
AIP Conference Proceedings 1566 (1), 480-481, 2013
Intersubband emission and carrier dynamics in GaAs/AlGaAs tunnel‐coupled quantum wells after ultrafast optical pumping
S Hanna, W Silz, VY Panevin, VA Shalygin, LE Vorobjev, DA Firsov, ...
AIP Conference Proceedings 893 (1), 479-480, 2007
Stressed GaAsN/GaAs Heterostructures as a Base of THz Radiation Sources
DA Firsov, LE Vorobjev, VA Shalygin, VY Panevin, AN Sofronov, DV Tsoy, ...
AIP Conference Proceedings 893 (1), 509-510, 2007
Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing
LE Vorobjev, DA Firsov, VA Shalygin, VN Tulupenko, YM Shernyakov, ...
Fourth International Conference on Material Science and Material Properties …, 1999
Coherent Intersubband Excitations on a Picosecond Time Scale
S Hanna, A Seilmeier, E Dupont, HC Liu, LE Vorobjev, V Yu, ...
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