Many-electron multiplet effects in the spectra of impurities in heteropolar semiconductors A Fazzio, MJ Caldas, A Zunger
Physical Review B 30 (6), 3430, 1984
351 1984 A universal trend in the binding energies of deep impurities in semiconductors MJ Caldas, A Fazzio, A Zunger
Applied Physics Letters 45 (6), 671-673, 1984
324 1984 Electronic structure of copper, silver, and gold impurities in silicon A Fazzio, MJ Caldas, A Zunger
Physical Review B 32 (2), 934, 1985
102 1985 Anion-antisite-like defects in III-V compounds MJ Caldas, J Dabrowski, A Fazzio, M Scheffler
Physical review letters 65 (16), 2046, 1990
73 1990 Separation of one- and many-electron effects in the excitation spectra of impurities in semiconductors A Fazzio, M Caldas, A Zunger
Physical Review B 29 (10), 5999, 1984
53 1984 Theoretical investigation of the electrical and optical activity of vanadium in GaAs MJ Caldas, SK Figueiredo, A Fazzio
Physical Review B 33 (10), 7102, 1986
40 1986 Zunger Alex 1984 MJ Caldas, A Fazzio
Appl. Phys. Lett 45, 671, 0
20 Point defects in covalent semiconductors: A molecular cluster model A Fazzio, MJ Caldas, JR Leite
International Journal of Quantum Chemistry 16 (S13), 349-361, 1979
19 1979 Theoretical Study of the Si‐A Centre MJ Caldas, JR Leite, A Fazzio
physica status solidi (b) 98 (2), K109-K111, 1980
17 1980 Germanium negative-U center in GaAs TM Schmidt, A Fazzio, MJ Caldas
Physical Review B 53 (3), 1315, 1996
15 1996 Multiple-scattering molecular-cluster model of complex defects in semiconductors: Application to Si: and Si: systems MJ Caldas, JR Leite, A Fazzio
Physical Review B 25 (4), 2603, 1982
14 1982 A molecular cluster study of complex defects in Si: The divacancy and the E center A Fazzio, JR Leite, MJ Caldas
Physica B+ C 116 (1-3), 90-94, 1983
13 1983 Electronic Structure of Interfaces between Thiophene and TiO2 Nanostructures M Alves-Santos, LMM Jorge, MJ Caldas, D Varsano
The Journal of Physical Chemistry C 118 (25), 13539-13544, 2014
11 2014 Defect-molecule parameters for the divacancy in silicon VMS Gomes, LVC Assali, JR Leite, A Fazzio, MJ Caldas
Solid state communications 53 (10), 841-844, 1985
9 1985 Electronic structure calculation of V2+ O2 complexes in silicon VMS Gomes, LVC Assali, JR Leite, MJ Caldas, A Fazzio
Solid state communications 49 (6), 537-539, 1984
9 1984 Correlation effects in native defects in GaAs MJ Caldas, A Fazzio
Materials Science Forum 38, 119-124, 1989
8 1989 Electronic structure of oxygen in silicon MJ Caldas, JR Leite, A Fazzio
Physica B+ C 116 (1-3), 106-111, 1983
6 1983 Anion–Antisite defects in GaAs: As and Sb MJ Caldas, A Fazzio, J Dabrowski, M Scheffler
International Journal of Quantum Chemistry 38 (S24), 563-567, 1990
4 1990 Concavity effects on the optical properties of aromatic hydrocarbons C Cocchi, D Prezzi, A Ruini, MJ Caldas, A Fasolino, E Molinari
The Journal of Physical Chemistry C 117 (24), 12909-12915, 2013
3 2013 Metastable transition of EL2 in GaAs: The electron-phonon-coupling channel MJ Caldas, E Molinari
Solid state communications 89 (6), 493-496, 1994
2 1994