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Fabio Carta
Fabio Carta
IBM - Research Staff Member
Подтвержден адрес электронной почты в домене us.ibm.com
Название
Процитировано
Процитировано
Год
Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures
H Hlaing, CH Kim, F Carta, CY Nam, RA Barton, N Petrone, J Hone, ...
Nano letters 15 (1), 69-74, 2015
1152015
3D cross-point phase-change memory for storage-class memory
HY Cheng, F Carta, WC Chien, HL Lung, MJ BrightSky
Journal of Physics D: Applied Physics 52 (47), 473002, 2019
832019
ALD-based confined PCM with a metallic liner toward unlimited endurance
W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016
832016
A flexible and fast PyTorch toolkit for simulating training and inference on analog crossbar arrays
MJ Rasch, D Moreda, T Gokmen, M Le Gallo, F Carta, C Goldberg, ...
2021 IEEE 3rd international conference on artificial intelligence circuits …, 2021
762021
Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning
W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ...
2019 Symposium on VLSI Technology, T66-T67, 2019
552019
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017
542017
Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory
HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ...
2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018
492018
A study on OTS-PCM pillar cell for 3-D stackable memory
WC Chien, CW Yeh, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ...
IEEE Transactions on Electron Devices 65 (11), 5172-5179, 2018
362018
Templating and charge injection from copper electrodes into solution-processed organic field-effect transistors
CH Kim, H Hlaing, F Carta, Y Bonnassieux, G Horowitz, I Kymissis
ACS applied materials & interfaces 5 (9), 3716-3721, 2013
342013
Comprehensive scaling study on 3D cross-point PCM toward 1Znm node for SCM applications
WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ...
2019 Symposium on VLSI Technology, T60-T61, 2019
232019
High endurance self-heating OTS-PCM pillar cell for 3D stackable memory
CW Yeh, WC Chien, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ...
2018 IEEE Symposium on VLSI Technology, 205-206, 2018
182018
Si incorporation into AsSeGe chalcogenides for high thermal stability, high endurance and extremely low Vth drift 3D stackable cross-point memory
HY Cheng, IT Kuo, WC Chien, CW Yeh, YC Chou, N Gong, L Gignac, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
172020
A no-verification multi-level-cell (MLC) operation in cross-point OTS-PCM
N Gong, W Chien, Y Chou, C Yeh, N Li, H Cheng, C Cheng, I Kuo, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
162020
Sequential lateral solidification of silicon thin films on cu BEOL-integrated wafers for monolithic 3-D integration
F Carta, SM Gates, AB Limanov, JS Im, DC Edelstein, I Kymissis
IEEE Transactions on Electron Devices 62 (11), 3887-3891, 2015
142015
Bimorph actuator with monolithically integrated CMOS OFET control
F Carta, YJ Hsu, J Sarik, I Kymissis
Organic Electronics 14 (1), 286-290, 2013
142013
Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
N Gong, MJ Rasch, SC Seo, A Gasasira, P Solomon, V Bragaglia, ...
2022 International Electron Devices Meeting (IEDM), 33.7. 1-33.7. 4, 2022
92022
Integration of confined phase change memory with threshold switching material
RL Bruce, F Carta, W Kim, CH Lam
US Patent 10,892,413, 2021
82021
IEEE 3rd Int. Conf. on Artificial Intelligence Circuits and Systems (AICAS)
MJ Rasch, D Moreda, T Gokmen, M Le Gallo, F Carta, C Goldberg, ...
IEEE, 2021
72021
Using the IBM analog in-memory hardware acceleration kit for neural network training and inference
M Le Gallo, C Lammie, J Büchel, F Carta, O Fagbohungbe, C Mackin, ...
APL Machine Learning 1 (4), 2023
62023
Barrier layer for selector devices and memory devices using same
HY Cheng, HL Lung, RL Bruce, F Carta
US Patent App. 16/355,292, 2020
62020
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