| Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics S Miyazaki Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 408 | 2001 |
| Structure and electronic states of ultrathin SiO2 thermally grown on Si (100) and Si (111) surfaces S Miyazaki, H Nishimura, M Fukuda, L Ley, J Ristein Applied surface science 113, 585-589, 1997 | 232 | 1997 |
| Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition S Miyazaki, Y Hamamoto, E Yoshida, M Ikeda, M Hirose Thin Solid Films 369 (1-2), 55-59, 2000 | 190 | 2000 |
| Nanometer‐scale field‐induced oxidation of Si (111): H by a conducting‐probe scanning force microscope: Doping dependence and kinetics T Teuschler, K Mahr, S Miyazaki, M Hundhausen, L Ley Applied Physics Letters 67 (21), 3144-3146, 1995 | 173 | 1995 |
| Resonant tunneling through amorphous silicon–silicon nitride double-barrier structures S Miyazaki, Y Ihara, M Hirose Physical review letters 59 (1), 125, 1987 | 168 | 1987 |
| Characterization of high-k gate dielectric/silicon interfaces S Miyazaki Applied surface science 190 (1-4), 66-74, 2002 | 162 | 2002 |
| Resonant tunneling through a self-assembled Si quantum dot M Fukuda, K Nakagawa, S Miyazaki, M Hirose Applied physics letters 70 (17), 2291-2293, 1997 | 159 | 1997 |
| Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current M Koh, W Mizubayashi, K Iwamoto, H Murakami, T Ono, M Tsuno, ... IEEE Transactions on Electron Devices 48 (2), 259-264, 2001 | 133 | 2001 |
| Luminescence and transport in a-Si: H/a-Si1− xNx: H quantum well structures M Hirose, S Miyazaki Journal of Non-Crystalline Solids 66 (1-2), 327-338, 1984 | 123 | 1984 |
| Characterization of plasma-deposited microcrystalline silicon Y Mishima, S Miyazaki, M Hirose, Y Osaka Philosophical Magazine B 46 (1), 1-12, 1982 | 123 | 1982 |
| Analytic model of direct tunnel current through ultrathin gate oxides K Khairurrijal, W Mizubayashi, S Miyazaki, M Hirose Journal of Applied Physics 87 (6), 3000-3005, 2000 | 108 | 2000 |
| The role of fluorine termination in the chemical stability of HF-treated Si surfaces T Sunada, T Yasaka, M Takakura, T Sugiyama, S Miyazaki, M Hirose Japanese journal of applied physics 29 (12A), L2408, 1990 | 108 | 1990 |
| Memory operation of silicon quantum-dot floating-gate metal-oxide-semiconductor field-effect transistors A Kohno, H Murakami, M Ikeda, S Miyazaki, M Hirose Japanese Journal of Applied Physics 40 (7B), L721, 2001 | 106 | 2001 |
| Digital chemical vapor deposition and etching technologies for semiconductor processing Y Horiike, T Tanaka, M Nakano, S Iseda, H Sakaue, A Nagata, H Shindo, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (3 …, 1990 | 95 | 1990 |
| Photoluminescence from anodized and thermally oxidized porous germanium S Miyazaki, K Sakamoto, K Shiba, M Hirose Thin Solid Films 255 (1-2), 99-102, 1995 | 88 | 1995 |
| Physical model of BTI, TDDB and SILC in HfO/sub 2/-based high-k gate dielectrics K Torii, H Kitajima, T Arikado, K Shiraishi, S Miyazaki, K Yamabe, M Boero, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 84 | 2004 |
| Chemical stability of HF-treated Si (111) surfaces T Yasaka, K Kanda, K Sawara, SMS Miyazaki, MHM Hirose Japanese journal of applied physics 30 (12S), 3567, 1991 | 78 | 1991 |
| Native oxidation growth on Ge (111) and (100) surfaces SK Sahari, H Murakami, T Fujioka, T Bando, A Ohta, K Makihara, ... Japanese Journal of Applied Physics 50 (4S), 04DA12, 2011 | 74 | 2011 |
| Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- CMOSFETs M Kadoshima, T Matsuki, S Miyazaki, K Shiraishi, T Chikyo, K Yamada, ... IEEE Electron Device Letters 30 (5), 466-468, 2009 | 74 | 2009 |
| Praseodymium silicate formed by postdeposition high-temperature annealing A Sakai, S Sakashita, M Sakashita, Y Yasuda, S Zaima, S Miyazaki Applied physics letters 85 (22), 5322-5324, 2004 | 72 | 2004 |
