Follow
Jibin Zou
Jibin Zou
Ph.D. graduate of Peking University
Verified email at pku.edu.cn
Title
Cited by
Cited by
Year
Impacts of random telegraph noise (RTN) on digital circuits
M Luo, R Wang, S Guo, J Wang, J Zou, R Huang
IEEE Transactions on Electron Devices 62 (6), 1725-1732, 2014
612014
Predictive 3-D modeling of parasitic gate capacitance in gate-all-around cylindrical silicon nanowire MOSFETs
J Zou, Q Xu, J Luo, R Wang, R Huang, Y Wang
IEEE transactions on electron devices 58 (10), 3379-3387, 2011
592011
Investigation on variability in metal-gate Si nanowire MOSFETs: Analysis of variation sources and experimental characterization
R Wang, J Zhuge, R Huang, T Yu, J Zou, DW Kim, D Park, Y Wang
IEEE transactions on electron devices 58 (8), 2317-2325, 2011
552011
New insights into AC RTN in scaled high-к/metal-gate MOSFETs under digital circuit operations
J Zou, R Wang, N Gong, R Huang, X Xu, J Ou, C Liu, J Wang, J Liu, J Wu, ...
2012 Symposium on VLSI Technology (VLSIT), 139-140, 2012
382012
New observations on complex RTN in scaled high-κ/metal-gate MOSFETs—The role of defect coupling under DC/AC condition
P Ren, P Hao, C Liu, R Wang, X Jiang, Y Qiu, R Huang, S Guo, M Luo, ...
2013 IEEE International Electron Devices Meeting, 31.4. 1-31.4. 4, 2013
302013
A unified approach for trap-aware device/circuit co-design in nanoscale CMOS technology
R Wang, M Luo, S Guo, R Huang, C Liu, J Zou, J Wang, J Wu, N Xu, ...
2013 IEEE International Electron Devices Meeting, 33.5. 1-33.5. 4, 2013
282013
Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology
J Zhuge, R Wang, R Huang, J Zou, X Huang, DW Kim, D Park, X Zhang, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
262009
Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits
J Zou, R Wang, M Luo, R Huang, N Xu, P Ren, C Liu, W Xiong, J Wang, ...
2013 Symposium on VLSI Technology, T186-T187, 2013
252013
Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling
R Huang, R Wang, J Zhuge, C Liu, T Yu, L Zhang, X Huang, Y Ai, J Zou, ...
2011 IEEE Custom Integrated Circuits Conference (CICC), 1-8, 2011
242011
Towards the systematic study of aging induced dynamic variability in nano-MOSFETs: Adding the missing cycle-to-cycle variation effects into device-to-device variation
C Liu, J Zou, R Wang, R Huang, X Xu, J Liu, H Wu, Y Wang
2011 International Electron Devices Meeting, 25.4. 1-25.4. 4, 2011
222011
New observations on AC NBTI induced dynamic variability in scaled high-κ/metal-gate MOSFETs: characterization, origin of frequency dependence, and impacts on circuits
C Liu, P Ren, R Wang, R Huang, J Ou, Q Huang, J Zou, J Wang, J Wu, ...
2012 International Electron Devices Meeting, 19.5. 1-19.5. 4, 2012
182012
Experimental demonstration of current mirrors based on silicon nanowire transistors for inversion and subthreshold operations
R Huang, J Zou, R Wang, C Fan, Y Ai, J Zhuge, Y Wang
IEEE transactions on electron devices 58 (10), 3639-3642, 2011
162011
Complex random telegraph noise (RTN): What do we understand?
R Wang, S Guo, Z Zhang, J Zou, D Mao, R Huang
2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018
152018
Method for testing density and location of gate dielectric layer trap of semiconductor device
R Huang, J Zou, C Liu, R Wang, J Fan, Y Wang
US Patent 9,018,968, 2015
132015
New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits
J Zou, R Wang, S Guo, M Luo, Z Yu, X Jiang, P Ren, J Wang, J Liu, J Wu, ...
2014 IEEE International Electron Devices Meeting, 34.5. 1-34.5. 4, 2014
132014
New understanding of the statistics of random telegraph noise in Si nanowire transistors-the role of quantum confinement and non-stationary effects
C Liu, R Wang, J Zou, R Huang, C Fan, L Zhang, J Fan, Y Ai, Y Wang
2011 International Electron Devices Meeting, 23.6. 1-23.6. 4, 2011
132011
Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices
Z Zhang, S Guo, X Jiang, R Wang, R Huang, J Zou
2016 IEEE International Nanoelectronics Conference (INEC), 1-2, 2016
112016
Characterization of Random Telegraph Noise in Scaled High-κ/Metal-Gate MOSFETs with SiO2/HfO2 Gate Dielectrics
M Li, R Wang, J Zou, R Huang
ECS Transactions 52 (1), 941, 2013
112013
Frequency-modulated charge pumping with extremely high gate leakage
JT Ryan, J Zou, R Southwick, JP Campbell, KP Cheung, AS Oates, ...
IEEE Transactions on Electron Devices 62 (3), 769-775, 2015
82015
High voltage-resistant lateral double-diffused transistor based on nanowire device
R Huang, J Zou, R Wang, G Yang, Y Ai, J Fan
US Patent 8,564,031, 2013
82013
The system can't perform the operation now. Try again later.
Articles 1–20