Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application Z Shen, C Zhao, Y Qi, W Xu, Y Liu, IZ Mitrovic, L Yang, C Zhao
Nanomaterials 10 (8), 1437, 2020
210 2020 Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process LJ Phillips, AM Rashed, RE Treharne, J Kay, P Yates, IZ Mitrovic, ...
Data in brief 5, 926-928, 2015
95 2015 Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks LJ Phillips, AM Rashed, RE Treharne, J Kay, P Yates, IZ Mitrovic, ...
Solar Energy Materials and Solar Cells 147, 327-333, 2016
85 2016 Facile preparation of Co3O4 nanoparticles incorporating with highly conductive MXene nanosheets as high-performance anodes for lithium-ion batteries Y Zhao, C Liu, R Yi, Z Li, Y Chen, Y Li, I Mitrovic, S Taylor, P Chalker, ...
Electrochimica Acta 345, 136203, 2020
70 2020 Bio‐Inspired Photoelectric Artificial Synapse based on Two‐Dimensional Ti3 C2 Tx MXenes Floating Gate T Zhao, C Zhao, W Xu, Y Liu, H Gao, IZ Mitrovic, EG Lim, L Yang, CZ Zhao
Advanced Functional Materials 31 (45), 2106000, 2021
69 2021 Review and perspective of high-k dielectrics on silicon S Hall, O Buiu, IZ Mitrovic, Y Lu, WM Davey
Journal of Telecommunications and Information Technology, 33-43, 2007
61 2007 Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature IZ Mitrovic, M Althobaiti, AD Weerakkody, VR Dhanak, WM Linhart, ...
Journal of Applied Physics 115 (11), 2014
54 2014 Review of SiGe HBTs on SOI IZ Mitrovic, O Buiu, S Hall, DM Bagnall, P Ashburn
Solid-state electronics 49 (9), 1556-1567, 2005
54 2005 Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures AD Weerakkody, N Sedghi, IZ Mitrovic, H Van Zalinge, IN Noureddine, ...
Microelectronic Engineering 147, 298-301, 2015
51 2015 All-in-one metal-oxide heterojunction artificial synapses for visual sensory and neuromorphic computing systems Q Liu, L Yin, C Zhao, Z Wu, J Wang, X Yu, Z Wang, W Wei, Y Liu, ...
Nano Energy 97, 107171, 2022
50 2022 Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride M Birkett, CN Savory, AN Fioretti, P Thompson, CA Muryn, ...
Physical Review B 95 (11), 115201, 2017
47 2017 Memristive non-volatile memory based on graphene materials Z Shen, C Zhao, Y Qi, IZ Mitrovic, L Yang, J Wen, Y Huang, P Li, C Zhao
Micromachines 11 (4), 341, 2020
44 2020 Effect of Annealing Temperature for Ni/AlOx /Pt RRAM Devices Fabricated with Solution-Based Dielectric Z Shen, Y Qi, IZ Mitrovic, C Zhao, S Hall, L Yang, T Luo, Y Huang, C Zhao
Micromachines 10 (7), 446, 2019
42 2019 Spectroellipsometric assessment of HfO2 thin films O Buiu, Y Lu, IZ Mitrovic, S Hall, P Chalker, RJ Potter
Thin Solid Films 515 (2), 623-626, 2006
42 2006 Compositional tuning of atomic layer deposited MgZnO for thin film transistors JS Wrench, IF Brunell, PR Chalker, JD Jin, A Shaw, IZ Mitrovic, S Hall
Applied Physics Letters 105 (20), 2014
40 2014 The influence of Nb2O5 on BaTiO3 ceramics dielectric properties IM V.V. Mitic
Journal of the European Ceramic Society 21, 2693–2696, 2001
38 2001 Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters M Cui, Q Bu, Y Cai, R Sun, W Liu, H Wen, S Lam, YC Liang, IZ Mitrovic, ...
Japanese Journal of Applied Physics 58 (5), 056505, 2019
36 2019 Functionalized-MXene-nanosheet-doped tin oxide enhances the electrical properties in perovskite solar cells L Yin, C Liu, C Ding, C Zhao, IZ Mitrovic, EG Lim, H Wang, Y Sun, Y Han, ...
Cell Reports Physical Science 3 (6), 2022
32 2022 Gd silicate: a high-k dielectric compatible with high temperature annealing HDB Gottlob, A Stefani, M Schmidt, MC Lemme, H Kurz, IZ Mitrovic, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
31 2009 Electrical and structural properties of hafnium silicate thin films IZ Mitrovic, O Buiu, S Hall, C Bungey, T Wagner, W Davey, Y Lu
Microelectronics Reliability 47 (4-5), 645-648, 2007
31 2007